IXYS DSEC16-12A Datasheet
DSEC 16-12A
HiPerFREDTM Epitaxial Diode
with common cathode and soft recovery
V
RSM
V V
1200 1200 DSEC 16-12A
Symbol Test Conditions Maximum Ratings
I
FRMS
I
FAVM
I
FRM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight typical 2 g
Symbol Test Conditions Characteristic Values
IR① TVJ = 25°C VR= V
VF② IF = 10 A; TVJ= 150°C 1.96 V
R
thJC
R
thCH
t
rr
I
RM
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
V
RRM
Type
A C A
14 A
TC = 115°C; rectangular, d = 0.5 10 A
tP < 10 µs; rep. rating, pulse width limited by T
VJM
tbd A
TVJ = 45°C; tp = 10 ms (50 Hz), sine 40 A
TVJ = 25°C; non-repetitive 6.9 mJ
IAS = 8 A; L = 180 µH
VA = 1.25·VR typ.; f = 10 kHz; repetitive 0.8 A
-55...+175 °C
175 °C
-55...+150 °C
TC = 25°C 60 W
mounting torque 0.45...0.55 Nm
4...5 lb.in.
typ. max.
60 µA
0.25 mA
TVJ = 150°C VR= V
RRM
RRM
TVJ= 25°C 2.94 V
2.5 K/W
0.5 K/W
IF = 1 A; -di/dt = 50 A/µs; 40 ns
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 12 A; -diF/dt = 100 A/µs8.5A
TVJ = 100°C
② Pulse Width = 300 µs, Duty Cycle < 2.0 %
I
V
t
FAV
rr
= 2x 10 A
= 1200 V
RRM
= 40 ns
TO-220 AB
A
C
A
A = Anode, C = Cathode, TAB = Cathode
C (TAB)
Features
●
International standard package
●
Planar passivated chips
●
Very short recovery time
●
Extremely low switching losses
●
Low IRM-values
●
Soft recovery behaviour
●
Epoxy meets UL 94V-0
Applications
●
Antiparallel diode for high frequency
switching devices
●
Antisaturation diode
●
Snubber diode
●
Free wheeling diode in converters
and motor control circuits
●
Rectifiers in switch mode power
supplies (SMPS)
●
Inductive heating
●
Uninterruptible power supplies (UPS)
●
Ultrasonic cleaners and welders
Advantages
●
Avalanche voltage rated for reliable
operation
●
Soft reverse recovery for low
EMI/RFI
●
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see IXYS Catalog 2000 (CD)
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 1999 IXYS All rights reserved
937
1 - 2
DSEC 16-12A
30
A
25
I
F
20
TVJ=150°C
15
TVJ=100°C
10
TVJ= 25°C
5
0
01234
V
F
Fig. 1 Forward current IF versus V
2.0
1.5
K
f
2000
TVJ= 100°C
VR = 600V
nC
1500
Q
r
IF= 20A
IF= 10A
IF= 5A
1000
500
0
V
100 1000
A/µs
-diF/dt
F
Fig. 2 Reverse recovery charge Q
versus -diF/dt
150
ns
TVJ= 100°C
VR = 600V
r
140
t
rr
130
40
TVJ= 100°C
VR = 600V
A
30
I
RM
IF= 20A
IF= 10A
20
IF= 5A
10
0
200 600 10000 400 800
-di
Fig. 3 Peak reverse current I
versus -diF/dt
120
V
V
t
FR
fr
80
TVJ= 100°C
IF = 10A
V
F
/dt
FR
A/µs
RM
1.2
s
µ
t
fr
0.8
1.0
0.5
I
RM
Q
r
0.0
0 40 80 120 160
T
VJ
Fig. 4 Dynamic parameters Qr, I
Z
versus T
10
K/W
1
thJC
0.1
0.01
VJ
°C
120
IF= 20A
IF= 10A
IF= 5A
110
40
0.4
100
90
200 600 10000 400 800
RM
Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and t
-di
A/µs
/dt
F
0
0 200 400 600 800 1000
A/µs
diF/dt
versus diF/dt
Constants for Z
iR
calculation:
thJC
(K/W) ti (s)
thi
0.0
fr
1 1.449 0.0052
2 0.558 0.0003
3 0.493 0.017
0.001
0.00001 0.0001 0.001 0.01 0.1 1
DSEP 8-12A / DSEC 16-12A
s
t
Fig. 7 Transient thermal resistance junction to case
© 1999 IXYS All rights reserved
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