IXYS DGS20-025A, DGS20-022A, DGSK40-025A, DGSK40-022A Datasheet
DGS 20-022A DGSK 40-022A
DGS 20-025A DGSK 40-025A
Gallium Arsenide Schottky Rectifier
Preliminary Data
V
RSM
V V
220 220 DGS 20-022A
250 250 DGS 20-025A
V
RSM
V V
220 220 DGSK 40-022A
250 250 DGSK 40-025A
Symbol Conditions Maximum Ratings
I
FAV
I
FAV
I
FSM
T
VJ
T
stg
P
tot
M
d
V
RRM
V
RRM
Type
Type
Single
Common cathode
AC
ACA
TC = 25°C; DC 18 A
TC = 90°C; DC 13 A
TVJ = 45°C; tp = 10 ms (50 Hz), sine 30 A
-55...+175 °C
-55...+150 °C
TC = 25°C48W
mounting torque 0.4...0.6 Nm
I
FAV
V
RRM
C
Junction
TO-220 AC
A = Anode, C = Cathode , TAB = Cathode
TO-220 AB
= 18 A
= 220/250 V
= 26 pF
C
A
A
C
A
C (TAB)
C (TAB)
Features
●
Low forward voltage
●
Very high switching speed
●
Low junction capacity of GaAs
- low reverse current peak at turn off
●
Soft turn off
●
Temperature independent switching
behaviour
●
High temperature operation capability
●
Epoxy meets UL 94V-0
Applications
●
MHz Switched mode power supplies
(SMPs)
●
Small size SMPs
●
High frequency converters
●
Resonant converters
Symbol Conditions Characteristic Values
typ. max.
IR TVJ = 25°C VR = V
TVJ = 125°C VR = V
V
F
IF = 7.5 A; TVJ = 125°C 1.3 V
RRM
RRM
2.0 mA
2.0 mA
IF = 7.5 A; TVJ = 25°C 1.2 1.5 V
C
J
R
thJC
R
thCH
VR = 100 V; TVJ = 125°C 26 pF
3.1 K/W
0.5 K/W
Weight 2g
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
© 2001 IXYS All rights reserved
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1 - 2
DGS 20-022A DGSK 40-022A
DGS 20-025A DGSK 40-025A
30
10
A
I
F
300
pF
C
J
100
1
T
=
VJ
0.1
0.01
0.0 0.5 1.0 1.5 2.0 2.5
125°C
25°C
10
V
V
F
0.1 1 10 100 1000
Fig. 1 typ. forward characteristics Fig. 2 typ. junction capacity
versus blocking voltage
10
K/W
1
Single Pulse
T
VJ
V
= 125°C
V
R
Outline (center pin only for DGSK types)
Z
thJC
0.1
0.01
DGS10-015/018BS
0.00001 0.0001 0.001 0.01 0.1 1 10
s
t
Fig. 3 typ. thermal impedance junction to case
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium
Arsenide Schottky diodes:
conduction
forward characteristics
turn off characteristics
turn on characteristics
Rectifier Diode
by majority + minority carriers
VF (IF)
extraction of excess carriers
causes temperature dependant
reverse recovery (trr, IRM, Qrr)
delayed saturation leads to V
GaAs Schottky Diode
by majority carriers only
VF (IF), see Fig. 1
reverse current charges
junction capacity CJ, see Fig. 2;
not temperature dependant
no turn on overvoltage peak
FR
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.38 0.56 0.015 0.022
R 2.29 2.79 0.090 0.110
© 2001 IXYS All rights reserved
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