IXYS DSA 90 C 200HB Service Manual
Schottky
A
A
A
A
VIV
VAV
j
Ω
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
DSA 90 C 200HB
preliminary
=
=
=
2x
200
45
0.86
RRM
FAV
F
Part number
DSA 90 C 200HB
Features / Advantages:
● Very low Vf
● Extremely low switching losses
● Low Irm-values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Low losses
Symbol Definition
V
RRM
I
R
V
F
I
FAV
V
F0
r
F
R
thJC
T
VJ
P
tot
I
FSM
C
J
E
S
I
R
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
threshold voltage
slope resistance
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
unction capacitance
non-repetitive avalanche energy
repetitive avalanche current
Applications:
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
Conditions
=
200
V
R
V
=
R
I
=A
45
F
=A90
I
F
IF=A45
=A90
I
F
rectangular, d = 0.5
for power loss calculation only
tp=10
VR=V; f = 1 MHz
I
V
ms (50 Hz), sine
100
=A;L =µH
tbd 100
S
=
1.5·VRtyp.;
123
T
VJ
V°C=
V200
T
VJ
T
VJ
TVJ=°C25
T
VJ
T
C
T
VJ
T
C
T
VJ
T
VJ
T
VJ
f = 10 kHz
=
°C
25
25
°C=
125
125
°C
=
=150°C
= 175 °C
25
°C=
=45°C
25
°C
=
25
°C=
Backside: cathode
Package:
TO-247AD
● Industry standard outline
● Epoxy meets UL 94V-0
● RoHS compliant
R a t i n g s
min.
typ. max.
200
1.8
0.96
1.18
0.86
6.5
0.55 K/W
-55
175
275 W
450
115 pF
tbd mJ
tbd
45
Unit
V
mA
mA
5
V
V
V
V1.14
A
V0.52
m
°C
A
A
IXYS reserves the right to change limits, conditions and dimensi
© 2007 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20070703a
DSA 90 C 200HB
g
preliminary
Ratings
Symbol Definition
I
R
M
F
T
RMS
thCH
D
C
st
RMS current
thermal resistance case to heatsink
mounting torque
mounting force with clip
storage temperature
Weight
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Conditions
per pin*
0.8
20
-55
typ. max.min.
70
0.25
120
150
6
Unit
A
K/W
Nm1.2
N
°C
g
Outlines
TO-247AD
Symbol Inches Millimeters
min max min max
A 0.185 0.209 4.70 5.30
A1 0.087 0.102 2.21 2.59
A2 0.059 0.098 1.50 2.49
D 0.819 0.845 20.79 21.45
E 0.610 0.640 15.48 16.24
E2 0.170 0.216 4.31 5.48
e0.215BSC5.46BSC
L 0.780 0.800 19.80 20.30
L1 - 0.177 - 4.49
ØP 0.140 0.144 3.55 3.65
Q 0.212 0.244 5.38 6.19
S0.242BSC6.14BSC
b 0.039 0.055 0.99 1.40
b2 0.065 0.094 1.65 2.39
b4 0.102 0.135 2.59 3.43
c 0.015 0.035 0.38 0.89
D10.515-13.07D2 0.020 0.053 0.51 1.35
E10.530-13.45ØP1 - 0.291 - 7.39
IXYS reserves the right to change limits, conditions and dimensi
© 2007 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20070703a
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