IXYS DE375-501N21A Service Manual
查询DE375-501N21A供应商
♦ N-Channel Enhancement Mode
♦ Low Q
♦ High dv/dt
♦ Nanosecond Switching
♦ 50MHz Maximum Frequency
Symbol Test Conditions Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
dv/dt
P
DC
P
DHS
P
DAMB
R
thJC
R
thJHS
Symbol Test Conditions Characteristic Values
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
T
J
T
JM
T
stg
T
L
Weight
and Rg
g
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ V
T
≤ 150°C, RG = 0.2Ω
j
IS = 0
Tc = 25°C
Derate 3.7W/°C above 25°C
Tc = 25°C
VGS = 0 V, ID = 3 ma
VDS = VGS, ID = 4 ma
VGS = ±20 VDC, VDS = 0
VDS = 0.8 V
V
= 0 TJ = 125°C
GS
VGS = 15 V, ID = 0.5I
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
VDS = 15 V, ID = 0.5I
1.6mm (0.063 in) from case for 10 s
DSS TJ
= 25°C
D25
, pulse test
D25
DSS
,
>200 V/ns
TJ = 25°C unless otherwise specified
min. typ. max.
500 V
2.5 5.5 V
±100 nA
50
0.22
17 S
-55 +175 °C
175 °C
-55 +175 °C
300 °C
3 g
DE375-501N21A
RF Power MOSFET
500 V
500 V
±20 V
±30 V
25 A
150 A
21 A
30 mJ
5 V/ns
940 W
425 W
4.5 W
0.16 C/W
0.36 C/W
1
GATE
µA
mA
Ω
V
= 500 V
DSS
I
= 25 A
D25
R
P
SG1 SG2
Features
DS(on)
DC
=
0.22 Ω
= 940 W
DRAIN
SD1 SD2
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Q
process
g
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low R
DS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other haz-
ardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to 50MHz
• Easy to mount—no insulators needed
• High power density
Symbol Test Conditions Characteristic Values
(
TJ = 25°C unless otherwise specified)
DE375-501N21A
RF Power MOSFET
R
C
C
C
C
T
T
T
T
Q
Q
Q
G
iss
oss
rss
stray
d(on)
on
d(off)
off
g(on)
gs
gd
2000 pF
VGS = 0 V, VDS = 0.8 V
f = 1 MHz
Back Metal to any Pin
VGS = 15 V, VDS = 0.8 V
ID = 0.5 IDM
R
= 0.2 Ω (External)
G
VGS = 10 V, VDS = 0.5 V
ID = 0.5 I
D25
DSS(max)
DSS
DSS
min. typ. max.
,
200 pF
0.3
45 pF
33 pF
5 ns
3 ns
5 ns
8 ns
77 nC
21 nC
40 nC
Ω
Source-Drain Diode Characteristic Values
(
TJ = 25°C unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
I
SM
V
SD
T
rr
QRM
I
RM
VGS = 0 V
Repetitive; pulse width limited by T
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2%
IF = IS, -di/dt = 100A/µs,
V
= 100V
R
JM
15 A
21 A
150 A
1.5 V
200 ns
0.6
µC
For detailed device mounting and installation instructions, see the “DE-
Series MOSFET Mounting Instructions” technical note on IXYS RF’s web
site at www.ixysrf.com/Technical_Support/App_notes.html
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508
5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715
5,381,025 5,640,045
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