IXYS DSEC240-04A Datasheet
© 2002 IXYS All rights reserved
1 - 1
D4
HiPerFREDTM Epitaxial Diode
with soft recovery
Non isolated
Features
• International standard package
miniBLOC
• Epoxy meets UL 94V-0
• 2 independent FRED in 1 package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low I
RM
-values
• Soft recovery behaviour
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low EMI/RFI
• Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
A1
A2
miniBLOC,
SOT-227 B
Anode 1
Anode 2
Common cathode
DSEC 240-04A
I
FAV
= 2x 120 A
V
RRM
= 400 V
t
rr
= 30 ns
V
RSM
V
RRM
Type
V V
400 400 DSEC 240-04A
231
Symbol Conditions Maximum Ratings
I
FRMS
200 A
I
FAVM
TC = 115°C; rectangular, d = 0.5 120 A
I
FSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine 2000 A
E
AS
TVJ = 25°C; non-repetitive 4 mJ
IAS = 6 A; L = 182 µH
I
AR
VA = 1.5 • VR typ.; f = 10 kHz; repetitive 0.6 A
T
VJ
-40...+150 °C
T
VJM
150 °C
T
stg
-40...+150 °C
P
tot
TC = 25°C 620 W
M
d
mounting torque (M4) 1.1-1.5/9-13 Nm/lb.in.
terminal connection torque (M4) 1.1-1.5/9-13 Nm/lb.in.
Weight typical 30 g
Symbol Conditions Characteristic Values
typ. max.
I
R
① VR= V
RRM;TVJ
= 25°C 2 mA
TVJ = 150°C 8 mA
V
F
② IF = 120 A; TVJ= 125°C 1.07 V
TVJ= 25°C 1.38 V
R
thJC
0.2 K/W
R
thCH
with heatsink compound 0.15 K/W
t
rr
IF = 1 A; -di/dt = 400 A/µs; 30 ns
VR = 30 V; TVJ = 25°C
I
RM
IF = 400 A; -diF /dt = 200 A/µs 5.5 6.8 A
VR = 100 V; TVJ = 100°C
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