IXYS DSI17-12A, DSI17-08A, DSAI17-16A, DSAI17-12A, DSA17-18A Datasheet
...
DS 17 DSI 17
DSA 17 DSAI 17
Rectifier Diode
Avalanche Diode
V
RSM
V V V on stud on stud
900 - 800 DS
1300 - 1200 DS 17-12A DSI 17-12A
1300 1300 1200 DSA 17-12A DSAI 17-12A
1700 1750 1600 DSA 17-16A DSAI 17-16A
1900 1950 1800 DSA 17-18A DSAI 17-18A
① Only for Avalanche Diodes
Symbol Test Conditions Maximum Ratings
I
F(RMS)
I
F(AV)M
P
RSM
I
FSM
2
t TVJ= 45°C t = 10 ms (50 Hz), sine 680 A2s
I
T
VJ
T
VJM
T
stg
M
d
Weight 6g
V
ÿ
① V
(BR)min
TVJ= T
T
RRM
VJM
= 125°C; 180° sine 25 A
case
DSA(I) types, TVJ = T
Anode Cathode
17-08A DSI 17-08A
40 A
, tp = 10 ms7kW
VJM
TVJ= 45°C; t = 10 ms (50 Hz), sine 370 A
VR= 0 t = 8.3 ms (60 Hz), sine 400 A
TVJ= T
VR= 0 t = 8.3 ms (60 Hz), sine 320 A
VJM
t = 10 ms (50 Hz), sine 300 A
VR= 0 t = 8.3 ms (60 Hz), sine 660 A2s
TVJ= T
VR= 0 t = 8.3 ms (60 Hz), sine 430 A2s
VJM
t = 10 ms (50 Hz), sine 450 A2s
-40...+180 °C
180 °C
-40...+180 °C
Mounting torque 2.2-2.8 Nm
19-25 lb.in.
V
RRM
I
F(RMS)
I
F(AV)M
= 800-1800 V
= 40 A
= 25 A
DO-203 AA
C
A
A = Anode C = Cathode
DS DSI
DSA DSAI
10-32UNF
A
C
Features
●
International standard package,
JEDEC DO-203 AA (DO-4)
●
Planar glassivated chips
Applications
●
Supplies for DC power equipment
●
DC supply for PWM inverter
●
Field supply for DC motors
●
Battery DC power supplies
Advantages
●
Space and weight savings
●
Simple mounting
●
Improved temperature and power
cycling
●
Reduced protection circuits
Dimensions in mm (1 mm = 0.0394")
Symbol Test Conditions Characteristic Values
I
R
V
F
V
T0
r
T
R
thJC
R
thJH
d
S
d
A
a Max. allowable acceleration 100 m/s
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
TVJ= T
IF= 55 A; TVJ = 25°C £ 1.36 V
For power-loss calculations only 0.85 V
TVJ= T
DC current 1.5 K/W
DC current 2.1 K/W
Creepage distance on surface 2.05 mm
Strike distance through air 2.05 mm
; VR = V
VJM
VJM
RRM
£ 4mA
8mW
© 2000 IXYS All rights reserved
2
1 - 2
DS 17 DSI 17
DSA 17 DSAI 17
I
400
300
FSM
50Hz, 80% V
A
RRM
T
= 45°C
VJ
100
I
F
A
80
60
typ. lim.
TVJ= 180°C
TVJ= 25°C
200
T
= 180°C
40
VJ
100
20
0
0.20.40.60.81.01.21.41.61.8
V
V
F
0
10
-3
10
-2
10
-1
Fig. 1 Forward characteristics Fig. 2 Surge overload current
I
: crest value, t: duration
FSM
50
W
40
P
F
30
20
10
DC
180° sin
120°
60°
30°
s
t
R
:
thJA
2.8 K/W
3.2 K/W
4,8 K/W
6.3 K/W
8.5 K/W
Cu 80x80
10
1000
VR = 0 V
800
A2s
600
I2t
400
T
= 45°C
VJ
200
0
100
23456789110
Fig. 3 I2t versus time (1-10 ms)
40
A
30
I
F(AV)M
20
10
T
VJ
= 180°C
ms
t
0
0 1020304050
I
F(AV)M
0
0 50 100 150 200
A
T
°C
amb
0
0 50 100 150
T
c
ase
Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case
temperature 180° sine
R
for various conduction angles d:
thJH
K/W
dR
2
Z
thJH
DC 2.10
180° 2.23
thJH
(K/W)
120° 2.33
60° 2.53
30° 2.72
1
Constants for Z
iR
calculation:
thJH
(K/W) ti (s)
thi
1 0.1006 0.0021
2 0.5311 0.0881
0
10
-3
10
-2
10
-1
10
0
10
1
s
10
t
3 0.8683 2.968
2
4 0.600 3.20
Fig. 6 Transient thermal impedance junction to heatsink
°C
© 2000 IXYS All rights reserved
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