ISSI IS62LV256-70UI, IS62LV256-70U, IS62LV256-45UI, IS62LV256-45U, IS62LV256-45TI Datasheet

Integrated Silicon Solution, Inc. — 1-800-379-4774

1

Rev. I

01/26/00

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.

IS62LV256 ISSI

®

FEATURES

• Access time: 45, 70 ns

• Low active power: 70 mW

• Low standby power
— 45 µW CMOS standby

• Fully static operation: no clock or refresh
required

• TTL compatible inputs and outputs

• Single 3.3V power supply

DESCRIPTION

The ISSI IS62LV256 is a very high-speed, low power,
32,768-word by 8-bit static RAM. It is fabricated using ISSI's
high-performance CMOS double-metal technology.

When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation is reduced to
10 µW (typical) with CMOS input levels.

Easy memory expansion is provided by using an active LOW
Chip Enable (CE) input and an active LOW Output Enable
(OE) input. The active LOW Write Enable (WE) controls both
writing and reading of the memory.

The IS62LV256 is pin compatible with other 32K x 8 SRAMs
in 300-mil plastic DIP and SOJ, 330-mil plastic SOP, and
TSOP (Type I) packages.

32K x 8 LOW VOLTAGE STATIC RAM JANUARY 2000

FUNCTIONAL BLOCK DIAGRAM

A0-A14

CE
OE

WE

256 X 1024

MEMORY ARRAY

DECODER

COLUMN I/O

CONTROL

CIRCUIT

GND

VCC

I/O

DATA

CIRCUIT

I/O0-I/O7

2

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. I

01/26/00

IS62LV256 ISSI

®

PIN CONFIGURATION

28-Pin DIP, SOJ and SOP

PIN CONFIGURATION

28-Pin TSOP (Type I)

PIN DESCRIPTIONS

A0-A14 Address Inputs

CE Chip Enable Input
OE Output Enable Input
WE Write Enable Input

I/O0-I/O7 Input/Output
Vcc Power
GND Ground

TRUTH TABLE

Mode WE CE OE

I/O Operation Vcc Current

Not Selected

X H X High-Z ISB1, ISB2

(Power-down)
Output Disabled

H L H High-Z ICC1, ICC2
Read H L L DOUT ICC1, ICC2
Write L L X DIN ICC1, ICC2

22
23
24
25
26
27
28
1
2
3
4
5
6
7

21
20
19
18
17
16
15
14
13
12
11
10

9
8

OE

A11

A9
A8

A13

WE

VCC

A14
A12

A7
A6
A5
A4
A3

A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol Parameter Value Unit

VTERM Terminal Voltage with Respect to GND –0.5 to +4.6 V
TBIAS Temperature Under Bias –55 to +125 °C
TSTG Storage Temperature –65 to +150 °C
PT Power Dissipation 0.5 W
IOUT DC Output Current (LOW) 20 mA

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.

1
2
3
4
5
6
7
8
9
10
11
12
13
14

28
27
26
25
24
23
22
21
20
19
18
17
16
15

A14
A12

A7
A6
A5
A4
A3
A2
A1

A0
I/O0
I/O1
I/O2

GND

VCC
WE
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3

Integrated Silicon Solution, Inc. — 1-800-379-4774

3

Rev. I

01/26/00

IS62LV256 ISSI

®

OPERATING RANGE

Range Ambient Temperature VCC

Commercial 0°C to +70°C 3.3V ± 5%
Industrial –40°C to +85°C 3.3V ± 5%

POWER SUPPLY CHARACTERISTICS

(1)

(Over Operating Range)

-45 ns -70 ns

Symbol Parameter Test Conditions Min. Max. Min. Max. Unit

ICC1 Vcc Operating VCC = Max., CE = VIL Com. — 20 — 20 mA

Supply Current IOUT = 0 mA, f = 0 Ind. — 30 — 30

ICC2 Vcc Dynamic Operating VCC = Max., CE = VIL Com. — 35 — 30 mA

Supply Current IOUT = 0 mA, f = fMAX Ind. — 45 — 40

ISB1 TTL Standby Current VCC = Max., Com. — 2 — 2mA

(TTL Inputs) VIN = VIH or VIL Ind. — 5 — 5

CE ≥ VIH, f = 0

ISB2 CMOS Standby VCC = Max., Com. — 90 — 90 µA

Current (CMOS Inputs) CE ≥ VCC – 0.2V, Ind. — 200 — 200

VIN ≥ VCC – 0.2V, or
VIN ≤ 0.2V, f = 0

Notes:

1. At f = f

MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter Test Conditions Min. Max. Unit

VOH Output HIGH Voltage VCC = Min., IOH = –1.0 mA 2.4 — V
VOL Output LOW Voltage VCC = Min., IOL = 2.1 mA — 0.4 V
VIH Input HIGH Voltage 2.2 VCC + 0.3 V
VIL Input LOW Voltage

(1)

–0.3 0.8 V

I

LI Input Leakage GND ≤ VIN ≤ VCC Com. –22µA

Ind. –55

ILO Output Leakage GND ≤ VOUT ≤ VCC, Outputs Disabled Com. –22µA

Ind. –55

Notes:

1. VIL = –3.0V for pulse width less than 10 ns.

2. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.