ISSI IS62LV25616LL-70TI, IS62LV25616LL-70T, IS62LV25616LL-70MI, IS62LV25616LL-70B, IS62LV25616LL-85TI Datasheet
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IS62LV25616LL ISSI
®
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. A
05/04/01
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
256K x 16 LOW VOLTAGE, ULTRA
LOW POWER CMOS STATIC RAM
FEATURES
• High-speed access time: 70 and 85 ns
• CMOS low power operation
– 135 mW (typical) operating
– 16.5 µW (typical) CMOS standby
• TTL compatible interface levels
•
Single 2.7V (min) to 3.15V (max) VCC power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Available in the 44-pin TSOP (Type II) and
48-pin mini BGA
(8mm x 10mm and 7.2mm x 8.7mm)
DESCRIPTION
The
ISSI
IS62LV25616LL is high-speed, 4,194,304 bit
static RAM organized as 262,144 words by 16 bits. It is
fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-performance
and low power consumption devices.
When CE is HIGH (deselected) or when CE is low and both LB and
UB are HIGH, the device assumes a standby mode at which the
power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs, CE and OE. The active LOW Write Enable
(WE) controls both writing and reading of the memory. A data byte
allows Upper Byte (UB) and Lower Byte (LB) access.
The IS62LV25616LL is packaged in the JEDEC standard
44-pin TSOP (Type II) and 48-pin mini BGA (8mm x 10mm
and 7.2mm x 8.7mm).
FUNCTIONAL BLOCK DIAGRAM
MAY 2001
A0-A17
CE
OE
WE
256K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
UB
LB
IS62LV25616LL ISSI
®
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
05/04/01
PIN CONFIGURATIONS
44-Pin TSOP (Type II) 48-Pin mini BGA
(8mm x 10mm and 7.2mm x 8.7mm)
TRUTH TABLE
I/O PIN
Mode WE CE OE LB UB I/O0-I/O7 I/O8-I/O15 Vcc Current
Not Selected X H X X X High-Z High-Z ISB1, ISB2
X L X H H High-Z High-Z ISB1, ISB2
X L X H H High-Z High-Z ISB1, ISB2
Output Disabled H L H X X High-Z High-Z ICC
Read H L L L H DOUT High-Z ICC
H L L H L High-Z DOUT
HLLLL DOUT DOUT
Write L L X L H DIN High-Z ICC
L L X H L High-Z DIN
LLXLL DIN DIN
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
A17
PIN DESCRIPTIONS
A0-A17 Address Inputs
I/O0-I/O15 Data Inputs/Outputs
CE Chip Enable Input
OE Output Enable Input
WE Write Enable Input
LB Lower-byte Control (I/O0-I/O7)
UB Upper-byte Control (I/O8-I/O15)
NC No Connection
Vcc Power
GND Ground
1 2 3 4 5 6
A
B
C
D
E
F
G
H
LB
OE
A0
A1
A2
N/C
I/O
8
UB A3
A4
CE I/O
0
I/O
9
I/O10A5
A6
I/O1I/O
2
GND
I/O
11
A17
A7
I/O
3
Vcc
Vcc
I/O
12
NC
A16
I/O
4
GND
I/O
14
I/O
13
A14
A15
I/O
5
I/O
6
I/O
15
NC
A12
A13
WE
I/O
7
NC
A8
A9
A10
A11 NC
IS62LV25616LL ISSI
®
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Integrated Silicon Solution, Inc. — 1-800-379-4774
3
Rev. A
05/04/01
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VCC = 3.0V, IOH = –1 mA 2.2 — V
VOL Output LOW Voltage VCC = 3.0V, IOL = 2.1 mA — 0.4 V
VIH Input HIGH Voltage 2.2 VCC + 0.2 V
VIL
(1)
Input LOW Voltage –0.2 0.4 V
ILI Input Leakage GND ≤ VIN ≤ VCC –11µA
ILO Output Leakage GND ≤ VOUT ≤ VCC, Outputs Disabled –11µA
Notes:
1. V
IL (min.) = –2.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
VTERM Terminal Voltage with Respect to GND –0.5 to Vcc+0.3 V
TBIAS Temperature Under Bias –40 to +85 °C
VCC Vcc Related to GND –0.3 to +3.3 V
TSTG Storage Temperature –65 to +150 °C
PT Power Dissipation 1.0 W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
OPERATING RANGE
Range Ambient Temperature VCC Min. VCC Max.
Commercial 0°C to +70°C 2.7V 3.15V
Industrial –40°C to +85°C 2.7V 3.15V
CAPACITANCE
(1)
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 6 pF
COUT Input/Output Capacitance VOUT = 0V 8 pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
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