IXYS DSI75-12B, DSI75-08B, DSAI75-18B, DSAI75-16B, DSAI75-12B Datasheet
...
DS 75 DSI 75
DSA 75 DSAI 75
Rectifier Diode
Avalanche Diode
V
RSM
V V V on stud on stud
900 - 800 DS
1300 - 1200 DS 75-12B DSI 75-12B
1300 1300 1200 DSA 75-12B DSAI 75-12B
1700 1760 1600 DSA 75-16B DSAI 75-16B
1900 1950 1800 DSA 75-18B DSAI 75-18B
① Only for Avalanche Diodes
Symbol Test Conditions Maximum Ratings
I
F(RMS)
I
F(AV)M
P
RSM
I
FSM
2
t TVJ= 45°C t = 10 ms (50 Hz), sine 9800 A2s
I
T
VJ
T
VJM
T
stg
M
d
Weight 21 g
V
ÿ
① V
(BR)min
TVJ= T
T
RRM
VJM
= 100°C; 180° sine 110 A
case
DSA(I) types, TVJ = T
Anode Cathode
75-08B DSI 75-08B
160 A
, tp = 10 ms20kW
VJM
TVJ= 45°C; t = 10 ms (50 Hz), sine 1400 A
VR= 0 t = 8.3 ms (60 Hz), sine 1500 A
TVJ= T
VR= 0 t = 8.3 ms (60 Hz), sine 1310 A
VJM
t = 10 ms (50 Hz), sine 1250 A
VR= 0 t = 8.3 ms (60 Hz), sine 9450 A2s
TVJ= T
VR= 0 t = 8.3 ms (60 Hz), sine 7210 A2s
VJM
t = 10 ms (50 Hz), sine 7820 A2s
-40...+180 °C
180 °C
-40...+180 °C
Mounting torque 2.4-4.5 Nm
21-40 lb.in.
V
RRM
I
F(RMS)
I
F(AV)M
= 800-1800 V
= 160 A
= 110 A
DO-203 AB
C
A
A = Anode C = Cathode
DS DSI
DSA DSAI
1/4-28UNF
A
C
Features
●
International standard package,
JEDEC DO-203 AB (DO-5)
●
Planar glassivated chips
Applications
●
High power rectifiers
●
Field supply for DC motors
●
Power supplies
Advantages
●
Space and weight savings
●
Simple mounting
●
Improved temperature and power
cycling
●
Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
Symbol Test Conditions Characteristic Values
I
R
V
F
V
T0
r
T
R
thJC
R
thJH
d
S
d
A
a Max. allowable acceleration 100 m/s
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
TVJ= T
IF= 150 A; TVJ = 25°C £ 1.17 V
For power-loss calculations only 0.75 V
TVJ= T
DC current 0.5 K/W
DC current 0.9 K/W
Creepage distance on surface 4.05 mm
Strike distance through air 3.9 mm
; VR = V
VJM
VJM
RRM
£ 6mA
2mW
© 2000 IXYS All rights reserved
2
744
1 - 2
DS 75 DSI 75
DSA 75 DSAI 75
I
FSM
1500
A
1000
50Hz, 80%V
RRM
T
VJ
= 45°C
200
A
150
I
F
typ. lim.
TVJ= 180°C
TVJ= 25°C
100
500
T
VJ
= 180°C
50
0
0.0 0.5 1.0 1.5
V
F
V
0
10
-3
10
-2
10
Fig. 1 Forward characteristics Fig. 2 Surge overload current
: crest value, t: duration
I
FSM
200
W
150
P
F
100
-1
t
s
R
:
thJA
1 K/W
1.2 K/W
1.6 K/W
2 K/W
3 K/W
4 K/W
5
10
VR = 0 V
A2s
T
= 45°C
VJ
6
I2t
4
2
4
10
0
10
Fig. 3 I2t versus time (1-10 ms)
200
A
I
F(AV)M
150
100
T
= 180°C
VJ
23456789110
ms
t
DC
180° sin
120°
60°
30°
DC
50
0
0 50 100 150 200
180° sin
120°
60°
30°
I
F(AV)M
0
0 50 100 150 200
A
T
amb
°C
50
0
0 40 80 120 160 200
T
c
ase
Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case
temperature
1.5
K/W
Z
thJH
1.0
30°
60°
120°
180°
DC
R
for various conduction angles d:
thJH
dR
thJH
(K/W)
DC 0.900
180° 1.028
120° 1.085
60° 1.272
30° 1.476
0.5
Constants for Z
iR
calculation:
thJH
(K/W) ti (s)
thi
1 0.0731 0.0015
0.0
10
-3
10
-2
10
-1
10
0
Fig. 6 Transient thermal impedance junction to heatsink
10
1
10
2
s
10
t
2 0.1234 0.0237
3
3 0.4035 0.4838
4 0.3000 1.5
°C
© 2000 IXYS All rights reserved
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