ISSI IS61LV6424-15TQ, IS61LV6424-12TQI, IS61LV6424-12TQ, IS61LV6424-10TQI, IS61LV6424-9TQI Datasheet

FEATURES

• High-speed access time: 9, 10, 12, 15 ns

• CMOS low power operation

❑ 594 mW (max.) operating @ 9 ns
❑ 36 mW (max.) CMOS standby

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh
required

• Three state outputs

• Available in 100-pin TQFP

• Industrial temperature available

DESCRIPTION

The ISSI IS61LV6424 is a high-speed, static RAM organized
as 65,536 words by 24 bits. It is fabricated using ISSI's high­performance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields ac­cess times as fast as 9 ns with low power consumption.

When CE1 is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE1, CE2, and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory.

The IS61LV6424 is packaged in the JEDEC standard
100-pin TQFP

FUNCTIONAL BLOCK DIAGRAM

DECEMBER 2000

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.

IS61LV6424

64K x 24 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY

ISSI

®

A0-A14

CE1

CE2

OE

WE

64K x 24

MEMORY ARRAY

ROW

DECODER

COLUMN

DECODER

I/O DATA

CIRCUIT

I/O0-I/O23

CONTROL

CIRCUIT

GND

V

CC

MULTIPLEX

ADDRESS
CONTROL

X/Y

A15

V/S

Integrated Silicon Solution, Inc. — 1-800-379-4774 1

Rev. A

12/19/00

IS61LV6424

ISSI

®

2 Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

12/19/00

PIN CONFIGURATION
100-Pin TQFP

PIN DESCRIPTIONS

A0-A14 Address Inputs
A15, X/Y Multiplexed Address

I/O0-I/O23 Data Inputs/Outputs

CE1, CE2 Chip Enable Input
OE Output Enable Input
WE Write Enable Input

V/S Address Multiplexer

NC No Connection

VCC Power

VCCQ Isolated Output Buffer Supply

GND Ground

GNDQ Isolated Output Buffer Ground

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30

80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51

NC
NC
NC
NC

NC
I/O12
I/O13
I/O14
I/O15

GNDQ

V

CCQ

I/O16
I/O17

NC

V

CC

NC

GND
I/O18
I/O19
V

CCQ

GNDQ

I/O20
I/O21
I/O22
I/O23

NC
NC
NC
NC
NC

NC
NC
NC
NC
NC
I/O11
I/O10
I/O9
I/O8
GNDQ
V

CCQ

I/O7
I/O6
GND
NC
V

CC

NC
I/O5
I/O4
V

CCQ

GNDQ
I/O3
I/O2
I/O1
I/O0
NC
NC
NC
NC
NC

31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50

100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81

NC

A13

A12

A11

A10

A9

A8

NC

NC

GND

V

CC

NC

NC

A7A6A5A4A3

A2

NC

A14

A15

CE1

CE2NCNCNCX/Y

V/S

V

CC

GNDNCWENCOENCNCNCA0

A1

IS61LV6424

1

2

3

4

5

6

7

8

9

10

11

12

ISSI

®

Integrated Silicon Solution, Inc. — 1-800-379-4774 3

Rev. A

12/19/00

OPERATING RANGE

Range Ambient Temperature VCC (9, 10 ns) VCC (12, 15 ns)

Commercial 0°C to +70°C 3.3V + 10%, – 5% 3.3V ± 10%
Industrial –40°C to +85°C 3.3V + 10%, – 5% 3.3V ± 10%

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter Test Conditions Min. Max. Unit

VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 — V

VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA — 0.4 V

VIH Input HIGH Voltage 2.2 VCC + 0.3 V

VIL Input LOW Voltage

(1)

–0.3 0.8 V

ILI Input Leakage GND - VIN - VCC –1 1 µA

ILO Output Leakage GND - VOUT - VCC, Outputs Disabled –1 1 µA

Note:

1. V

IL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns).

VIH (max.) = VCC + 0.3V DC; VIH (max.) = VCC + 2.0V AC (pulse width - 2.0 ns).

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol Parameter Value Unit

VCC Power Supply Voltage Relative to GND –0.5 to 5.0 V
VTERM Terminal Voltage with Respect to GND –0.5 to Vcc + 0.5 V
TSTG Storage Temperature –65 to + 150 °C
TBIAS Temperature Under Bias: Com. –10 to + 85 °C

Ind. –45 to + 90 °C
PT Power Dissipation 2.0 W
IOUT DC Output Current ±20 mA

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

TRUTH TABLE

Mode CE1 CE2 OE WE V/S I/O0-I/O23 Vcc Current

Not Selected H XXXX High-Z ISB1, ISB2

X L X X X High-Z

Read Using X/Y LHLHH DOUT ICC
Read Using A15 L H L H L DOUT ICC
Write Using X/Y LHXLH DIN ICC
Write Using A15 L H X L L DIN ICC
Output Disable L H H H X High-Z ICC