ISSI IS62C1024-70T, IS62C1024-70QI, IS62C1024-70Q, IS62C1024-55TI, IS62C1024-55T Datasheet
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IS62C1024 ISSI
128K x 8 HIGH-SPEED CMOS STATIC RAM JANUARY 2000
®
FEATURES
• High-speed access time: 35, 45, 55, 70 ns
• Low active power: 450 mW (typical)
• Low standby power: 500 µW (typical) CMOS
standby
• Output Enable (OE) and two Chip Enable
(CE1 and CE2) inputs for ease in applications
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 5V (±10%) power supply
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ISSI IS62C1024 is a low power,131,072-word by
8-bit CMOS static RAM. It is fabricated using ISSI's
high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design techniques,
yields higher performance and low power consumption
devices.
When CE1 is HIGH or CE2 is LOW (deselected), the
device assumes a standby mode at which the power
dissipation can be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip
Enable inputs, CE1 and CE2. The active LOW Write
Enable (WE) controls both writing and reading of the
memory.
The IS62C1024 is available in 32-pin 525-mil plastic SOP
and TSOP (type 1) packages.
A0-A16
VCC
GND
I/O0-I/O7
CE1
CE2
OE
WE
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
DECODER
I/O
DATA
CIRCUIT
CONTROL
CIRCUIT
512 X 2048
MEMORY ARRAY
COLUMN I/O
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. G
01/14/00
1
IS62C1024 ISSI
PIN CONFIGURATION
32-Pin SOP 32-Pin TSOP (Type 1)
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
62C1024
7
8
9
10
11
12
13
14
15
16
ISSI
®
PIN DESCRIPTIONS
A0-A16 Address Inputs
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
OE Output Enable Input
WE Write Enable Input
I/O0-I/O7 Input/Output
Vcc Power
GND Ground
OPERATING RANGE
Range Ambient Temperature VCC
Commercial 0°C to +70°C 5V ± 10%
Industrial –40°C to +85°C 5V ± 10%
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. G
01/14/00
IS62C1024 ISSI
TRUTH TABLE
Mode WE CE1 CE2 OE I/O Operation Vcc Current
®
Not Selected X H X X High-Z I
SB1, ISB2
(Power-down) X X L X High-Z ISB1, ISB2
Output Disabled H L H H High-Z ICC
Read H L H L DOUT ICC
Write L L H X DIN ICC
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
VTERM Terminal Voltage with Respect to GND –0.5 to +7.0 V
TBIAS Temperature Under Bias –10 to +85 °C
TSTG Storage Temperature –65 to +150 °C
PT Power Dissipation 1.5 W
IOUT DC Output Current (LOW) 20 mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
CAPACITANCE
(1,2)
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 6 pF
COUT Output Capacitance VOUT = 0V 8 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A = 25°C, f = 1 MHz, Vcc = 5.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VCC = Min., IOH = –1.0 mA 2.4 — V
VOL Output LOW Voltage VCC = Min., IOL = 2.1 mA — 0.4 V
VIH Input HIGH Voltage 2.2 VCC + 0.5 V
VIL Input LOW Voltage
ILI Input Leakage GND ≤ VIN ≤ VCC Com. –55µA
ILO Output Leakage GND ≤ VOUT ≤ VCC Com. –55µA
(1)
–0.3 0.8 V
Ind. –10 10
Ind. –10 10
Notes:
IL = –3.0V for pulse width less than 10 ns.
1. V
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. G
01/14/00
3
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