IXYS DGSS10-06CC Datasheet
ADVANCE TECHNICAL INFORMATION
DGSS 10-06CC
Gallium Arsenide Schottky Diode
ISOPLUS220
Electrically Isolated Back Surface
Q
V
RRM
V V
600 300 DGSS 10-06CC
Symbol Conditions Maximum Ratings
I
DC
I
FAV
I
FSM
T
VJ
T
stg
P
tot
V
ISOL
F
C
Weight typical 2 g
V
RRM
TC = 25°C 9 A
T
C
TVJ = 25°C; tp = 10 ms, sine 30 A
TC = 25°C 30 W
50/60 Hz RMS; I
Mounting force 11...65 / 4...11 N / lb
TM
Type
1 2 3
= 90°C; 50% Duty Cycle; Square wave 6 A
-55...+175 °C
-55...+150 °C
≤ 1 mA 2500 V~
ISOL
I
DC
V
RRM
C
Junction
ISOPLUS220
* Patent pending
= 9 A
= 600 V
= 18 pF
TM
1
2
3
Isolated back surface *
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low forward voltage
l
Very high switching speeds
l
Soft reverse recovery
l
Temperature independent switching
l
High temperature operation capability
l
Low cathode to tab capacitance
(<15pF)
l
Epoxy meets UL 94V-0
Symbol Conditions Characteristic Values
typ. max.
Q
I
R
R
V
F
TVJ = 25°C VR= V
TVJ = 150°C VR= V
RRM
RRM
6mA
1.3 mA
IF = 7.5 A; TVJ= 25°C 1.2 V
IF = 7.5 A; TVJ= 125°C 1.3 1.5 V
C
J
R
thJC
R
thCH
Notes: Data given for Pulse test TVJ= 125°C:
VR = 100 V; TVJ= 125°C 18 pF
5 K/W
0.6 K/W
Q Diodes connected in series
R Pulse test: pulse width = 5 ms, Duty Cycle < 2.0 %
S Pulse test: pulse width = 300us, Duty Cycle < 2.0 %
Applications
l
Switched mode power supplies
(SMPs)
l
High frequency converters
l
Resonant converters
See DGS10-025A data sheet for
characteristic curves
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
98863 (06/02)
ISOPLUS220 OUTLINE
DGSS 10-06CC
Note: All terminals are solder plated.
1 - Cathode
2 - Anode/Cathode
3 - Anode
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