IXYS DHG 40 C 1200 HB Service Manual
DHG 40 C 1200 HB
V
V
A
j
advanced
Sonic Fast Recovery Diode
High Performance Fast Recove
Low Loss and Soft Recovery
Common Cathode
Part number
DHG 40 C 1200 HB
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Symbol Definition
V
RRM
I
R
V
F
I
FAV
V
F0
r
F
R
thJC
T
VJ
P
tot
I
FSM
I
RM
rr
C
J
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
threshold voltage
slope resistance
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
unction capacitance
for power loss calculation only
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Conditions
V
=
R
V
=
R
I
=A
F
IF=A40
I
=A
F
=A40
I
F
rectangular, d = 0.5
t = 10 ms
IF=A;20
-diF=A/µs750/dtt
V= V;600 T
R
1 2 3
V°C=
1200
V1200
20
20
(50 Hz), sine
VR=V800
f = 1 MHz = °C25
I
t
Package:
● Housing:
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
T
VJ
VJ
T
VJ
T
VJ
VJ
T
C
C
T
VJ
TVJ=°C
T= °C
VJ
T
VJ
T= °C
VJ
VJ
°C=25
25
°C=mA3
125
25
=°C
=°C
150
=85°C
25
°C=
=45°C
25
=°C25
==1200
2x
20
= 75 ns
Backside: cathode
TO-247
R a t i n g s
typ. max.
min.
2.69
3.52
3.29
33.8
0.90 K/W
19 A
75
tbd
tbd pF
30T
20
150 °C-55
140 WT
135
Unit
µA
m
ns
ns
V1200
V
V
V2.35T
V
A
V1.60TVJ= 150°C
Ω
A
Atbd
IXYS reserves the right to change limits, conditions and di mensions.
© 2007 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
0629
DHG 40 C 1200 HB
)
advanced
Ratings
Symbol Definition
I
R
T
RMS
stg
thCH
RMS current
thermal resistance case to heatsink
storage temperature
per pin
1
Weight g6
M
D
F
C
1)
I is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
RMS
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
mounting torque
mounting force with clip
Product Marking
typ. max.min.Conditions
50
-55
0.8
20
Unit
A
K/W0.25
°C150
Nm1.2
N120
Logo
Marking on product
DateCode
Assembly Code
Part number
D
Diode
abcdef
YYWW
XXXXXX
Ordering Delivering Mode Base Qty Code Key
Standard
Part Name
DHG 40 C 1200 HB 505138Tube 30
Similar Part Package
DHG40C1200PB
DHG40C600HB
DHG40C600PB
Marking o n Pr o duc t
DHG40C1200HB
TO-220
TO-247
TO-220
Voltage class
1200
600
600
=
H
Sonic Fast Recovery Diode
=
G
extreme fast
=
40
Current Rating [A]
=
C
Common Cathode
=
1200
Reverse Voltage [V]
=
HB
TO-247AD (3)
=
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per diode unless otherwise specified
0629
© 2007 IXYS all rights reserved
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