IXYS DGS10-025A, DGS10-022A, DGSK20-025A, DGSK20-022A Datasheet
© 2001 IXYS All rights reserved
1 - 2
DGS 10-022A DGSK 20-022A
DGS 10-025A DGSK 20-025A
V
RSM
V
RRM
Type
V V
220 220 DGS 10-022A
250 250 DGS 10-025A
V
RSM
V
RRM
Type
V V
220 220 DGSK 20-022A
250 250 DGSK 20-025A
Preliminary Data
AC
C
TO-220 AC
A
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
Single
Common cathode
TO-220 AB
A
C
A
C (TAB)
ACA
119
Symbol Conditions Maximum Ratings
I
FAV
TC = 25°C; DC 12 A
I
FAV
TC = 90°C; DC 9 A
I
FSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine 20 A
T
VJ
-55...+175 °C
T
stg
-55...+150 °C
P
tot
TC = 25°C34W
M
d
mounting torque 0.4...0.6 Nm
Features
●
Low forward voltage
●
Very high switching speed
●
Low junction capacity of GaAs
- low reverse current peak at turn off
●
Soft turn off
●
Temperature independent switching
behaviour
●
High temperature operation capability
●
Epoxy meets UL 94V-0
Applications
●
MHz Switched mode power supplies
(SMPs)
●
Small size SMPs
●
High frequency converters
●
Resonant converters
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
Gallium Arsenide Schottky Rectifier
I
FAV
= 12 A
V
RRM
= 220/250 V
C
Junction
= 18 pF
Symbol Conditions Characteristic Values
typ. max.
IR TVJ = 25°C VR = V
RRM
1.3 mA
TVJ = 125°C VR = V
RRM
1.3 mA
V
F
IF = 5 A; TVJ = 125°C 1.3 V
IF = 5 A; TVJ = 25°C 1.2 1.5 V
C
J
VR = 100 V; TVJ = 125°C 18 pF
R
thJC
4.4 K/W
R
thCH
0.5 K/W
Weight 2g
© 2001 IXYS All rights reserved
2 - 2
DGS 10-022A DGSK 20-022A
DGS 10-025A DGSK 20-025A
0.0 0.5 1.0 1.5 2.0
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
0.01
0.1
1
10
t
s
K/W
0.1 1 10 100 1000
10
100
C
J
I
F
A
V
F
V
R
V
pF
V
Z
thJC
T
VJ
=
125°C
25°C
DGS10-015/018BS
T
VJ
= 125°C
200
20
Single Pulse
119
Fig. 1 typ. forward characteristics Fig. 2 typ. junction capacity
versus blocking voltage
Fig. 3 typ. thermal impedance junction to case
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium
Arsenide Schottky diodes:
conduction
forward characteristics
turn off characteristics
turn on characteristics
by majority + minority carriers
VF (IF)
extraction of excess carriers
causes temperature dependant
reverse recovery (trr, IRM, Qrr)
delayed saturation leads to V
FR
Rectifier Diode
by majority carriers only
VF (IF), see Fig. 1
reverse current charges
junction capacity CJ, see Fig. 2;
not temperature dependant
no turn on overvoltage peak
GaAs Schottky Diode
Outline (center pin only for DGSK types)
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.38 0.56 0.015 0.022
R 2.29 2.79 0.090 0.110
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