IXYS DSA2-18F, DSA2-16F, DSA2-12F, DS2-12F, DS2-08F Datasheet

© 2000 IXYS All rights reserved

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V

RSM

V

(BR)min

ÿ

① V

RRM

Standard Avalanche

V V V Types Types

900 800 DS

9-08F

1300 1300 1200 DS 9-12F DSA 9-12F
1700 1750 1600 DSA 9-16F
1900 1950 1800 DSA 9-18F

① Only for Avalanche Diodes

Symbol Test Conditions Maximum Ratings
I

F(RMS)

TVJ= T

VJM

18 A

I

F(AVM)

T

case

= 150°C; 180° sine 11 A

P

RSM

DSA types, TVJ = T

VJM

, tp = 10 ms 4.5 kW

I

FSM

TVJ= 45°C; t = 10 ms (50 Hz), sine 250 A
VR= 0 t = 8.3 ms (60 Hz), sine 265 A

T

VJ

= T

VJM

t = 10 ms (50 Hz), sine 200 A

VR= 0 t = 8.3 ms (60 Hz), sine 220 A

I

2

t TVJ= 45°C t = 10 ms (50 Hz), sine 310 A2s

VR= 0 t = 8.3 ms (60 Hz), sine 295 A2s
TVJ= T

VJM

t = 10 ms (50 Hz), sine 200 A2s

VR= 0 t = 8.3 ms (60 Hz), sine 190 A2s

T

VJ

-40...+180 °C

T

VJM

180 °C

T

stg

-40...+180 °C

M

d

Mounting torque 2.2-2.8 Nm

19-25 lb.in.

Weight 5g

V

RRM

= 800-1800 V

I

F(RMS)

= 18 A

I

F(AV)M

= 11 A

Features

●

International standard package,
JEDEC DO-203 AA

●

Planar glassivated chips

Applications

●

Supplies for DC power equipment

●

DC supply for PWM inverter

●

Field supply for DC motors

●

Battery DC power supplies

Advantages

●

Space and weight savings

●

Simple mounting

●

Improved temperature and power
cycling

●

Reduced protection circuits

Symbol Test Conditions Characteristic Values
I

R

TVJ= T

VJM

; VR = V

RRM

£ 3mA

V

F

IF= 36 A; TVJ = 25°C £ 1.4 V

V

T0

For power-loss calculations only 0.85 V

r

T

TVJ= T

VJM

15 mW

R

thJC

DC current 2.0 K/W
180° sine 2.17 K/W

R

thJH

DC current 3.0 K/W

d

S

Creepage distance on surface 2.0 mm

d

A

Strike distance through air 2.0 mm

a Max. allowable acceleration 100 m/s

2

Dimensions in mm (1 mm = 0.0394")

Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions

DS 9
DSA 9

Rectifier Diode
Avalanche Diode

A

C

DO-203 AA

A = Anode C = Cathode

C

A

M5

© 2000 IXYS All rights reserved

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10

-3

10

-2

10

-1

10

0

10

1

0

50

100

150

200

250

300

23456789110

200

400

600

800

100

1000

0.00.20.40.60.81.01.21.41.6

0

10

20

30

40

50

0 5 10 15 20

0

5

10

15

20

25

0 50 100 150 200

0

10

-3

10

-2

10

-1

10

0

10

1

10

2

10

3

10

4

0

1

2

3

4

5

I2t

I

FSM

A

I

F

A

V

F

t

s

t

ms

P

F

W

I

F(AV)M

A

T

amb

°C

t

s

Z

thJH

K/W

A2s

0 50 100 150 200 250

0

5

10

15

20

25

I

F(AV)M

T

c

A

°C

V

DS 9
DSA 9

Fig. 6 Transient thermal impedance junction to heatsink

Fig. 1 Forward characteristics Fig. 2 Surge overload current

I

FSM

: crest value, t: duration

Fig. 3 I2t versus time (1-10 ms)

R

thJH

for various conduction angles d:

dR

thJH

(K/W)

DC 3.0
180° 3.35
120° 3.56

60° 4.0
30° 4.64

Constants for Z

thJH

calculation:

iR

thi

(K/W) ti (s)

1 0.095 0.00032
2 0.515 0.0102
3 1.39 0.360
4 1.0 2.30

Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case

temperature

typ. lim.

TVJ= 180°C
TVJ= 25°C

50Hz, 80%V

RRM

T

VJ

= 45°C

T

VJ

= 180°C

VR = 0 V

TVJ=45°C

TVJ=180°C

DC
d = 180° sin
d = 120°
d = 60°
d = 30°

30°
60°
120°
180°
DC

R

thJA

:

8.3 K/W
13 K/W

(CU80x80)
18 K/W

DC
180° sin
120°

60°
30°

ase