ISSI IS61LV6416-8KI, IS61LV6416-8K, IS61LV6416-8B, IS61LV6416-8TI, IS61LV6416-8 BI Datasheet
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FEATURES
• High-speed access time: 8, 10, 12, 15, and 20 ns
• CMOS low power operation
— 250 mW (typical) operating
— 250 µW (typical) standby
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
IS61LV6416
64K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
DESCRIPTION
The ISSI IS61LV6416 is a high-speed, 1,048,576-bit
static RAM organized as 65,536 words by 16 bits. It is
fabricated using ISSI's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields access times
as fast as 8 ns with low power consumption.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip
Enable and Output Enable inputs, CE and OE. The active
LOW Write Enable (WE) controls both writing and reading
of the memory.A data byte allows Upper Byte (UB) and
Lower Byte (LB) access.
The IS61LV6416 is packaged in the JEDEC standard
44-pin 400-mil SOJ, 44-pin TSOP, and 48-pin mini BGA
(6mm x 8mm).
FUNCTIONAL BLOCK DIAGRAM
OCTOBER 2000
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
ISSI
®
A0-A15
CE
OE
WE
64K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
UB
LB
Integrated Silicon Solution, Inc.
1
Rev. D
10/20/00
IS61LV6416
2
Integrated Silicon Solution, Inc.
Rev. D
10/20/00
ISSI
®
PIN CONFIGURATIONS
44-Pin SOJ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A15
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
A8
A7
NC
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A15
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
A8
A7
NC
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
44-Pin TSOP
48-Pin mini BGA (6mm x 8mm) PIN DESCRIPTIONS
A0-A15 Address Inputs
I/O0-I/O15 Data Inputs/Outputs
CE Chip Enable Input
OE Output Enable Input
WE Write Enable Input
LB Lower-byte Control (I/O0-I/O7)
UB Upper-byte Control (I/O8-I/O15)
NC No Connection
Vcc Power
GND Ground
1 2 3 4 5 6
A
B
C
D
E
F
G
H
LB
OE
A0
A1
A2
N/C
I/O
8
UB A3
A4
CE I/O
0
I/O
9
I/O10A5
A6
I/O1I/O
2
GND
I/O
11
NC
A7
I/O
3
Vcc
Vcc
I/O
12
NC
NC
I/O
4
GND
I/O
14
I/O
13
A14
A15
I/O
5
I/O
6
I/O
15
NC
A12
A13
WE
I/O
7
NC
A8
A9
A10
A11 NC
IS61LV6416
Integrated Silicon Solution, Inc.
3
Rev. D
10/20/00
1
2
3
4
5
6
7
8
9
10
11
12
ISSI
®
OPERATING RANGE
Range Ambient Temperature Vcc(8,10ns) VCC (12,15,20NS)
Commercial 0°C to +70°C 3.3V+10%,-5% 3.3V ± 10%
Industrial –40°C to +85°C 3.3V+10%,-5% 3.3V ± 10%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 — V
VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA — 0.4 V
VIH Input HIGH Voltage 2 VCC + 0.3 V
VIL Input LOW Voltage
(1)
–0.3 0.8 V
ILI Input Leakage GND ≤ VIN ≤ VCC –22µA
ILO Output Leakage GND ≤ VOUT ≤ VCC, Outputs Disabled –22µA
Notes:
1. V
IL (min.) = –2.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
VTERM Terminal Voltage with Respect to GND –0.5 to Vcc+0.5 V
TSTG Storage Temperature –65 to +150 °C
PT Power Dissipation 1.5 W
IOUT DC Output Current (LOW) 20 mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
TRUTH TABLE
I/O PIN
Mode WE CE OE LB UB I/O0-I/O7 I/O8-I/O15 Vcc Current
Not Selected X H X X X High-Z High-Z ISB1, ISB2
Output Disabled H L H X X High-Z High-Z ICC
X L X H H High-Z High-Z
Read H L L L H D
OUT High-Z ICC
H L L H L High-Z DOUT
HLLLL DOUT DOUT
Write L L X L H DIN High-Z ICC
L L X H L High-Z DIN
LLXLL DIN DIN
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