IXYS DSEE 55-24N1F Datasheet

DSEE55-24N1F

V

V

A

j

●

●

●

●

HiPerFRED

High Performance Fast Recovery Diode

I
t

==1200

60

= 40 ns

Low Loss and Soft Recovery
Phase leg

Part number

DSEE55-24N1F

Features / Advantages:

● Planar passivated chips

● Very low leakage current

● Very short recovery time

● Improved thermal behaviour

● Very low Irm-values

● Very soft recovery behaviour

● Avalanche voltage rated for reliable operation

● Soft reverse recovery for low EMI/RFI

● Low Irm reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating switch

Symbol Definition

V

RRM

I

R

V

F

I A

FAV

V

F0

r

F

R 0.60 K/W

thJC

T

VJ

P

tot

I

FSM

I

RM

rr

C

J

max. repetitive re verse voltage
reverse current

forward voltage

average forward current
threshold voltage

slope resistance
thermal resistance junction to case

virtual junction temperature
total power dissipation

max. forward surge current
max. reverse recovery current

reverse recovery time

unction capacitance

for power loss calculation only

1 3 5

Applications:

● Antiparallel diode for high frequency
switching devices

● Antisaturation diode

● Snubber diode

● Free wheeling diode

● Rectifiers in switch mode power

supplies (SMPS)

● Uninterruptible power supplies (UPS)

Conditions

=

V°C=

1200

V

R

V

=

R

I

F

V1200

=A

60

IF=A120

I

=A

60

F

=A120

I

F

rectangular 0.5

t = 10 ms

IF=A;60

d =

(50 Hz), sine

VR=V600

-diF=A/µs600/dtt

V = V; T

R

f = 1 MHz = °C25

Package:

● Housing:

rDCB isolated backside
rIsolation Voltage 3000 V
rEpoxy meets UL 94V-0
rRoHS compliant

T

VJ

VJ

T

VJ

T

VJ

VJ

T

C

C

T

VJ

TVJ=°C

T=100°C

VJ

°C=25

25

°C=mA4

150

25

=°C

=°C

150

= 110 °C

25

°C=

= 45°C

25

TVJ=°C25

T=100°C

VJ

VJ

i4-Pac

R a t i n g s

min.

Backside: isolated

typ. max.

1T

2.45

2.90

2.00

60

6.8

175 °C-55

250 WT

800

35 A

75

220

48600 pF

Unit

mA

mΩ

ns

ns

V1200

V

V

V1.56T

V

V0.97TVJ= 175 °C

A

A60

IXYS reserves the right to change limits, conditions and dimensions.

2011 IXYS all rights reserved

©

Data according to IEC 60747and per diode unless otherwise specified

20110215a

DSEE55-24N1F

g

Ratings

Symbol Definition

I

R

T

RMS

stg

thCH

RMS current
thermal resistance case to heatsink

storage temperature

per terminal

Weight g9

F

C

V

d

d

ISOL

Spp/App

Spb/Apb

mounting force w i th clip
isolation voltage

t = 1 second

t = 1 minute

creepage | striking distance on surface | through air terminal to terminal
creepage | striking distance on surface | through air terminal to backside

Product Markin

typ. max.min.Conditions

-55

20

5.5

5.1

70

Unit

A

K/W0.20

°C150

N120

V3600

V3000

mm

mm

Logo
Part No.

UL listed

Date Code

IXYS

Ordering Delivering Mode Base Qty Code Key

Standard

Part Name

DSEE55-24N1F 488739Tube 24

Marking on Product

DSEE55-24N1F

IXYS reserves the right to change limits, conditions and dimensions.

2011 IXYS all rights reserved

©

Data according to IEC 60747and per diode unless otherwise specified

20110215a

DSEE55-24N1F

A

For

<

0

r

Outlines

i4-Pac

E

Q

R

L1

LD

153

W

A2

D3

c

A1

2x e

D1

E1

3x b

b4

D2

2x b2

Millimeter Inches

Dim.

minmaxminmax

A 4.83 5.21 0.190 0.205
A1 2.59 3.00 0.102 0.118
A2 1.17 2.16 0.046 0.085

b 1.14 1.40 0.045 0.055
b2 1.47 1.73 0.058 0.068
b4 2.54 2.79 0.100 0.110

c 0.51 0.74 0.020 0.029

D 20.80 21.34 0.819 0.840
D1 14.99 15.75 0.590 0.620
D2 1.65 2.03 0.065 0.080
D3 20.30 20.70 0.799 0.815

E 19.56 20.29 0.770 0.799
E1 16.76 17.53 0.660 0.690

e 7.62 BSC 0.300 BSC

L 19.81 21.34 0.780 0.840
L1 2.11 2.59 0.083 0.102

Q 5.33 6.20 0.210 0.244

R

W

Die ko nvexe
der Ku nststo ffo berfl äch e der Ba utei lunte rsei te

The convexbow ofsubstrate is typ.< 0.05 mmover plastic
surface level ofdevice bottomside

4.57 0.100 0.180

2.54

0.10

-

mdesSubstrates ist typ.

-

0.004

.05 mm übe

IXYS reserves the right to change limits, conditions and dimensions.

2011 IXYS all rights reserved

©

Data according to IEC 60747and per diode unless otherwise specified

20110215a

DSEE55-24N1F

100

80

TVJ= 150°C

60

I

F

100°C

25°C

40

[A]

20

0

0123

[V]

V

F

Fig. 1 Forward current I

F

2.0

1.5

K

1.0

f

I

RM

0.5

Q

r

0.0
04080120160

TVJ[°C]

Fig. 4 Dynamic parameters

versus T

Q

10

r,IRM

0

VJ

vs. V

15.0

12.5

TVJ=125°C

= 800 V

V

R

120

TVJ=125°C

V

= 800 V

R

IF= 120 A

Q

[nC]

r

10.0

7.5

5.0

IF=120 A

60 A
30 A

I

RM

[A]

80

40

60 A
30 A

2.5

0.0
0001001

-di

/dt [A/µs]

F

F

Fig. 2 Typ. reverse recovery charge

Q

versus -diF/dt

r

300

TVJ= 125°C

V

= 800 V

280

260

t

rr

R

IF= 120 A

60 A

[ns]

240

30 A

0

200 600 10000 400 800

/dt [A/µs]

-di

F

Fig. 3 Typ. peak reverse current

versus -diF/dt

I

RM

60

TVJ=125°C

= 60 A

I

F

40

V

FR

[V]

20

1.2

0.8

t

fr

[µs]

0.4

t

fr

220

V

FR

200

200 600 10000 400 800

/dt [A/µs]

-di

F

Fig. 5 Typ. recovery time

versus -diF/dt

t

rr

0

0 200 400 600 800 1000

-di

/dt [A/µs]

F

Fig. 6 Typ. peak forward voltageV

and typ. forward recovery time

versus diF/dt

t

fr

0.0

FR

Z

thJC

-1

10

[K/W]

-2

10

10

-3

10

-2

10

t [s]

Fig. 7 Transient thermal resistance junction to case

IXYS reserves the right to change limits, conditions and dimensions.

2011 IXYS all rights reserved

©

Constants for Z

(K/W) ti(s)

iR

thi

calculation:

thJC

1 0.212 0.0055

2 0.248 0.0092

3 0.063 0.0007

4 0.077 0.0391

-1

0

10

Data according to IEC 60747and per diode unless otherwise specified

10

1

20110215a