Phase Control Thyristor
V
= 800-1600 V
RRM
I
I
= 75 A
T(RMS)
= 48 A
T(AV)M
CS 45
V
V
RSM
DSM
V
RRM
V
DRM
V Type
V
900 800 CS 45-08 io1
1300 1200 CS 45-12 io1
A
G
1700 1600 CS 45-16 io1 CS 45-16 io1R
Symbol Conditions Maximum Ratings
I
TRMS
I
T(AV)M
I
TSM
I2t
(di/dt)
TVJ = T
VJM
TC = 75°C, 180° sine
TVJ = 45°C t = 10 ms (50 Hz), sine
VR = 0 V t = 8.3 ms (60 Hz), sine
TVJ = T
t = 10 ms (50 Hz), sine
VJM
VR = 0 t = 8.3 ms (60 Hz), sine
TVJ = 45°C t = 10 ms (50 Hz), sine
VR = 0 V t = 8.3 ms (60 Hz), sine
TVJ = T
t = 10 ms (50 Hz), sine
VJM
VR = 0 V t = 8.3 ms (60 Hz), sine
TVJ = T
cr
VJM
repetitive, IT = 40 A 150 A/µs
75
48
520
560
460
500
1350
1300
1050
1030
A2s
A2s
A2s
A2s
f = 50 Hz; tp = 200 µs
VD = 2/3 V
IG = 0.3 A
DRM
non repetitive, IT = I
T(AV)M
500 A/µs
diG /dt = 0.3 A/µs
(dv/dt)
TVJ = T
cr
; VD = 2/3 V
VJM
DRM
1000 V/µs
RGK = ∞; method 1 (linear voltage rise)
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
M
d
F
C
V
ISOL
Weight
* Version io1R only Data according to IEC 60747
TVJ = T
IT = I
; tp = 30 µs
VJM
; tp = 300 µs
T(AV)M
-40 ... +140
-40 ... 125
Version io1: mounting torque M3 0.8...1.2 Nm
Version io1R: mounting force with clip 20...120 N
*
50/60 Hz, RMS, t = 1 minute, leads-to-tab
typ. 6 g
10
5
0.5
10 V
140
2500 V~
TO-247 AD
Version io1
C
C
A
G
A = Anode, C = Cathode, G = Gate
h
A (TAB)
Features
• Thyristor for line frequency
A
• International standard package
A
JEDEC TO-247
A
• Planar passivated chip
A
• Long-term stability of blocking
currents and voltages
A
• Version AR isolated and
A
UL registered E153432
• Epoxy meets UL 94V-0
Applications
• Motor control
• Power converter
• AC power controller
• Switch-mode and resonant mode
power supplies
• Light and temperature control
Advantages
• Easy to mount with 1 screw
W
(isolated mounting screw hole)
W
• Space and weight savings
W
• Simple mounting
• Improved temperature and power
cycling
°C
°C
°C
ISOPLUS247
Version io1R
C
A
G
TM
h
Isolated
back surface
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
0639
1 - 3
Symbol Conditions Characteristic Values
The convex bow of substrate is typ. < 0.04 mm over plastic surface level
of device bottom side
This drawing will meet all dimensions requirement of JEDEC outline
TO-247 AD except screw hole and except Lmax.
10 100 1000
1
10
100
1000
Ps
t
gd
I
G
1 10 100 1000 10000
0.1
1
10
I
G
V
G
mA
V
4
2
1
5
6
mA
typ.
Limit
3
min. max.
IR, I
V
T
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
D
VR = V
RRM
; VD = V
; TVJ = T
DRM
VJM
5 mA
IT = 80 A; TVJ = 25°C 1.64 V
For power-loss calculations only
T
= 125°C
VJ
VD = 6 V; TVJ = 25°C
TVJ = -40°C
VD = 6 V; TVJ = 25°C
T
VD = 2/3 V
; TVJ = T
DRM
= -40°C
VJ
VJM
0.85
11VmW
1.5
1.6
100
200
0.2
mA
mA
10VmA
tp = 10 µs; TVJ = 25°C
150 mA
IG = 0.3 A; diG /dt = 0.3 A/µs
I
H
t
gd
VD = 6 V; RGK = ∞; TVJ = 25°C 100 mA
VD = ½ V
TVJ = 25°C
DRM;
2 µs
IG = 0.3 A; diG/dt = 0.3 A/µs
R
thJC
R
thJH
a
DC current
DC current
0.62
0.82
K/W
K/W
Max. acceleration; 50 Hz 50 m/s
CS 45
V
V
Fig. 1 Gate trigger range
2
TO-247 AD
ISOPLUS 247
TM
Millimeter Inches
Dim.
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.40 6.20 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.50 - 0.177
J 1.00 1.40 0.040 0.055
K 10.80 11.00 0.426 0.433
L 4.70 5.30 0.185 0.209
M 0.40 0.80 0.016 0.031
N 1.50 2.49 0.087 0.102
Dimensions (1 mm = 0.0394")
Fig. 2 Gate controlled delay time t
gd
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
0639
2 - 3
CS 45
0 20 40 60 80 100 120 140
0
10
20
30
40
50
60
70
80
0 10 20 30 40 50 60 70
0
20
40
60
80
100
120
140
0 25 50 75 100 125 150
0.001 0.01 0.1 1
0
100
200
300
400
0.0 0.5 1.0 1.5 2.0
0
20
40
60
80
100
0.001 0.01 0.1 1 10 100
0.0
0.5
1.0
I
T
[A]
t [s]
V
T
[V]
1 2 3 4 5 6 7 8 910
1000
I2t
[A
2
s]
t [ms]
500
2000
I
TSM
[A]
TVJ = 25°C
TVJ = 125°C
TVJ = 125°C
TVJ = 45°C
50 Hz, 80% V
RRM
TVJ = 125°C
TVJ = 45°C
VR = 0 V
P
T
[W]
I
T(AV)M
[A]
T
amb
[°C]
I
T(AV)M
[A]
T
case
[°C]
DC
180° sin
120° rect
60° rect
30° rect
R
thKA
[K/W]
0.1
0.5
1
2
4
10
DC
180° sin
120° rect
60° rect
30° rect
Z
thJC
[K/W]
t [s]
30°
60°
120°
180°
DC
Fig. 3 Forward characteristics
Fig. 6 Power dissipation versus forward current and ambient temperature
Fig. 4 Surge overload current
I
TSM
: crest value, t: duration
Fig. 5 I2t versus time (1-10 s)
Fig. 7 Max. forward current at
case temperature
R
for various conduction angles d:
thJC
d R
thJC
(K/W)
DC 0.62
180° 0.71
120°
60° 0.793
0.748
30° 0.817
Fig. 8 Transient thermal impedance junction to case
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
Constants for Z
i R
calculation:
thJC
(K/W) ti (s)
thi
1 0.206 0.013
2 0.362 0.118
0639
3 - 3
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