IXYS DGS 17-03CS, DGSK 36-03CS Service Manual
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DGS 17-03CS
DGSK 36-03CS
Gallium Arsenide Schottky Rectifier
Second generation
V
RRM
I
DC
C
Junction
= 300 V
= 29 A
= 10.7 pF
Type Marking on product Circuit Package
DGS 17-03CS 17A300AS
DGSK 36-03CS DGSK 36-03CS
Common cathode
Single
Diode
Symbol Conditions Maximum Ratings
V
RRM/RSM
I
I
I
P
FAV
FAV
FSM
tot
TC = 25°C; DC 29 A
TC = 90°C; DC 17.5 A
TVJ = 45°C; tp = 10 ms (50 Hz), sine 20 A
TC = 25°C34W
Symbol Conditions Characteristic Values
min. typ. max.
V
F
IF = 7.5 A; TVJ = 25°C 1.5 1.9 V
IF = 7.5 A; TVJ = 125°C 1.1 V
I
R
I
RM
t
rr
C
J
R
thJC
Data according to IEC 60747 and per diode unless otherwise specified
VR = V
VR = V
;TVJ = 25°C 0.25 mA
RRM
;TVJ = 125°C 0.25 mA
RRM
IF = 5 A; -diF/dt = 150 A/µs; 1.4 A
VR = 150 V; TVJ = 125°C 23 ns
VR = 150 V; TVJ = 125°C 10.7 pF
AC
ACA
300 V
4.4 K/W
TO-252 AA
TO-263 AB
A = Anode, TAB = Cathode
Features
GaAs Schottky Diode with Enhanced
Barrier Height:
• lowest operating forward voltage drop due
to additional injection of minority carriers
• high switching speed
- low junction capacity of GaAs diode
independent from temperature
- short and low reverse recovery current
peak due to short lifetime of minority
carriers
- soft turn off
Surface Mount Packages:
• Incorporating Single and Dual Diode
Topologies
• Industry Standard Package Outlines
• Epoxy meets UL 94V-0
Applications
Switched Mode Power Supplies:
• AC-DC converters
• DC-DC converters
with:
• high switching frequency
• high efficiency
• low EMI
for use e. g. in:
Component
Symbol Conditions Maximum Ratings
T
VJ
T
stg
-55...+175 °C
-55...+150 °C
• telecom
• computer
• automotive equipment
A
A
A
A
TAB
TAB
Symbol Conditions Characteristic Values
min. typ. max.
Weight TO-252 0.3 g
TO-263 2 g
IXYS reserves the right to change limits, Conditions and dimensions.
© 2004 IXYS All rights reserved
435
1 - 2
DGS 17-03CS
DGSK 36-03CS
100
200
100
A
10
I
F
C
J
pF
1
=
T
VJ
125°C
0.1
25°C
0.01
0.00.51.01.52.0
V
V
F
10
T
= 125°C
VJ
1
0.1 1 10 100 1000
Fig. 1 typ. forward characteristics Fig. 2 typ. junction capacity
versus blocking voltage
10
K/W
1
Z
thJC
0.1
Single Pulse
TO-252
TO-263
Outlines TO-252 AA
1 Anode
2 NC
3 Anode
4 Cathode
Dim. Millimeter Inches
Min. Max. Min. Max.
V
V
R
A 2.19 2.38 0.086 0.094
A1 0.89 1.14 0.035 0.045
A2 0 0.13 0 0.005
b 0.64 0.89 0.025 0.035
b1 0.76 1.14 0.030 0.045
b2 5.21 5.46 0.205 0.215
c 0.46 0.58 0.018 0.023
c1 0.46 0.58 0.018 0.023
D 5.97 6.22 0.235 0.245
D1 4.32 5.21 0.170 0.205
E 6.35 6.73 0.250 0.265
E1 4.32 5.21 0.170 0.205
e 2.28 BSC 0.090 BSC
e1 4.57 BSC 0.180 BSC
H 9.40 10.42 0.370 0.410
L 0.51 1.02 0.020 0.040
L1 0.64 1.02 0.025 0.040
L2 0.89 1.27 0.035 0.050
L3 2.54 2.92 0.100 0.115
Outlines TO-263 AB
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
t
Fig. 3 typ. thermal impedance junction to case
IXYS reserves the right to change limits, Conditions and dimensions.
© 2004 IXYS All rights reserved
DGS17-03CS
s
1. Gate
2. Collector
3. Emitter
4. Collector
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 8.00 8.89 .315 .350
E 9.65 10.29 .380 .405
E1 6.22 8.13 .245 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.20 0 .008
R 0.46 0.74 .018 .029
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