IXYS DSI17-12A, DSI17-08A, DSAI17-16A, DSAI17-12A, DSA17-18A Datasheet

DS 17 DSI 17
DSA 17 DSAI 17

Rectifier Diode
Avalanche Diode

V

RSM

V V V on stud on stud

900 - 800 DS

1300 - 1200 DS 17-12A DSI 17-12A
1300 1300 1200 DSA 17-12A DSAI 17-12A

1700 1750 1600 DSA 17-16A DSAI 17-16A
1900 1950 1800 DSA 17-18A DSAI 17-18A

① Only for Avalanche Diodes

Symbol Test Conditions Maximum Ratings
I

F(RMS)

I

F(AV)M

P

RSM

I

FSM

2

t TVJ= 45°C t = 10 ms (50 Hz), sine 680 A2s

I

T

VJ

T

VJM

T

stg

M

d

Weight 6g

V

ÿ

① V

(BR)min

TVJ= T
T

RRM

VJM

= 125°C; 180° sine 25 A

case

DSA(I) types, TVJ = T

Anode Cathode

17-08A DSI 17-08A

40 A

, tp = 10 ms7kW

VJM

TVJ= 45°C; t = 10 ms (50 Hz), sine 370 A
VR= 0 t = 8.3 ms (60 Hz), sine 400 A

TVJ= T
VR= 0 t = 8.3 ms (60 Hz), sine 320 A

VJM

t = 10 ms (50 Hz), sine 300 A

VR= 0 t = 8.3 ms (60 Hz), sine 660 A2s
TVJ= T

VR= 0 t = 8.3 ms (60 Hz), sine 430 A2s

VJM

t = 10 ms (50 Hz), sine 450 A2s

-40...+180 °C
180 °C

-40...+180 °C

Mounting torque 2.2-2.8 Nm

19-25 lb.in.

V

RRM

I

F(RMS)

I

F(AV)M

= 800-1800 V
= 40 A
= 25 A

DO-203 AA

C

A

A = Anode C = Cathode

DS DSI
DSA DSAI

10-32UNF

A

C

Features

●

International standard package,
JEDEC DO-203 AA (DO-4)

●

Planar glassivated chips

Applications

●

Supplies for DC power equipment

●

DC supply for PWM inverter

●

Field supply for DC motors

●

Battery DC power supplies

Advantages

●

Space and weight savings

●

Simple mounting

●

Improved temperature and power
cycling

●

Reduced protection circuits

Dimensions in mm (1 mm = 0.0394")

Symbol Test Conditions Characteristic Values
I

R

V

F

V

T0

r

T

R

thJC

R

thJH

d

S

d

A

a Max. allowable acceleration 100 m/s

Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions

TVJ= T
IF= 55 A; TVJ = 25°C £ 1.36 V
For power-loss calculations only 0.85 V

TVJ= T
DC current 1.5 K/W

DC current 2.1 K/W
Creepage distance on surface 2.05 mm

Strike distance through air 2.05 mm

; VR = V

VJM

VJM

RRM

£ 4mA

8mW

© 2000 IXYS All rights reserved

2

1 - 2

DS 17 DSI 17
DSA 17 DSAI 17

I

400

300

FSM

50Hz, 80% V

A

RRM

T

= 45°C

VJ

100

I

F

A

80

60

typ. lim.

TVJ= 180°C
TVJ= 25°C

200

T

= 180°C

40

VJ

100

20

0

0.20.40.60.81.01.21.41.61.8

V

V

F

0

10

-3

10

-2

10

-1

Fig. 1 Forward characteristics Fig. 2 Surge overload current

I

: crest value, t: duration

FSM

50
W

40

P

F

30

20

10

DC
180° sin
120°

60°
30°

s

t

R

:

thJA

2.8 K/W

3.2 K/W
4,8 K/W

6.3 K/W

8.5 K/W
Cu 80x80

10

1000

VR = 0 V

800

A2s

600

I2t

400

T

= 45°C

VJ

200

0

100

23456789110

Fig. 3 I2t versus time (1-10 ms)

40

A

30

I

F(AV)M

20

10

T

VJ

= 180°C

ms

t

0

0 1020304050

I

F(AV)M

0

0 50 100 150 200

A

T

°C

amb

0

0 50 100 150

T

c

ase

Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case

temperature 180° sine

R

for various conduction angles d:

thJH

K/W

dR

2

Z

thJH

DC 2.10

180° 2.23

thJH

(K/W)

120° 2.33

60° 2.53
30° 2.72

1

Constants for Z

iR

calculation:

thJH

(K/W) ti (s)

thi

1 0.1006 0.0021
2 0.5311 0.0881

0

10

-3

10

-2

10

-1

10

0

10

1

s

10

t

3 0.8683 2.968

2

4 0.600 3.20

Fig. 6 Transient thermal impedance junction to heatsink

°C

© 2000 IXYS All rights reserved

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