IXYS DSA 20 C 150PN Service Manual

Schottky
V
V
V
A
V
j
High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode
DSA 20 C 150PN
advanced
=
I
RRM
FAV
F
= =
2x
150
10
0.74
Part number
(Marking on product)
DSA 20 C 150PN
Features / Advantages:
Very low Vf
Extremely low switching losses
Improved thermal behaviour
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Symbol Definition
V
RRM
I
R
V
F
I
FAV
V
F0
r
F
R
thJC
T
VJ
P
tot
I
FSM
C
J
E
AS
I
AR
max. repetitive reverse voltage reverse current
forward voltage
average forward current threshold voltage
slope resistance thermal resistance junction to case
virtual junction temperature total power dissipation max. forward surge current
unction capacitance non-repetitive avalanche energy repetitive av a l an che current
123
Applications:
Rectifiers in switch mode power supplies (SMPS)
Free wheeling diode in low voltage converters
Conditions
150
V
=
R
=
V
R
=A
10
I
F
=A20
I
F
=A10
I
F
=A20
I
F
rectangular, d = 0.5
for power loss calculation only
ms (50 Hz), sine
=10
t
p
VR= V; f = 1 MHz
I
=A;L = µH
AS
1.5·V
=
V
A
V
V150
R
typ.;
100
f = 10 kHz
=
T
VJ
T
VJ
T
VJ
=
T
VJ
T
=
VJ
T
=140°C
C
= 175 °C
T
VJ
T
C
T
=45°C
VJ
=
T
VJ
=
T
VJ
25
25
125
25
125
25
25
25
Package:
TO-220FPAB
Industry standard outline
Plastic overmolded tab for
electrical isolation
Epoxy meets UL 94V-0
RoHS compliant
R a t i n g s
min.
typ. max.
°C
°C=
°C=
°C
°C
-55
°C=
°C
°C
Unit
0.3
mA
mA
3
0.88
0.99
0.74
10
0.55
11.5
m
4.50 K/W
175
°C
35 W
60
pF
tbd mJ
tbd
V150
V
V
V
V0.86
A
V
A
A
IXYS reserves the right to change limits, conditions and dimensi
© 2005 IXYS all rights reserved
0614
Data according to IEC 60747and per diode unless otherwise specified
DSA 20 C 150PN
advanced
Ratings
Symbol Definition
I
R
M
F
T
RMS
thCH
D
C
stg
RMS current thermal resistance case to heatsink mounting torque
mounting force with clip storage temperature
Weight
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside.
Conditions
per pin*
0.4
20
-55
typ. max.min.
35
0.50
60
150
2
Unit
A
K/W
Nm0.6
N
°C
g
Outlines
Q
L1
TO-220FPAB
b1
ØP
E
A
A1
H
D
A2
L
b
c
e
IXYS reserves the right to change limits, conditions and dimensi
© 2005 IXYS all rights reserved
0614
Data according to IEC 60747and per diode unless otherwise specified
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