IXYS DSEA59-06BC, DSEC59-06BC Datasheet
ADVANCE TECHNICAL INFORMATION
DSEA 59-06BC
DSEC 59-06BC
HiPerFREDTM Epitaxial Diode
ISOPLUS220
Electrically Isolated Back Surface
V
RSM
V V
600 600 DSEA 59-06BC
Symbol Conditions Maximum Ratings
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
T
L
P
tot
V
ISOL
F
C
Weight typical 2 g
Symbol Conditions Characteristic Values
Q T
I
R
V
R I
F
R
thJC
R
thCH
t
rr
I
RM
Notes: Data given for TVJ = 25OC and per diode unless otherwise specified
V
RRM
TC = 90°C; rectangular, d = 0.5 30 A
TVJ = 45°C; tp = 10 ms (50 Hz), sine 200 A
TVJ = 25°C; non-repetitive 0.2 mJ
IAS = 1.3 A; L = 180 µH
V
= 1.5·V
A
1.6 mm (0.063 in) from case for 10 s 260 °C
TC = 25°C 165 W
50/60 Hz RMS; I
Mounting force 11...65 / 2.5...15 N / lb
VJ
TVJ = 150°C VR= V
= 30 A; TVJ= 125°C 1.75 V
F
IF = 1 A; -di/dt = 200 A/µs; 30 ns
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 50 A; -diF/dt = 100 A/µs 4 A
TVJ = 100°C
Q Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
R Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 %
TM
DSEA
Type
DSEC
DSEC 59-06BC
60 A
typical; f = 10 kHz; repetitive 0.1 A
R
-55...+175 °C
175 °C
-55...+150 °C
≤ 1 mA 2500 V~
ISOL
typ. max.
= 25°C VR= V
RRM
RRM
200 µA
2mA
TVJ= 25°C 2.5 V
0.9 K/W
0.6 K/W
31 2
31 2
I
FAV
V
t
rr
ISOPLUS220
* Patent pending
= 2x21 A
= 600 V
RRM
= 35 ns
1
2
TM
3
Isolated back surface *
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low cathode to tab capacitance (<15pF)
l
Planar passivated chips
l
Very short recovery time
l
Extremely low switching losses
l
Low IRM-values
l
Soft recovery behaviour
l
Epoxy meets UL 94V-0
Applications
l
Antiparallel diode for high frequency
switching devices
l
Antisaturation diode
l
Snubber diode
l
Free wheeling diode in converters
and motor control circuits
l
Rectifiers in switch mode power
supplies (SMPS)
l
Inductive heating
l
Uninterruptible power supplies (UPS)
l
Ultrasonic cleaners and welders
Advantages
l
Avalanche voltage rated for reliable
operation
l
Soft reverse recovery for low EMI/RFI
l
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
98817 (04/01)
ISOPLUS220 OUTLINE
DSEA 59-06BC
DSEC 59-06BC
Note: All terminals are solder plated.
DSEA: 1 - Cathode
DSEC: 1 -Anode
2 - Anode
3 - Cathode
2 - Cathode
3 - Anode
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