IXYS CS8-08IO2, CS8-12IO2 Datasheet
CS 8
Phase Control Thyristors V
I
I
V
RSM
V
DSM
V
RRM
V
DRM
Type
12
VV
900 800 CS 8-08io2
3
1300 1200 CS 8-12io2
Symbol Test Conditions Maximum Ratings
I
T(RMS)
I
T(AV)M
I
TSM
2
I
t TVJ = 45°C t = 10 ms (50 Hz), sine 310 A2s
TVJ= T
T
VJM
= 85°C; 180° sine 16 A
case
TVJ = 45°C; t = 10 ms (50 Hz), sine 250 A
VR = 0 t = 8.3 ms (60 Hz), sine 270 A
TVJ = T
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 220 A
t = 10 ms (50 Hz), sine 200 A
25 A
VR = 0 t = 8.3 ms (60 Hz), sine 306 A2s
(di/dt)
TVJ = T
VJM
VR = 0 t = 8.3 ms (60 Hz), sine 200 A2s
cr
TVJ = T
VJM
f = 50 Hz, tP =200 ms
VD = 2/3 V
IG = 0.2 A non repetitive, IT = I
DRM
diG/dt = 0.2 A/ms
t = 10 ms (50 Hz), sine 200 A2s
repetitive, IT = 48 A 150 A/ms
T(AV)M
500 A/ms
TO-64
1 = Anode, 2 = Cathode, 3 = Gate
Features
●
●
●
●
Applications
●
●
●
Advantages
●
●
●
RRM
T(RMS)
T(AV)M
= 800-1200 V
= 25 A
= 16 A
2
3
1
M5
Thyristor for line frequencies
International standard package
JEDEC TO-64
Planar glassivated chip
Long-term stability of blocking
currents and voltages
Motor control
Power converter
AC power controller
Space and weight savings
Simple mounting
Improved temperature and power
cycling
(dv/dt)
P
GM
P
G(AV)
V
RGM
T
VJ
T
VJM
T
stg
M
d
TVJ = T
cr
RGK = ¥; method 1 (linear voltage rise)
TVJ = T
IT = I
;V
VJM
VJM
T(AV)M
tP = 30 ms10W
tP = 300 ms5W
= 2/3 V
DR
DRM
-40...+125 °C
-40...+125 °C
Mounting torque 2.5 Nm
1000 V/ms
0.5 W
10 V
125 °C
22 lb.in.
Weight 6g
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
Dimensions in mm (1 mm = 0.0394")
1 - 3
V
Symbol Test Conditions Characteristic Values
, I
I
R
D
V
T
V
T0
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
R
thJC
R
thJH
d
S
d
A
a Max. acceleration, 50 Hz 50 m/s
TVJ= T
; VR = V
VJM
RRM
; VD = V
DRM
£ 3mA
IT= 33 A; TVJ = 25°C £ 1.6 V
For power-loss calculations only (TVJ = 125°C) 1.0 V
18 mW
VD = 6 V; TVJ = 25°C £ 2.5 V
TVJ = -40°C £ 3.5 V
VD = 6 V; TVJ = 25°C £ 30 mA
TVJ = -40°C £ 50 mA
TVJ = T
;V
VJM
D
= 2/3 V
DRM
£ 0.2 V
£ 1mA
TVJ = 25°C; tP = 10 ms £ 100 mA
IG = 0.09 A; diG/dt = 0.09 A/ms
TVJ = 25°C; VD = 6 V; RGK = ¥ £ 80 mA
TVJ = 25°C; VD = 1/2 V
IG = 0.09 A; diG/dt = 0.09 A/ms
TVJ = T
VR = 100 V; dv/dt = 20 V/ms; VD = 2/3 V
; IT = 16 A, tP = 300 ms; di/dt = -20 A/ms typ. 60 ms
VJM
DRM
DRM
£ 2 ms
DC current 1.5 K/W
DC current 2.5 K/W
Creepage distance on surface 1.55 mm
Strike distance through air 1.55 mm
CS 8
2
Accessories:
Nut M5 DIN 439/SW8
Lock washer A5 DIN 128
4
V
B
C
3
G
2
1
0
0 255075
B
B
= 25°C
VJ
: T
GT
I
A
IGD: TVJ= 25°C
IGD: TVJ=125°C
= 0°C
VJ
: T
GT
I
= -40°C
VJ
: T
GT
I
I
G
mA
Fig. 1 Gate voltage and gate current
Triggering:
A = no; B = possible; C = safe
2
10
m
s
t
gd
1
10
lim.
0
10
typ.
-1
10
10
-2
10
-1
10
0
t
Fig. 2 Gate controlled delay time t
50
typ. lim.
A
40
I
T
30
20
TVJ= 125°C
TVJ= 25°C
10
1
AV
10
gd
0
0.0 0.5 1.0 1.5 2.0
V
Fig. 3 On-state characteristics
T
© 2000 IXYS All rights reserved
2 - 3
Loading...