ISSI S62WV25616ALL, IS62WV25616BLL User Manual

IS62WV25616ALL

®

IS62WV25616BLL

256K x 16 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC SRAM

FEATURES

• High-speed access time: 55ns, 70ns

• CMOS low power operation
36 mW (typical) operating
9 µW (typical) CMOS standby

• TTL compatible interface levels

• Single power supply

1.65V--2.2V V

2.5V--3.6V V

• Fully static operation: no clock or refresh
required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

DD (IS62WV25616ALL)

DD (IS62WV25616BLL)

DESCRIPTION

The ISSI IS62WV25616ALL/IS62WV25616BLL are high-
speed, low power, 4M bit SRAMs organized as 256K words
by 16 bits. It is fabricated using ISSI's high-performance
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields high­performance and low power consumption devices.

When CS1 is HIGH (deselected) or when CS1 is LOW and
both LB and UB are HIGH, the device assumes a standby
mode at which the power dissipation can be reduced down
with CMOS input levels.

Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A
data byte allows Upper Byte (UB) and Lower Byte (LB)
access.

The IS62WV25616ALL/IS62WV25616BLL are packaged in
the JEDEC standard 44-Pin TSOP (TYPE II) and 48-pin
mini BGA (6mmx8mm).

ISSI

MAY 2005

• Lead-free available

FUNCTIONAL BLOCK DIAGRAM

A0-A17

DD

V
GND

I/O0-I/O7

Lower Byte

I/O8-I/O15

Upper Byte

CS1

OE

WE

UB

LB

DECODER

I/O

DATA

CIRCUIT

CONTROL

CIRCUIT

256K x 16

MEMORY ARRAY

COLUMN I/O

Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com —

Rev. C

05/02/05

1-800-379-4774

1

IS62WV25616ALL, IS62WV25616BLL ISSI

®

PIN CONFIGURATIONS
48- ball mini BGA (6mm x 8mm)
(Package Code B)

1 2 3 4 5 6

A1

OE

UB A3

I/O10A5

A17

I/O

11

I/O12NC

A14

I/O

13

A12

NC

A8

A0

A9

A
B
C
D
E
F
G
H

LB

I/O

I/O

GND

VDD

I/O

I/O

NC

8

9

14

15

A4

A6

A7

A16

A15

A13

A10

A2

CSI I/O

I/O1I/O

I/O

3

I/O

4

I/O

5

WE

A11 NC

NC

VDD

GND

I/O

I/O

44-Pin mini TSOP (Type II)
(Package Code T)

1

A4
A3

2

A2

3

A1

4

A0

5

CS1

6

I/O0

7

I/O1

8

I/O2

9

I/O3

0

2

6

7

V

DD

GND

I/O4
I/O5
I/O6
I/O7

WE

A16
A15
A14
A13
A12

10
11
12
13
14
15
16
17
18
19
20
21
22

44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23

A5
A6
A7

OE
UB
LB

I/O15
I/O14
I/O13
I/O12
GND
V

DD

I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
A17

PIN DESCRIPTIONS

A0-A17 Address Inputs
I/O0-I/O15 Data Inputs/Outputs

CS1 Chip Enable Input
OE Output Enable Input
WE Write Enable Input
LB Lower-byte Control (I/O0-I/O7)
UB Upper-byte Control (I/O8-I/O15)

N C No Connection
VDD Power
GND Ground

2

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. C

05/02/05

IS62WV25616ALL, IS62WV25616BLL ISSI

TRUTH TABLE

I/O PIN

Mode

WEWE

WE

WEWE

Not Selected X H X X X High-Z High-Z I

Output Disabled H L H L X High-Z High-Z ICC

Read H L L L H DOUT High-Z ICC

Write L L X L H DIN High-Z ICC

CS1CS1

CS1

CS1CS1

OEOE

OE

OEOE

LBLB

LB

LBLB

UBUB

UB I/O0-I/O7 I/O8-I/O15 VDD Current

UBUB

SB1, ISB2

XXXHH High-Z High-Z ISB1, ISB2

H L H X L High-Z High-Z ICC

H L L H L High-Z DOUT
HLLLL DOUT DOUT

L L X H L High-Z DIN
LLXLL DIN DIN

®

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol Parameter Value Unit

VTERM Terminal Voltage with Respect to GND –0.2 to VDD+0.3 V
VDD VDD Related to GND –0.2 to VDD+0.3 V
TSTG Storage Temperature –65 to +150 ° C
PT Power Dissipation 1.0 W

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.

OPERATING RANGE (VDD)

Range Ambient Temperature IS62WV25616ALL IS62WV25616BLL

Commercial 0°C to +70°C 1.65V - 2.2V 2.5V-3.6V
Industrial –40°C to +85°C 1.65V - 2.2V 2.5V-3.6V

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter Test Conditions VDD Min. Max. Unit

VOH Output HIGH Voltage IOH = -0.1 mA 1.65-2.2V 1.4 — V

IOH = -1 mA 2.5-3.6V 2.2 — V

VOL Output LOW Voltage IOL = 0.1 mA 1.65-2.2V — 0.2 V

IOL = 2.1 mA 2.5-3.6V — 0.4 V

VIH Input HIGH Voltage 1.65-2.2V 1.4 VDD + 0.2 V

2.5-3.6V 2.2 VDD + 0.3 V

(1)

VIL

Input LOW Voltage 1.65-2.2V –0.2 0.4 V

2.5-3.6V –0.2 0. 6 V
ILI Input Leakage GND ≤ VIN ≤ VDD –1 1 µA
ILO Output Leakage GND ≤ VOUT ≤ VDD, Outputs Disabled – 1 1 µA

Notes: 1. VIL (min.) = –1.0V for pulse width less than 10 ns.

Integrated Silicon Solution, Inc. — www.issi.com —

Rev. C

05/02/05

1-800-379-4774

3

IS62WV25616ALL, IS62WV25616BLL ISSI

®

IS62WV25616ALL, POWER SUPPLY CHARACTERISTICS

(1)

(Over Operating Range)

Symbol Parameter Test Conditions Max. Unit

70

ICC VDD Dynamic Operating VDD = Max., Com. 25 mA

Supply Current IOUT = 0 mA, f = fMAX Ind. 30

ICC1 Operating Supply VDD = Max., CS1 = 0.2V Com. 10 m A

Current WE = VDD-0.2V Ind. 1 0

f=1MHZ

ISB1 TTL Standby Current VDD = Max., Com . 0.35 m A

(TTL Inputs) VIN = VIH or VIL Ind. 0.35

CS1 = VIH , f = 1 MHZ

ULB Control

VDD = Max., VIN = VIH or VIL

OR

CS1 = VIL, f = 0, UB = VIH, LB = VIH

ISB2 CMOS Standby VDD = Max., Com. 1 5 µ A

Current (CMOS Inputs) CS1 ≥ VDD – 0.2V, In d. 1 5

VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0

OR

ULB Control VDD = Max., CS1 = VIL,

VIN ≤ 0.2V, f = 0; UB / LB = VDD – 0.2V

IS62WV25616BLL, POWER SUPPLY CHARACTERISTICS

(1)

(Over Operating Range)

Symbol Parameter Test Conditions Max. Max. Unit

55 70

ICC VDD Dynamic Operating VDD = Max., Com. 40 35 mA

Supply Current IOUT = 0 mA, f = fMAX Ind. 45 40

ICC1 Operating Supply VDD = Max., CS1 = 0.2V Com. 15 15 m A

Current WE = VDD-0.2V Ind. 15 15

f=1MHZ

ISB1 TTL Standby Current VDD = Max., Com. 0.35 0.35 m A

(TTL Inputs) VIN = VIH or VIL Ind. 0.35 0.35

CS1 = VIH, f = 1 MHZ

OR

ULB Control

VDD = Max., VIN = VIH or VIL
CS1 = VIL, f = 0, UB = VIH, LB = VIH

ISB2 CMOS Standby VDD = Max., C om. 15 15 µ A

Current (CMOS Inputs) CS1 ≥ VDD – 0.2V, Ind. 15 15

VIN ≥ VDD – 0.2V, or
VIN ≤ 0.2V, f = 0

OR

ULB Control VDD = Max., CS1 = VIL,

VIN ≤ 0.2V, f = 0; UB / LB = VDD – 0.2V

4

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. C

05/02/05

IS62WV25616ALL, IS62WV25616BLL ISSI

®

CAPACITANCE

(1)

Symbol Parameter Conditions Max. Unit

CIN Input Capacitance VIN = 0V 8 pF
COUT Input/Output Capacitance VOUT = 0V 10 pF

Note:

1. Tested initially and after any design or process changes that may affect these parameters.

AC TEST CONDITIONS

IS62WV25616ALL IS62WV25616BLL

Parameter (Unit) (Unit)

Input Pulse Level 0.4V to VDD-0.2V 0.4V to VDD-0.3V
Input Rise and Fall Times 5 ns 5ns
Input and Output Timing VREF VREF

and Reference Level
Output Load See Figures 1 and 2 See Figures 1 and 2

IS62WV25616ALL IS62WV25616BLL

1.65V-2.2V 2.5V - 3.6V

Ω)Ω)

R1(

Ω) 3070 3070

Ω)Ω)
Ω)Ω)

R2(

Ω) 3150 3150

Ω)Ω)

VREF 0.9V 1.5V
VTM 1.8V 2.8V

AC TEST LOADS

R1

VTM

OUTPUT

30 pF

Including

jig and

scope

R2

VTM

OUTPUT

5 pF

Including

jig and

scope

R1

R2

Figure 1 Figure 2

Integrated Silicon Solution, Inc. — www.issi.com —

Rev. C

05/02/05

1-800-379-4774

5