IXYS DPG 30 C 400 HB Service Manual
DPG 30 C 400 HB
V
V
A
j
advanced
HiPerFRED
High Performance Fast Recove
Low Loss and Soft Recovery
Common Cathode
Part number
DPG 30 C 400 HB
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Symbol Definition
V
RRM
I
R
V
F
I
FAV
V
F0
r
F
R
thJC
T
VJ
P
tot
I
FSM
I
RM
t
rr
C
J
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
threshold voltage
slope resistance
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
unction capacitance
for power loss calculation only
1 2 3
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Conditions
T
VJ
V
=
V°C=
400
R
V
=
R
I
=A
15
F
V400
25
VJ
T
150
VJ
T
25
=°C
VJ
IF=A30
I
=A
15
F
=A30
I
F
rectangular, d = 0.5
t = 10 ms
(50 Hz), sine
IF=A10
150
= 145°C
T
C
25
C
T
=45°C
VJ
25
TVJ=°C
T = 125°C
VJ
-diF=A200/dt
VR=V100 TVJ=°C25
T = 125°C
VJ
V= V;200 T
R
f = 1 MHz = °C25
VJ
=
I
t
=
= 45 ns
400
2x
15
Backside: cathode
Package:
● Housing:
TO-247
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
R a t i n g s
typ. max.
min.
°C=25
°C=mA0.1
1.39
1.58
1.27
18.7
1.70 K/W
°C=
4A
45
tbd
15 pF
15
175 °C-55
90 WT
150
Unit
V400
µA
1T
V
V
V1.07TVJ=°C
V
A
V0.75TVJ= 175°C
m
Ω
A
Atbd
ns
ns
IXYS reserves the right to change limits, conditions and di mensions.
© 2007 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20071004
DPG 30 C 400 HB
)
advanced
Ratings
Symbol Definition
I
R
T
RMS
stg
thCH
RMS current
thermal resistance case to heatsink
storage temperature
per pin
1
Weight g6
M
D
F
C
1)
I is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
RMS
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
mounting torque
mounting force with clip
Product Marking
typ. max.min.Conditions
35
-55
0.8
20
Unit
A
K/W0.25
°C150
Nm1.2
N120
Logo
Marking on product
DateCode
Assembly Code
Part number
D
Diode
abcdef
YYWW
XXXXXX
Ordering Delivering Mode Base Qty Code Key
Standard
Part Name
DPG 30 C 400 HB 505790Tube 30
Similar Part Package
DPG30C400PB TO-220
Marking on Product
DPG30C400HB
Voltage Class
400
=
P
HiPerFRED
=
G
extreme fast
=
30
Current Rating [A]
=
C
Common Cathode
=
400
Reverse Voltage [V]
=
HB
TO-247AD (3)
=
IXYS reserves the right to change limits, conditions and di mensions.
Data according to IEC 60747and per diode unless otherwise specified
20071004
© 2007 IXYS all rights reserved
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