IXYS DSEC30-12A Datasheet

DSEC 30-12A

HiPerFREDTM Epitaxial Diode

with common cathode and soft recovery

V

RSM

V V

1200 1200 DSEC 30-12A

Symbol Conditions Maximum Ratings
I

FRMS

I

FAVM

I

FSM

E

AS

I

AR

T

VJ

T

VJM

T

stg

P

tot

M

d

Weight typical 6 g

Symbol Conditions Characteristic Values

IR① TVJ = 25°C VR= V

VF② IF = 15 A; TVJ= 150°C 1.78 V

R

thJC

R

thCH

t

rr

I

RM

Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %

V

RRM

Type

A C A

50 A

TC = 125°C; rectangular, d = 0.5 15 A

TVJ = 45°C; tp = 10 ms (50 Hz), sine 90 A
TVJ = 25°C; non-repetitive 8.7 mJ

IAS = 9 A; L = 180 µH
VA = 1.25·VR typ.; f = 10 kHz; repetitive 0.9 A

-55...+175 °C
175 °C

-55...+150 °C

TC = 25°C 95 W
mounting torque 0.8...1.2 Nm

typ. max.

100 mA

0.5 mA

TVJ = 150°C VR= V

RRM
RRM

TVJ= 25°C 2.74 V

1.6 K/W

0.25 K/W

IF = 1 A; -di/dt = 100 A/ms; 40 ns
VR = 30 V; TVJ = 25°C

VR = 100 V; IF = 25 A; -diF/dt = 100 A/ms4.5 A
TVJ = 100°C

② Pulse Width = 300 ms, Duty Cycle < 2.0 %

I

FAV

V
t

rr

= 2x 15 A
= 1200 V

RRM

= 40 ns

TO-247 AD

A

C

A

A = Anode, C = Cathode, TAB = Cathode

C (TAB)

Features

●

International standard package

●

Planar passivated chips

●

Very short recovery time

●

Extremely low switching losses

●

Low IRM-values

●

Soft recovery behaviour

●

Epoxy meets UL 94V-0

Applications

●

Antiparallel diode for high frequency
switching devices

●

Antisaturation diode

●

Snubber diode

●

Free wheeling diode in converters
and motor control circuits

●

Rectifiers in switch mode power
supplies (SMPS)

●

Inductive heating

●

Uninterruptible power supplies (UPS)

●

Ultrasonic cleaners and welders

Advantages

●

Avalanche voltage rated for reliable
operation

●

Soft reverse recovery for low
EMI/RFI

●

Low IRM reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating
switch

Dimensions see outlines.pdf

Data according to IEC 60747 and per diode unless otherwise specified

IXYS reserves the right to change limits, test conditions and dimensions.

© 2000 IXYS All rights reserved

008

1 - 2

DSEC 30-12A

40

A

35
30

I

F

25
20

TVJ=150°C
TVJ=100°C
TVJ= 25°C

15
10

5
0

01234

V

F

Fig. 1 Forward current IF versus V

2.0

1.5

K

f

1.0

0.5

I

RM

Q

r

Q

3.0

m

C

2.5

r

2.0

1.5

TVJ= 100°C
VR = 600V

IF= 30A
IF= 15A
IF= 7.5A

I

RM

50

A

40

30

20

TVJ= 100°C
VR = 600V

IF= 30A
IF= 15A
IF= 7.5A

1.0

0.5

0.0

V

100 1000

A/ms

-diF/dt

F

Fig. 2 Reverse recovery charge Q

versus -diF/dt

180

ns

160

t

rr

TVJ= 100°C
VR = 600V

r

IF= 30A

140

IF= 15A
IF= 7.5A

10

0

200 600 10000 400 800

-di

Fig. 3 Peak reverse current I

versus -diF/dt

120

V

V

FR

80

t

fr

40

TVJ= 100°C
IF = 15A

V

F

/dt

FR

A/ms

RM

1.2

µs

t

fr

0.8

0.4

120

0.0
0 40 80 120 160

T

VJ

Fig. 4 Dynamic parameters Qr, I

versus T

VJ

°C

RM

100

200 600 10000 400 800

-di

A/ms

/dt

F

Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t

10

K/W

1

Z

thJC

0.1

0.01

0.001

0.00001 0.0001 0.001 0.01 0.1 1

s

t

Fig. 7 Transient thermal resistance junction to case

NOTE: Fig. 2 to Fig. 6 shows typical values

© 2000 IXYS All rights reserved

DSEC 30-12A

0

0 200 400 600 800 1000

A/ms

diF/dt

versus diF/dt

Constants for Z

iR

calculation:

thJC

(K/W) ti (s)

thi

1 0.08512 0.0052
2 0.3277 0.0003
3 0.4211 0.0409

0.0

fr

008

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