IXYS CS29 Datasheet
ADVANCE TECHNICAL INFORMATION
CS 29
Phase Control Thyristor
ISOPLUS220
Electrically Isolated Back Surface
V
RSM
V
DSM
VV
800 800 CS 29-08io1C
1200 1200 CS 29-12io1C
Symbol Test Conditions Maximum Ratings
I
T(RMS)
I
T(AV)M
I
TSM
2
I
t TVJ = 45°C t = 10 ms (50 Hz), sine 200 A
(di/dt)
(dv/dt)
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
V
RRM
V
DRM
Type
TVJ = T
VJM
T
= 95°C; 180° sine (I
C
T
= 45°C; t = 10 ms (50 Hz), sine 200 A
VJ
VR = 0 V t = 8.3 ms (60 Hz), sine 215 A
TVJ = T
VJM
VR = 0 V t = 8.3 ms (60 Hz), sine 185 A
VR = 0 V t = 8.3 ms (60 Hz), sine 195 A2s
TVJ = T
VJM
VR = 0 V t = 8.3 ms (60 Hz), sine 145 A2s
TVJ = T
cr
VJM
f = 50 Hz, t
VD = 2/3 V
IG = 0.2 A non repetitive, IT = I
di
/dt = 0.2 A/µs
G
TVJ = T
cr
VJM
R
= ∞; method 1 (linear voltage rise)
GK
TVJ = T
VJM
IT = I
T(AV)M
50/60 Hz RMS; I
TM
A
current limit) 23 A
T(RMS)
t = 10 ms (50 Hz), sine 175 A
t = 10 ms (50 Hz), sine 155 A2s
repetitive, I
=200 µs
P
DRM
;VDR = 2/3 V
t
= 30 µs5W
P
t
= 300 µs 2.5 W
P
≤ 1 mA 2500 V~
ISOL
= 40 A 150 A/µs
T
T(AV)M
DRM
-40...+150 °C
-40...+150 °C
G
35 A
2
500 A/µs
1000 V/µs
0.5 W
10 V
150 °C
V
RRM
I
T(RMS)
I
T(AV)M
ISOPLUS220
C
* Patent pending
= 800 - 1200 V
= 35 A
= 23 A
TM
1
2
3
Isolated back surface *
Features
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
s
l
Low cathode-to-tab capacitance (15pF
typical)
l
Planar passivated chips
l
Epoxy meets UL 94V-0
l
High performance glass
passivated chip
l
Long-term stability of leakage
current and blocking voltage
Applications
l
Motor control
l
Power converter
l
AC power controller
l
Light and temperature control
l
SCR for inrush current limiting
in power supplies or AC drive
Advantages
l
Space and weight savings
l
Simple mounting
T
L
F
C
1.6mm from case; 10s 260 °C
Mounting force 11...65 / 2.4...11 N / lb
Weight 2g
See CS 29..io1 data sheet for electrical characteristic curves.
IXYS reserves the right to change limits, conditions and dimensions.
© 2001 IXYS All rights reserved
98839 (5/01)
Symbol Test Conditions Characteristic Values
IR, I
V
V
r
T
V
I
GT
V
I
GD
I
L
I
H
t
gd
D
T
T0
GT
GD
TVJ= T
IT= 45 A; T
For power-loss calculations only (T
VD = 6 V; T
VD = 6 V; T
TVJ = T
T
VJ
IG = 0.2; di
T
VJ
T
VJ
IG = 0.2 A; di
; VR = V
VJM
;V
VJM
; VD = V
RRM
= 25°C ≤ 1.5 V
VJ
= 25°C ≤ 1.0 V
VJ
T
= -40°C ≤ 1.2 V
VJ
= 25°C ≤ 65 mA
VJ
T
= -40°C ≤ 80 mA
VJ
= 2/3 V
D
DRM
DRM
= 125°C) 0.82 V
VJ
≤ 2mA
16.5 mΩ
≤ 0.2 V
≤ 5mA
= 25°C; tP = 10 µs ≤ 150 mA
/dt = 0.2 A/µs
G
= 25°C; V
= 25°C; V
= 6 V; R
D
= 1/2 V
D
/dt =0.2 A/µs
G
DRM
= ∞ ≤ 50 mA
GK
≤ 2 µs
CS 29
R
thJC
R
thCK
DC current 1.2 K/W
DC current typical 0.6 K/W
a Max. acceleration, 50 Hz 50 m/s
ISOPLUS220 OUTLINE
Note: All terminals are solder plated.
1 - Cathode
2 - Anode
3 - Gate
2
98....
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