IS61SP25616
IS61SP25618 ISSI
256K x 16, 256K x 18 SYNCHRONOUS
®
PIPELINED STATIC RAM
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Pentium™ or linear burst sequence control using
MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Common data inputs and data outputs
• JEDEC 100-Pin TQFP and
119-pin PBGA package
• Single +3.3V, +10%, -5% power supply
• Power-down snooze mode
APRIL 2001
DESCRIPTION
The ISSI IS61SP25616 and IS61SP25618 is a high-speed
synchronous static RAM designed to provide a burstable,
high-performance memory for high speed networking and
communication applications. It is organized as 262,144
words by 16 bits and 18 bits, fabricated with ISSI 's
advanced CMOS technology. The device integrates a 2-bit
burst counter, high-speed SRAM core, and high-drive
capability outputs into a single monolithic circuit. All
synchronous inputs pass through registers controlled by
a positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be from
one to four bytes wide as controlled by the write control
inputs.
Separate byte enables allow individual bytes to be written.
BW1 controls DQ1-8, BW2 controls DQ9-16, conditioned
by BWE being LOW. A LOW on GW input would cause all
bytes to be written.
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the ADV (burst address
advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
FAST ACCESS TIME
Symbol Parameter -166 -150 -133 -5 Units
tKQ Clock Access Time 3.5 3.8 4 5 ns
tKC Cycle Time 6 6.7 7.5 10 ns
Frequency 166 150 133 100 MHz
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
1
IS61SP25616
IS61SP25618 ISSI
BLOCK DIAGRAM
MODE
ADV
CLK
ADSC
ADSP
CLK2
BURST
COUNTER
CLR
2 18
256K x 16/256K x 18
MEMORY ARRAY
®
A2-A17
A1
A0
BWE
BW1
BW2
GW
ADDRESS
REGISTER
BW1
BYTE WRITE
REGISTER
BW2
BYTE WRITE
REGISTER
CLK2
2
18
CLK
16
CLK
16 or 18
2
DATA
INPUT
REGISTER
16 or 18
DATA
OUTPUT
REGISTER
CE1
CE2
CE2
OE
ENABLE
REGISTER
ENABLE
REGISTER
DQ1 - DQ16
or
DQ1 - DQ18
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
IS61SP25616
IS61SP25618 ISSI
PIN CONFIGURATION
119-pin PBGA (Top View) 100-Pin TQFP
®
1 2 3 4 5 6 7
A
VCCQ
B
NC
C
NC
D
DQ9
E
NC
F
VCCQ
G
NC
H
DQ12
J
VCCQ
K
NC
L
DQ14
M
VCCQ
N
DQ16
P
NC
R
NC
T
NC
U
VCCQ
A6
CE2
A7
NC
DQ10
NC
DQ11
NC
VCC
DQ13
NC
DQ15
NC
NC
A5
A11
NC
A4
A3
A2
GND
GND
GND
BW2
GND
NC
GND
GND
GND
GND
GND
MODE
A10
NC
ADSP
ADSC
VCC
NC
CE
OE
ADV
GW
VCC
CLK
NC
BWE
A1
A0
VCC
NC
NC
A8
A9
A12
GND
GND
GND
GND
GND
NC
GND
BW1
GND
GND
GND
NC
A14
NC
A16
CE2
A15
NC
NC
DQ7
NC
DQ5
VCC
NC
DQ3
NC
DQ2
NC
A13
A17
NC
VCCQ
NC
NC
NC
DQ8
VCCQ
DQ6
NC
VCCQ
DQ4
NC
VCCQ
NC
DQ1
NC
ZZ
VCCQ
NC
NC
NC
VCCQ
GND
NC
NC
DQ9
DQ10
GND
VCCQ
DQ11
DQ12
NC
VCC
NC
GND
DQ13
DQ14
VCCQ
GND
DQ15
DQ16
NC
NC
GND
VCCQ
NC
NC
NC
BW2
BW1
A6
A7CECE2NCNC
99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
100
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
A5A4A3A2A1
MODE
CE2
A0
NC
NC
VCC
GND
GND
VCC
CLK
NC
GW
NC
BWEOEADSC
46 47 48 49 50
A10
A11
A12
ADSP
ADV
A13
A14
A8
A15
A9
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A16
A17
NC
NC
VCCQ
GND
NC
NC
DQ8
DQ7
GND
VCCQ
DQ6
DQ5
GND
NC
VCC
ZZ
DQ4
DQ3
VCCQ
GND
DQ2
DQ1
NC
NC
GND
VCCQ
NC
NC
NC
256K x 16
PIN DESCRIPTIONS
A0, A1 Synchronous Address Inputs. These
pins must tied to the two LSBs of the
address bus.
A2-A17 Synchronous Address Inputs
CLK Synchronous Clock
ADSP Synchronous Processor Address
Status
ADSC Synchronous Controller Address
Status
ADV Synchronous Burst Address Advance
BW1-BW2 Synchronous Byte Write Enable
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
BWE Synchronous Byte Write Enable
GW Synchronous Global Write Enable
CE, CE2, CE2 Synchronous Chip Enable
OE Output Enable
DQ1-DQ16 Synchronous Data Input/Output
MODE Burst Sequence Mode Selection
VCC +3.3V Power Supply
GND Ground
VCCQ
Isolated Output Buffer Supply: +3.3V
ZZ Snooze Enable
3
IS61SP25616
IS61SP25618 ISSI
PIN CONFIGURATION
119-pin PBGA (Top View) 100-Pin TQFP
®
1 2 3 4 5 6 7
A
VCCQ
B
C
D
DQ9
E
F
VCCQ
G
H
DQ12
J
VCCQ
K
L
DQ14
M
VCCQ
N
DQ16
P
R
T
U
VCCQ
NC
NC
NC
NC
NC
NC
NC
NC
A6
CE2
A7
NC
DQ10
NC
DQ11
NC
VCC
DQ13
NC
DQ15
NC
DQP2
A5
A11
NC
A4
A3
A2
GND
GND
GND
BW2
GND
NC
GND
GND
GND
GND
GND
MODE
A10
NC
ADSP
ADSC
VCC
NC
CE
OE
ADV
GW
VCC
CLK
NC
BWE
A1
A0
VCC
NC
NC
A8
A9
A12
GND
GND
GND
GND
GND
NC
GND
BW1
GND
GND
GND
GND
A14
NC
A16
CE2
A15
DQP1
NC
DQ7
NC
DQ5
VCC
NC
DQ3
NC
DQ2
NC
A13
A17
NC
VCCQ
NC
NC
NC
DQ8
VCCQ
DQ6
NC
VCCQ
DQ4
NC
VCCQ
NC
DQ1
NC
ZZ
VCCQ
NC
NC
NC
VCCQ
GND
NC
NC
DQ9
DQ10
GND
VCCQ
DQ11
DQ12
NC
VCC
NC
GND
DQ13
DQ14
VCCQ
GND
DQ15
DQ16
DQP2
NC
GND
VCCQ
NC
NC
NC
BW2
BW1
A6
A7CECE2NCNC
99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
100
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
A5A4A3A2A1
MODE
CE2
A0
NC
NC
VCC
GND
GND
VCC
CLK
NC
GW
NC
BWEOEADSC
46 47 48 49 50
A10
A11
A12
ADSP
ADV
A13
A14
A8
A15
A9
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A16
A17
NC
NC
VCCQ
GND
NC
DQP1
DQ8
DQ7
GND
VCCQ
DQ6
DQ5
GND
NC
VCC
ZZ
DQ4
DQ3
VCCQ
GND
DQ2
DQ1
NC
NC
GND
VCCQ
NC
NC
NC
256K x 18
PIN DESCRIPTIONS
A0, A1 Synchronous Address Inputs. These
pins must tied to the two LSBs of the
address bus.
A2-A17 Synchronous Address Inputs
CLK Synchronous Clock
ADSP Synchronous Processor Address
Status
ADSC Synchronous Controller Address
Status
ADV Synchronous Burst Address Advance
BW1-BW2 Synchronous Byte Write Enable
BWE Synchronous Byte Write Enable
4
GW Synchronous Global Write Enable
CE, CE2, CE2 Synchronous Chip Enable
OE Output Enable
DQ1-DQ16 Synchronous Data Input/Output
MODE Burst Sequence Mode Selection
VCC +3.3V Power Supply
GND Ground
VCCQ Isolated Output Buffer Supply: +3.3V
ZZ Snooze Enable
DQP1-DQP2
Parity Data I/O DQP1 is parity for DQ1-8;
DQP2 is parity for DQ9-16
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
IS61SP25616
IS61SP25618 ISSI
TRUTH TABLE
Address
Operation Used CE CE2 CE2 ADSP ADSC ADV WRITE OE DQ
Deselected, Power-down None H X X X L X X X High-Z
Deselected, Power-down None L X H L XXXX High-Z
Deselected, Power-down None L L X L XXXX High-Z
Deselected, Power-down None X X H H L X X X High-Z
Deselected, Power-down None X L X H L X X X High-Z
Read Cycle, Begin Burst External L H L L XXXXQ
Read Cycle, Begin Burst External L H L H L X Read X Q
Write Cycle, Begin Burst External L H L H L X Write X D
Read Cycle, Continue Burst Next X X X H H L Read L Q
Read Cycle, Continue Burst Next X X X H H L Read H High-Z
Read Cycle, Continue Burst Next H X X X H L Read L Q
Read Cycle, Continue Burst Next H X X X H L Read H High-Z
Write Cycle, Continue Burst Next X X X H H L Write X D
Write Cycle, Continue Burst Next H X X X H L Write X D
Read Cycle, Suspend Burst Current X X X H H H Read L Q
Read Cycle, Suspend Burst Current X X X H H H Read H High-Z
Read Cycle, Suspend Burst Current H X X X H H Read L Q
Read Cycle, Suspend Burst Current H X X X H H Read H High-Z
Write Cycle, Suspend Burst Current X X X H H H Write X D
Write Cycle, Suspend Burst Current H X X X H H Write X D
®
PARTIAL TRUTH TABLE
Function GW BWE BW1 BW2
Read H H X X
Read H L H H
Write Byte 1 H L L H
Write All Bytes H L L L
Write All Bytes L X X X
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
04/17/01
5