IXYS DSEC30-03A Datasheet

DSEC 30-03A

HiPerFREDTM Epitaxial Diode

with common cathode and soft recovery

V

RSM

V V

300 300 DSEC 30-03A

Symbol Conditions Maximum Ratings
I

FRMS

I

FAVM

I

FSM

E

AS

I

AR

T

VJ

T

VJM

T

stg

P

tot

M

d

Weight typical 6 g

Symbol Conditions Characteristic Values

IR① TVJ = 25°C VR= V

VF② IF = 15 A; TVJ= 150°C 1.20 V

R

thJC

R

thCH

t

rr

I

RM

Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %

V

RRM

Type

A C A

50 A

TC = 140°C; rectangular, d = 0.5 15 A

TVJ = 45°C; tp = 10 ms (50 Hz), sine 110 A
TVJ = 25°C; non-repetitive 0.8 mJ

IAS = 2.5 A; L = 180 µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive 0.3 A

-55...+175 °C
175 °C

-55...+150 °C

TC = 25°C 95 W
mounting torque 0.8...1.2 Nm

typ. max.

100 mA

0.5 mA

TVJ = 150°C VR= V

RRM
RRM

TVJ= 25°C 1.67 V

1.6 K/W

0.25 K/W

IF = 1 A; -di/dt = 100 A/ms; 30 ns
VR = 30 V; TVJ = 25°C

VR = 100 V; IF = 25 A; -diF/dt = 100 A/ms2.7A
TVJ = 100°C

② Pulse Width = 300 ms, Duty Cycle < 2.0 %

I

FAV

V
t

rr

= 2x 15 A
= 300 V

RRM

= 30 ns

TO-247 AD

A

C

A

A = Anode, C = Cathode, TAB = Cathode

C (TAB)

Features

●

International standard package

●

Planar passivated chips

●

Very short recovery time

●

Extremely low switching losses

●

Low IRM-values

●

Soft recovery behaviour

●

Epoxy meets UL 94V-0

Applications

●

Antiparallel diode for high frequency
switching devices

●

Antisaturation diode

●

Snubber diode

●

Free wheeling diode in converters
and motor control circuits

●

Rectifiers in switch mode power
supplies (SMPS)

●

Inductive heating

●

Uninterruptible power supplies (UPS)

●

Ultrasonic cleaners and welders

Advantages

●

Avalanche voltage rated for reliable
operation

●

Soft reverse recovery for low
EMI/RFI

●

Low IRM reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating
switch

Dimensions see outlines.pdf

Data according to IEC 60747 and per diode unless otherwise specified

IXYS reserves the right to change limits, test conditions and dimensions.

© 2000 IXYS All rights reserved

008

1 - 2

DSEC 30-03A

40

A

30

I

F

TVJ=150°C
T

=100°C

20

VJ

T

VJ

= 25°C

10

0

012

Fig. 1 Forward current IF versus V

V

V

F

F

1.4

1.2

K

f

1.0

I

RM

Q

0.8

r

500

T

= 100°C

VJ

nC

V

= 150V

R

400

Q

r

300

200

I

= 30A

F

I

F = 15A

I

F = 7.5A

100

0

100 1000

-diF/dt

Fig. 2 Reverse recovery charge Q

80

ns

70

t

rr

60

50

40

T

= 100°C

VJ

V

R

I

F

I

F = 15A

I

F = 7.5A

= 150V

= 30A

A/ms

20

T

= 100°C

VJ

A

V

= 150V

R

15

I

RM

IF = 30A
I

F = 15A

I

F = 7.5A

10

5

0

-di

T
I

A/ms

/dt

F

= 100°C

VJ

= 15A

F

V

FR

RM

0.85
µs

0.80

t

fr

0.75

0.70

0.65

200 600 10000 400 800

r

Fig. 3 Peak reverse current I

14

V

12

V

t

FR

fr

10

8

6

0.6
0 40 80 120 160

T

VJ

Fig. 4 Dynamic parameters Qr, I

°C

RM

30

200 600 10000 400 800

-di

A/ms

/dt

F

Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t

10

K/W

1

Z

thJC

0.1

0.01

0.001

0.00001 0.0001 0.001 0.01 0.1 1

s

t

Fig. 7 Transient thermal resistance junction to case

NOTE: Fig. 2 to Fig. 6 shows typical values

© 2000 IXYS All rights reserved

DSEC 30-03A

4

0 200 400 600 800 1000

A/ms

diF/dt

Constants for Z

iR

calculation:

thJC

(K/W) ti (s)

thi

1 0.851 0.005
2 0.328 0.0003
3 0.421 0.041

0.60

fr

008

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