ISSI IS62LV1288LL-70TI, IS62LV1288LL-70Q, IS62LV1288LL-70HI, IS62LV1288LL-70H, IS62LV1288LL-55TI Datasheet
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IS62LV1288LL ISSI
A0-A16
CE1
OE
WE
512 X 2048
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
CE2
128K x 8 LOW POWER and LOW Vcc
®
CMOS STATIC RAM
FEATURES
• Access times of 45, 55, and 70 ns
• Low active power: 60 mW (typical)
• Low standby power: 15 µW (typical) CMOS
standby
• Low data retention voltage: 2V (min.)
• Ultra Low Power
• Output Enable (OE) and two Chip Enable
(CE1 and CE2) inputs for ease in applications
• TTL compatible inputs and outputs
• Single 2.5V
• Industrial temperature available
• Available in 32-pin TSOP (Type I), 32-pin
STSOP, and 450-mil SOP
(min.)
to 3.45V
(max.)
power supply
FEBUARY 2001
DESCRIPTION
The ISSI IS62LV1288LL is a low power and low
Vcc,131,072-word by 8-bit CMOS static RAM. It is
fabricated using ISSI's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields higher
performance and low power consumption devices.
When CE1 is HIGH or CE2 is LOW (deselected), the
device assumes a standby mode at which the power
dissipation can be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip
Enable inputs, CE1 and CE2. The active LOW Write Enable
(WE) controls both writing and reading of the memory.
The IS62LV1288LL is available in 32-pin TSOP (Type I),
STSOP (8 x 13.4mm), and 450-mil plastic SOP (525-mil
pin to pin) packages.
FUNCTIONAL BLOCK DIAGRAM
This document contISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no
responsibility for any errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/22/01
1
IS62LV1288LL ISSI
®
PIN CONFIGURATION
32-Pin SOP (Q)
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
PIN CONFIGURATION
32-Pin TSOP (Type I) (T) and STSOP (Type 1) (H)
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
PIN DESCRIPTIONS
A0-A16 Address Inputs
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
OE Output Enable Input
WE Write Enable Input
I/O0-I/O7 Input/Output
NC No Connection
Vcc Power
GND Ground
OPERATING RANGE
Range Ambient Temperature Speed VCC MIN.VCC MAX.
Commercial 0°C to +70°C -45 ns 2.85V 3.15V
-55 ns 2.5V 3.45V
-70 ns 2.5V 3.45V
Industrial –40°C to +85°C -45 ns 2.85V 3.15V
-55 ns 2.5V 3.45V
-70 ns 2.5V 3.45V
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/22/01
IS62LV1288LL ISSI
TRUTH TABLE
Mode WE CE1 CE2 OE I/O Operation Vcc Current
®
Not Selected X H X X High-Z I
SB1, ISB2
(Power-down) X X L X High-Z ISB1, ISB2
Output Disabled H L H H High-Z ICC
Read H L H L DOUT ICC
Write L L H X DIN ICC
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
VTERM Terminal Voltage with Respect to GND –0.5 to Vcc + 0.5 V
VCC Vcc related to GND –0.3 to +3.6 V
TBIAS Temperature Under Bias –40 to +85 °C
TSTG Storage Temperature –65 to +150 °C
PT Power Dissipation 0.7 W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
CAPACITANCE
(1,2)
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 6 pF
COUT Output Capacitance VOUT = 0V 8 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A = 25°C, f = 1 MHz, Vcc = 3.0V.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
03/22/01
3
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