IXYS DGS10-018BS, DGS10-015BS Datasheet
© 2001 IXYS All rights reserved
1 - 2
DGS 10-015BS
DGS 10-018BS
Gallium Arsenide Schottky Rectifier
Symbol Conditions Maximum Ratings
I
FAV
TC = 25°C; DC 14 A
I
FAV
TC = 90°C; DC 10 A
I
FSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine 20 A
T
VJ
-55...+175 °C
T
stg
-55...+150 °C
P
tot
TC = 25°C34W
I
FAV
= 14 A
V
RRM
= 150/180 V
C
Junction
= 22 pF
V
RSM
V
RRM
Type
V V
15 0 15 0 DGS 10-015BS
18 0 18 0 DGS 10-018BS
Preliminary Data
119
AC
Features
●
Low forward voltage
●
Very high switching speed
●
Low junction capacity of GaAs
- low reverse current peak at turn off
●
Soft turn off
●
Temperature independent switching
behaviour
●
High temperature operation capability
●
Epoxy meets UL 94V-0
Applications
●
MHz Switched mode power supplies
(SMPs)
●
Small size SMPs
●
High frequency converters
●
Resonant converters
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, Conditions and dimensions.
Symbol Conditions Characteristic Values
typ. max.
IR TVJ = 25°C VR = V
RRM
1.3 mA
TVJ = 125°C VR = V
RRM
1.6 mA
V
F
IF = 5 A; TVJ = 125°C 1.1 V
IF = 5 A; TVJ = 25°C 1.2 1.3 V
C
J
VR = 100 V; TVJ = 125°C 22 pF
R
thJC
4.4 K/W
Weight 2g
TO-263 AB
A = Anode, C = Cathode , TAB = Cathode
A
C (TAB)
A
© 2001 IXYS All rights reserved
2 - 2
DGS 10-015BS
DGS 10-018BS
119
0.0 0.5 1.0 1.5 2.0
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
0.01
0.1
1
10
t
s
K/W
0.1 1 10 100 1000
10
100
C
J
I
F
A
V
F
V
R
V
pF
V
Z
thJC
T
VJ
=
125°C
25°C
DGS10-015/018BS
T
VJ
= 125°C
300
20
Single Pulse
Fig. 1 typ. forward characteristics Fig. 2 typ. junction capacity
versus blocking voltage
Fig. 3 typ. thermal impedance junction to case
Note:
explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium
Arsenide Schottky diodes:
conduction
forward characteristics
turn off characteristics
turn on characteristics
by majority + minority carriers
VF (IF)
extraction of excess carriers
causes temperature dependant
reverse recovery (trr, IRM, Qrr)
delayed saturation leads to V
FR
Rectifier Diode
by majority carriers only
VF (IF), see Fig. 1
reverse current charges
junction capacity CJ, see Fig. 2;
not temperature dependant
no turn on overvoltage peak
GaAs Schottky Diode
Outline TO-263 AB
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 8.00 8.89 .315 .350
E 9.65 10.29 .380 .405
E1 6.22 8.13 .245 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.20 0 .008
R 0.46 0.74 .018 .029
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