ISSI IS62C256-70TI, IS62C256-45UI, IS62C256-45U, IS62C256-45TI, IS62C256-45T Datasheet
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®
IS62C256
32K x 8 LOW POWER CMOS STATIC RAM
FEATURES
• Access time: 45, 70 ns
• Low active power: 200 mW (typical)
• Low standby power
— 250 µW (typical) CMOS standby
— 28 mW (typical) TTL standby
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 5V power supply
DESCRIPTION
The ISSI IS62C256 is a low power, 32,768 word by 8-bit
CMOS static RAM. It is fabricated using ISSI's highperformance, low power CMOS technology.
When CS is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down to
250 µW (typical) at CMOS input levels.
Easy memory expansion is provided by using an active LOW
Chip Select (CS) input and an active LOW Output Enable (OE)
input. The active LOW Write Enable (WE) controls both writing
and reading of the memory.
The IS62C256 is pin compatible with other 32K x 8 SRAMs in
plastic SOP or TSOP (Type I) package.
ISSI
FUNCTIONAL BLOCK DIAGRAM
A0-A14
VCC
GND
I/O0-I/O7
CS
OE
WE
DECODER
I/O
DATA
CIRCUIT
CONTROL
CIRCUIT
32K X 8
MEMORY ARRAY
COLUMN I/O
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR072-1E
05/12/99
1
IS62C256
®
ISSI
PIN CONFIGURATION
28-Pin SOP
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
PIN DESCRIPTIONS
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
A13
A8
A9
A11
OE
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
PIN CONFIGURATION
28-Pin TSOP
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
TRUTH TABLE
22
23
24
25
26
27
28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
14
13
12
11
10
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
9
A1
8
A2
A0-A14 Address Inputs
CS
OE
Chip Select Input
Output Enable Input
Mode
WEWE
WE
WEWE
Not Selected X H X High-Z ISB1, ISB2
(Power-down)
CSCS
CS
CSCS
OEOE
OE
OEOE
Output Disabled H L H High-Z ICC1, ICC2
WE
I/O0-I/O7 Input/Output
Write Enable Input
Read H L L DOUT ICC1, ICC2
Write L L X DIN ICC1, ICC2
Vcc Power
GND Ground
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
VTERM Terminal Voltage with Respect to GND –0.5 to +7.0 V
TBIAS Temperature Under Bias –55 to +125 °C
TSTG Storage Temperature –65 to +150 °C
PT Power Dissipation 0.5 W
IOUT DC Output Current (LOW) 20 mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
I/O Operation Vcc Current
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR072-1E
05/12/99
IS62C256
ISSI
OPERATING RANGE
Range Ambient Temperature VCC
Commercial 0°C to +70°C 5V ± 10%
Industrial –40°C to +85°C 5V ± 10%
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VCC = Min., IOH = –1.0 mA 2.4 — V
VOL Output LOW Voltage VCC = Min., IOL = 2.1 mA — 0.4 V
VIH Input HIGH Voltage 2.2 VCC + 0.5 V
VIL Input LOW Voltage
ILI Input Leakage GND ≤ VIN ≤ VCC Com. –2 2 µA
ILO Output Leakage GND ≤ VOUT ≤ VCC, Com. –2 2 µA
Note:
1. VIL = –3.0V for pulse width less than 10 ns.
(1)
Ind. –10 10
Outputs Disabled Ind. –10 10
–0.3 0.8 V
®
POWER SUPPLY CHARACTERISTICS
Symbol Parameter Test Conditions Min. Max. Min. Max. Unit
ICC1 Vcc Operating VCC = Max., CS = VIL Com. — 60 — 60 mA
Supply Current IOUT = 0 mA, f = 0 Ind. — 70 — 70
ICC2 Vcc Dynamic Operating VCC = Max., CS = VIL Com. — 70 — 65 mA
Supply Current IOUT = 0 mA, f = fMAX Ind. — 80 — 75
ISB1 TTL Standby Current VCC = Max., Com. — 5 — 5 mA
(TTL Inputs) VIN = VIH or VIL Ind. — 10 — 10
CS
ISB2 CMOS Standby VCC = Max., Com. — 0.5 — 0.5 mA
Current (CMOS Inputs)
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
CAPACITANCE
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 8 pF
COUT Output Capacitance VOUT = 0V 10 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
(1,2)
A = 25°C, f = 1 MHz, Vcc = 5.0V.
CS
VIN ≥ VCC – 0.2V, or
VIN ≤ 0.2V, f = 0
(1)
(Over Operating Range)
-45 ns -70 ns
≥ VIH, f = 0
≥ VCC – 0.2V, Ind. — 1.0 — 1.0
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR072-1E
05/12/99
3
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