ISSI IS62LV12816BLL-55T, IS62LV12816BLL-55BI, IS62LV12816BLL-55B, IS62LV12816BLL-10TI, IS62LV12816BLL-10T Datasheet

IS62LV12816BLL ISSI

128K x 16 LOW VOLTAGE, ULTRA

®

LOW POWER CMOS STATIC RAM

FEATURES

• High-speed access time: 55, 70, 100 ns

• CMOS low power operation
– 120 mW (typical) operating
– 6 µW (typical) CMOS standby

• TTL compatible interface levels

• Single 2.7V-3.45V V

CC power supply

• Fully static operation: no clock or refresh
required

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• Available in the 44-pin TSOP (Type II) and
48-pin mini BGA (6mm x 8mm)

FUNCTIONAL BLOCK DIAGRAM

DESCRIPTION

The
static RAM organized as 131,072 words by 16 bits. It is
fabricated using
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-performance
and low power consumption devices.

When CE is HIGH (deselected) or when CE is low and
both LB and UB are HIGH, the device assumes a standby
mode at which the power dissipation can be reduced down
with CMOS input levels.

Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.

The IS62LV12816BLL is packaged in the JEDEC standard
44-pin TSOP (Type II) and 48-pin mini BGA (6mm x 8mm).

FEBRUARY 2001

ISSI

IS62LV12816BLL is a high-speed, 2,097,152-bit

ISSI

's high-performance CMOS

A0-A16

VCC

GND

I/O0-I/O7

Lower Byte

I/O8-I/O15

Upper Byte

CE
OE

WE

UB

LB

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.

DECODER

I/O

DATA

CIRCUIT

CONTROL

CIRCUIT

128K x 16

MEMORY ARRAY

COLUMN I/O

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. B

03/07/01

1

IS62LV12816BLL ISSI

PIN CONFIGURATIONS

44-Pin TSOP (Type II) 48-Pin mini BGA

®

1

A4

2

A3

3

A2

4

A1

5

A0

6

CE

Vcc

WE

7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22

I/O0
I/O1
I/O2
I/O3

GND

I/O4
I/O5
I/O6
I/O7

A16
A15
A14
A13
A12

PIN DESCRIPTIONS

44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23

A5
A6
A7

OE
UB
LB

I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
NC

1 2 3 4 5 6

A1

OE

UB A3

I/O10A5

I/O

11

I/O

12

I/O

13

NC

A8

A0

NC

NC

A14

A12

A9

A

B

C

D

E

F

G

H

LB

I/O

I/O

GND

Vcc

I/O

I/O

NC

8

9

14

15

A6

A7

A16

A15

A13

A10

A4

A2

N/C

CE I/O

I/O1I/O

I/O

3

I/O

GND

4

I/O

I/O

5

WE

I/O

A11 NC

0

2

Vcc

6

7

A0-A16 Address Inputs

I/O0-I/O15 Data Inputs/Outputs

CE Chip Enable Input
OE Output Enable Input
WE Write Enable Input

LB Lower-byte Control (I/O0-I/O7)
UB Upper-byte Control (I/O8-I/O15)

NC No Connection

Vcc Power

GND Ground

TRUTH TABLE

I/O PIN

Mode WE CE OE LB UB I/O0-I/O7 I/O8-I/O15 Vcc Current

Not Selected X H X X X High-Z High-Z ISB1, ISB2

X L X H H High-Z High-Z ISB1, ISB2

Output Disabled H L H X X High-Z High-Z ICC

X L X H H High-Z High-Z ISB

Read H L L L H DOUT High-Z ICC

H L L H L High-Z DOUT
HLLLL DOUT DOUT

Write L L X L H DIN High-Z ICC

L L X H L High-Z DIN
LLXLL DIN DIN

2

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. B

03/07/01

IS62LV12816BLL ISSI

OPERATING RANGE

Range Ambient Temperature VCC

Commercial 0°C to +70°C 2.7V - 3.45V

Industrial –40°C to +85°C 2.7V - 3.45V

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

VTERM Terminal Voltage with Respect to GND –0.5 to Vcc+0.5 V

TBIAS Temperature Under Bias –40 to +85 °C

VCC Vcc Related to GND –0.3 to +3.6 V

TSTG Storage Temperature –65 to +150 °C

PT Power Dissipation 1.0 W

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the

device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.

(1)

®

1

2

3

4

5

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter Test Conditions Min. Max. Unit

VOH Output HIGH Voltage VCC = Min., IOH = –1 mA 2.0 — V

VOL Output LOW Voltage VCC = Min., IOL = 2.1 mA — 0.4 V

VIH Input HIGH Voltage 2.2 VCC + 0.2 V

(1)

VIL

ILI Input Leakage GND ≤ VIN ≤ VCC –11µA

ILO Output Leakage GND ≤ VOUT ≤ VCC, Outputs Disabled –11µA

Notes:

1. V

CAPACITANCE

Symbol Parameter Conditions Max. Unit

Input LOW Voltage –0.2 0.4 V

IL (min.) = –2.0V for pulse width less than 10 ns.

(1)

6

7

8

9

10

11

CIN Input Capacitance VIN = 0V 6 pF

COUT Input/Output Capacitance VOUT = 0V 8 pF

Note:

1. Tested initially and after any design or process changes that may affect these parameters.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. B

03/07/01

12

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