IXYS CS19-08, CS19-12 Datasheet
© 2001 IXYS All rights reserved
IXYS reserves the right to change limits, conditions and dimensions.
Phase Control Thyristor
ISOPLUS220
TM
Electrically Isolated Back Surface
* Patent pending
ISOPLUS220
TM
3
2
Isolated back surface *
1
A
C
G
CS 19
V
RRM
= 800 - 1200 V
I
T(RMS)
= 35 A
I
T(AV)M
= 13 A
ADVANCE TECHNICAL INFORMATION
V
RSM
V
RRM
Type
V
DSM
V
DRM
VV
800 800 CS 19-08ho1C
1200 1200 CS 19-12ho1C
Symbol Test Conditions Maximum Ratings
I
T(RMS)
TVJ = T
VJM
35 A
I
T(AV)M
T
C
= 85°C; 180° sine 13 A
I
TSM
T
VJ
= 45°C; t = 10 ms (50 Hz), sine 100 A
VR = 0 V t = 8.3 ms (60 Hz), sine 105 A
TVJ = T
VJM
t = 10 ms (50 Hz), sine 85 A
VR = 0 V t = 8.3 ms (60 Hz), sine 90 A
I
2
t TVJ = 45°C t = 10 ms (50 Hz), sine 50 A
2
s
VR = 0 V t = 8.3 ms (60 Hz), sine 45 A2s
TVJ = T
VJM
t = 10 ms (50 Hz), sine 36 A2s
VR = 0 V t = 8.3 ms (60 Hz), sine 33 A2s
(di/dt)
cr
TVJ = T
VJM
repetitive, I
T
= 20 A 100 A/µs
f = 50 Hz, t
P
=200 µs
VD = 2/3 V
DRM
IG =0.08 A non repetitive, IT = I
T(AV)M
500 A/µs
di
G
/dt = 0.08 A/µs
(dv/dt)
cr
TVJ = T
VJM
;VDR = 2/3 V
DRM
500 V/µs
R
GK
= ∞; method 1 (linear voltage rise)
P
GM
TVJ = T
VJM
t
P
= 30 µs5W
IT = I
T(AV)M
t
P
= 300 µs 2.5 W
P
GAV
0.5 W
V
RGM
10 V
T
VJ
-40...+125 °C
T
VJM
125 °C
T
stg
-40...+125 °C
V
ISOL
50/60 Hz RMS; I
ISOL
≤ 1 mA 2500 V~
T
L
1.6mm from case; 10s 260 °C
F
C
Mounting force 11...65 / 2.4...11 N / lb
Weight 2g
Features
Features
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l
Low cathode-to-tab capacitance (15pF
typical)
l
Planar passivated chips
l
Epoxy meets UL 94V-0
l
High performance glass
passivated chip
l
Long-term stability of leakage
current and blocking voltage
Applications
l
Motor control
l
Power converter
l
AC power controller
l
Light and temperature control
l
SCR for inrush current limiting
in power supplies or AC drive
Advantages
l
Space and weight savings
l
Simple mounting
98789 (5/01)
CS 19
Symbol Test Conditions Characteristic Values
I
R
, I
D
TVJ= T
VJM
; VR = V
RRM
; VD = V
DRM
≤ 1mA
V
T
IT= 30 A; T
VJ
= 25°C ≤ 1.65 V
V
T0
For power-loss calculations only (T
VJ
= 125°C) 0.87 V
r
T
29 mΩ
V
GT
VD = 6 V; T
VJ
= 25°C ≤ 1.5 V
T
VJ
= -40°C ≤ 2.5 V
I
GT
VD = 6 V; T
VJ
= 25°C ≤ 25 mA
T
VJ
= -40°C ≤ 50 mA
V
GD
TVJ = T
VJM
;V
D
= 2/3 V
DRM
≤ 0.2 V
I
GD
≤ 3mA
I
L
T
VJ
= 25°C; tP = 10 µs ≤ 75 mA
IG =0.08 A; di
G
/dt =0.08 A/µs
I
H
T
VJ
= 25°C; V
D
= 6 V; R
GK
= ∞ ≤ 50 mA
t
gd
T
VJ
= 25°C; V
D
= 1/2 V
DRM
≤ 2 µs
IG = 0.08 A; di
G
/dt = 0.08 A/µs
R
thJC
DC current 1.7 K/W
R
thCK
DC current typical 0.6 K/W
a Max. acceleration, 50 Hz 50 m/s
2
ISOPLUS220 OUTLINE
Note: All terminals are solder plated.
1 - Cathode
2 - Anode
3 - Gate
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