ISSI IS61LV3216L-20K, IS61LV3216L-15TI, IS61LV3216L-15KI, IS61LV3216L-10K, IS61LV3216L-20T Datasheet
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®
IS61LV3216L
32K x 16 LOW VOLTAGE CMOS STATIC RAM
FEATURES
• High-speed access time: 10, 12, 15, and 20 ns
• CMOS low power operation
— 130 mW (typical) operating
— 150 µW (typical) standby
• TTL compatible interface levels
• Single 3.3V + 10%, –5% power supply for 10
and 12 ns
• Single 3.3V ± 10% power supply for 15
and 20 ns
• Fully static operation: no clock or refresh
required
• Three state outputs
• Industrial temperature available
• Available in 44-pin 400-mil SOJ package and
44-pin TSOP (Type II)
DESCRIPTION
The ISSI IS61LV3216L is a high-speed, 512K static RAM
organized as 32,768 words by 16 bits. It is fabricated using
ISSI's high-performance CMOS technology. This highly reli-
able process coupled with innovative circuit design techniques, yields fast access times with low power consumption.
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down to
150 µW (typical) with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.A
data byte allows Upper Byte (UB) and Lower Byte (LB) access.
The IS61LV3216L is packaged in the JEDEC standard 44-pin
400-mil SOJ and 44-pin TSOP (Type II).
ISSI
DECEMBER 2000
FUNCTIONAL BLOCK DIAGRAM
A0-A14
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
CE
OE
WE
UB
LB
DECODER
I/O
DATA
CIRCUIT
CONTROL
CIRCUIT
32K x 16
MEMORY ARRAY
COLUMN I/O
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774 1
Rev. A
12/19/00
IS61LV3216L
®
ISSI
PIN CONFIGURATIONS
44-Pin SOJ
NC
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
A8
A7
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
44-Pin TSOP (TYPE II)
A9
A8
A7
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
NC
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
NC
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
PIN DESCRIPTIONS
A0-A14 Address Inputs
I/O0-I/O15 Data Inputs/Outputs
CE Chip Enable Input
OE Output Enable Input
WE Write Enable Input
LB Lower-byte Control (I/O0-I/O7)
UB Upper-byte Control (I/O8-I/O15)
NC No Connection
Vcc Power
GND Ground
TRUTH TABLE
I/O PIN
Mode WE CE OE L B UB I/O0-I/O7 I/O8-I/O15 Vcc Current
Not Selected X H X X X High-Z High-Z ISB1, ISB2
Output Disabled H L H X X High-Z High-Z ICC
X L X H H High-Z High-Z
Read H L L L H DOUT High-Z ICC
H L L H L High-Z DOUT
HLLLL DOUT DOUT
Write L L X L H DIN High-Z ICC
L L X H L High-Z DIN
LLXLL DIN DIN
2 Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
IS61LV3216L
®
ISSI
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCC Supply Voltage with Respect to GND –0.5 to +4.6 V
VTERM Terminal Voltage with Respect to GND –0.5 to Vcc + 0.5 V
TSTG Storage Temperature –65 to +150 °C
PT Power Dissipation 1.0 W
IOUT DC Output Current (LOW) 20 mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
OPERATING RANGE
Range Ambient Temperature VCC 10 ns, 12 ns VCC 15 ns, 20 ns
Commercial 0°C to + 70°C 3.3V +10%, –5% 3.3V ± 10%
Industrial –40°C to + 85°C 3.3V +10%, –5% 3.3V ± 10%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
(1)
1
2
3
4
5
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 — V
VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA — 0.4 V
VIH Input HIGH Voltage 2 VCC + 0.3 V
VIL Input LOW Voltage
ILI Input Leakage GND - VIN - VCC –1 1 µA
ILO Output Leakage GND - VOUT - VCC, Outputs Disabled –2 2 µA
Note:
IL (min.) = –3.0V for pulse width less than 10 ns.
1. V
POWER SUPPLY CHARACTERISTICS
Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Min. Max. Unit
ICC Vcc Dynamic Operating VCC = Max., Com. — 130 — 120 — 110 — 100 mA
Supply Current IOUT = 0 mA, f = fMAX Ind. — — — 130 — 120 — 110
ISB1 TTL Standby Current VCC = Max., Com. — 10 — 10 — 10 — 10 mA
(TTL Inputs) VIN = VIH or VIL Ind.—— —10 —10 —10
ISB2 CMOS Standby VCC = Max., Com.—1—1—1—1mA
Current (CMOS Inputs) CE • VCC – 0.2V, Ind. — — — 1 — 1 — 1
(1)
CE • VIH , f = 0
VIN • VCC – 0.2V, or
VIN - 0.2V, f = 0
(1)
(Over Operating Range)
-10 ns -12 ns -15 ns -20 ns
–0.3 0.8 V
6
7
8
9
10
11
12
Note:
1. At f = f
Integrated Silicon Solution, Inc. — 1-800-379-4774 3
Rev. A
12/19/00
MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
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