IXYS DPG 60 C 300 HB Service Manual
DPG 60 C 300 HB
V
V
A
j
HiPerFRED
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG 60 C 300 HB
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Symbol Definition
V
RRM
I
R
V
F
I
FAV
V
F0
r
F
R
thJC
T
VJ
P
tot
I
FSM
I
RM
rr
C
J
E
AS
I
AR
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
threshold voltage
slope resistance
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
unction capacitance
non-repetitive avalanche energy
repetitive avalanche current
for power loss calculation only
1 2 3
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Conditions
V
=
300
R
V
=
R
I
=A
30
F
IF=A60
I
=A
30
F
=A60
I
F
rectangular, d = 0.5
t = 10 ms
IF=A;30
-diF=A/µs200/dtt
V= V;150 T
R
=A;L =µH
I
V
9
AS
=
A
T
VJ
V°C=
V300
(50 Hz), sine
VJ
T
VJ
T
VJ
VJ
T
C
C
T
VJ
TVJ=°C
VR=V100
T= °C
VJ
TVJ=°C25
T= °C
VJ
f = 1 MHz = °C25
100
VJ
T= °C25
VJ
f = 10 kHz1.5·VRtyp.;
=
I
t
Package:
● Housing:
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
25
150
25
=°C
=°C
150
= 135°C
25
=45°C
25
=
2x
= 35 ns
TO-247
R a t i n g s
min.
°C=25
°C=mA0.1
°C=
300
30
Backside: cathode
typ. max.
3A
35
tbd
40 pF
Unit
µA
1T
1.34
1.63
1.39
30
10.5
m
0.95 K/W
175 °C-55
160 WT
300
ns
ns
0.5 mJ
0.9
V300
V
V
V1.06T
V
A
V0.70TVJ= 175°C
Ω
A
Atbd
A
IXYS reserves the right to change limits, conditions and dimensions.
© 2007 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
0629
DPG 60 C 300 HB
)
Ratings
Symbol Definition
I
R
T
RMS
stg
thCH
RMS current
thermal resistance case to heatsink
storage temperature
per pin
1
Weight g6
M
D
F
C
1)
I is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
RMS
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
mounting torque
mounting force with clip
Product Marking
typ. max.min.Conditions
50
-55
0.8
20
Unit
A
K/W0.25
°C150
Nm1.2
N120
Logo
Marking on product
DateCode
Assembly Code
Part number
D
Diode
abcdef
YYWW
XXXXXX
Ordering Delivering Mode Base Qty Code Key
Standard
Part Name
DPG 60 C 300 HB 502163Tube 30
Similar Part Package
DPG60C300PC
DPG60C300QB
DPG60C400QB
DPG60C200QB
Marking on Product
DPG60C300HB
TO-263 (D2Pak)
TO-3P
TO-3P
TO-3P
Voltage Class
300
300
400
200
=
P
HiPerFRED
=
G
extreme fast
=
60
Current Rating [A]
=
C
Common Cathode
=
300
Reverse Voltage [V]
=
HB
TO-247AD (3)
=
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per diode unless otherwise specified
0629
© 2007 IXYS all rights reserved
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