IXYS DSEC60-03AR, DSEC60-03A Datasheet
DSEC 60-03A
DSEC 60-03AR
HiPerFREDTM Epitaxial Diode
with common cathode and soft recovery
V
RSM
V V
300 300 DSEC 60-03A
300 300 DSEC 60-03AR
Symbol Conditions Maximum Ratings
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
Md * mounting torque 0.8...1.2 Nm
F
C
V
RRM
Type
A C A
70 A
TC = 145°C; rectangular, d = 0.5 30 A
TVJ = 45°C; tp = 10 ms (50 Hz), sine 300 A
TVJ = 25°C; non-repetitive 1.2 mJ
IAS = 3 A; L = 180 µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.3 A
-55...+175 °C
175 °C
-55...+150 °C
TC = 25°C 165 W
mounting force with clip 10...50 N
I
V
t
FAV
rr
= 2x 30 A
= 300 V
RRM
= 30 ns
TO-247 AD ISOPLUS 247
Version A Version AR
A
C
A
A = Anode, C = Cathode
C (TAB)
A
C
A
* Patent pending
Isolated
back surface *
Features
●
International standard package
●
Planar passivated chips
●
Very short recovery time
●
Extremely low switching losses
●
Low IRM-values
●
Soft recovery behaviour
●
Epoxy meets UL 94V-0
●
Version AR isolated and
UL registered E153432
Applications
TM
V
** 50/60 Hz, RMS, t = 1 minute, leads-to-tab 2500 V~
ISOL
Weight typical 6 g
* Verson A only; ** Version AR only
Symbol Conditions Characteristic Values
typ. max.
IR① TVJ = 25°C VR= V
TVJ = 150°C VR= V
RRM
RRM
250 mA
1mA
VF② IF = 30 A; TVJ= 150°C 0.91 V
TVJ= 25°C 1.25 V
R
thJC
R
thCH
t
rr
IF = 1 A; -di/dt = 200 A/ms; 30 ns
0.25 K/W
0.9 K/W
VR = 30 V; TVJ = 25°C
I
RM
VR = 100 V; IF = 50 A; -diF/dt = 100 A/ms7A
TVJ = 100°C
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode in converters
and motor control circuits
●
Rectifiers in switch mode power
supplies (SMPS)
●
Inductive heating
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
Avalanche voltage rated for reliable
operation
●
Soft reverse recovery for low
EMI/RFI
●
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
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1 - 2
DSEC 60-03A
DSEC 60-03AR
60
A
I
F
40
TVJ=150°C
T
=100°C
VJ
T
= 25°C
VJ
20
0
0.0 0.5 1.0 1.5
V
V
F
Fig. 1 Forward current IF versus V
1.4
1.2
K
f
1.0
0.8
I
RM
Q
r
800
T
= 100°C
VJ
nC
V
= 150V
R
600
Q
r
400
I
= 60A
F
I
F = 30A
I
F = 15A
30
T
= 100°C
VJ
A
V
= 150V
R
25
I
RM
20
I
= 60A
F
I
F = 30A
I
15
F = 15A
10
200
5
0
100 1000
A/ms
-diF/dt
F
Fig. 2 Reverse recovery charge Q
versus -diF/dt
90
ns
80
t
rr
T
VJ
V
R
= 100°C
r
= 150V
70
= 60A
I
F
I
60
F = 30A
I
F = 15A
0
200 600 10000 400 800
-di
Fig. 3 Peak reverse current I
versus -diF/dt
14
V
V
t
FR
fr
12
10
T
I
V
FR
A/ms
/dt
F
= 100°C
VJ
= 30A
F
RM
1.2
µs
1.0
t
fr
0.8
0.6
0.4
0.6
0.4
0 40 80 120 160
T
VJ
Fig. 4 Dynamic parameters Qr, I
versus T
VJ
°C
RM
50
40
200 600 10000 400 800
/dt
-di
F
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t
1
K/W
0.1
Z
thJC
0.01
0.001
0.0001
0.00001 0.0001 0.001 0.01 0.1 1
DSEP30-03A/DSEC 60-03A
t
A/ms
s
8
0 200 400 600 800 1000
A/ms
diF/dt
versus diF/dt
Constants for Z
iR
calculation:
thJC
(K/W) ti (s)
thi
1 0.465 0.005
2 0.179 0.0003
3 0.256 0.04
0.2
0.0
fr
Fig. 7 Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2000 IXYS All rights reserved
025
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