ISSI IS61LV3216-20T, IS61LV3216-20KI, IS61LV3216-20K, IS61LV3216-15TI, IS61LV3216-15KI Datasheet

IS61LV3216 ISSI

®

32K x 16 LOW VOLTAGE CMOS STATIC RAM

FEATURES

• High-speed access time: 10, 12, 15, and 20 ns

• CMOS low power operation
— 150 mW (typical) operating
— 150 µW (typical) standby

• TTL compatible interface levels

• Single 3.3V ± 10% power supply

• Fully static operation: no clock or refresh
required

• Three state outputs

• Industrial temperature available

• Available in 44-pin 400-mil SOJ package and
44-pin TSOP (Type 2)

FUNCTIONAL BLOCK DIAGRAM

DESCRIPTION

The ISSI IS61LV3216 is a high-speed, 512K static RAM
organized as 32,768 words by 16 bits. It is fabricated using

ISSI's high-performance CMOS technology. This highly reli-

able process coupled with innovative circuit design tech­niques, yields fast access times with low power consumption.

When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down
with CMOS input levels.

Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.A
data byte allows Upper Byte (UB) and Lower Byte (LB) access.

The IS61LV3216 is packaged in the JEDEC standard 44-pin
400-mil SOJ and 44-pin TSOP (Type 2).

NOVEMBER 1997

A0-A14

VCC

GND

I/O0-I/O7

Lower Byte

I/O8-I/O15

Upper Byte

CE

OE
WE

UB

LB

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.

DECODER

I/O

DATA

CIRCUIT

CONTROL

CIRCUIT

32K x 16

MEMORY ARRAY

COLUMN I/O

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

04/17/01

1

IS61LV3216 ISSI

®

PIN CONFIGURATIONS

44-Pin SOJ

NC

A14

A13

A12

A11

CE

I/O0

I/O1

I/O2

I/O3

Vcc

GND

I/O4

I/O5

I/O6

I/O7

WE

A10

A9

A8

A7

NC

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

24

23

A0

A1

A2

OE
UB
LB

I/O15

I/O14

I/O13

I/O12

GND

Vcc

I/O11

I/O10

I/O9

I/O8

NC

A3

A4

A5

A6

NC

44-Pin TSOP

NC
A14
A13
A12
A11

CE

I/O0
I/O1
I/O2
I/O3

Vcc

GND

I/O4
I/O5
I/O6
I/O7

WE

A10

A9
A8
A7

NC

1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22

44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23

A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC

PIN DESCRIPTIONS

A0-A14 Address Inputs

I/O0-I/O15 Data Inputs/Outputs

CE Chip Enable Input
OE Output Enable Input
WE Write Enable Input

LB Lower-byte Control (I/O0-I/O7)
UB Upper-byte Control (I/O8-I/O15)

NC No Connection

Vcc Power

GND Ground

TRUTH TABLE

I/O PIN

Mode WE CE OE L B UB I/O0-I/O7 I/O8-I/O15 Vcc Current

Not Selected X H X X X High-Z High-Z ISB1, ISB2
Output Disabled H L H X X High-Z High-Z ICC

X L X H H High-Z High-Z

Read H L L L H DOUT High-Z ICC

H L L H L High-Z DOUT
HLLLL DOUT DOUT

Write L L X L H DIN High-Z ICC

L L X H L High-Z DIN
LLXLL DIN DIN

2

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

04/17/01

IS61LV3216 ISSI

®

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

VCC Supply Voltage with Respect to GND –0.5 to +4.6 V
VTERM Terminal Voltage with Respect to GND –0.5 to Vcc + 0.5 V
TSTG Storage Temperature –65 to +150 °C
PT Power Dissipation 1.0 W
IOUT DC Output Current (LOW) 20 mA

OPERATING RANGE

Range Ambient Temperature VCC

Commercial 0°C to +70°C 3.3V ± 10%

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter Test Conditions Min. Max. Unit

VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 — V

VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA — 0.4 V

(1)

Note:

1. Stress greater than those listed under
ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the
device. This is a stress rating only and
functional operation of the device at
these or any other conditions above
those indicated in the operational sec­tions of this specification is not im­plied. Exposure to absolute maximum
rating conditions for extended periods
may affect reliability.

1

2

3

4

5

VIH Input HIGH Voltage 2.2 VCC + 0.3 V

VIL Input LOW Voltage

ILI Input Leakage GND - VIN - VCC –22µA

ILO Output Leakage GND - VOUT - VCC, Outputs Disabled –22µA

Notes:

1. VIL (min.) = –3.0V for pulse width less than 10 ns.

(1)

–0.3 0.8 V

6

7

8

POWER SUPPLY CHARACTERISTICS

Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Min. Max. Unit

ICC Vcc Dynamic Operating VCC = Max., Com. — 220 — 200 — 180 — 160 mA

Supply Current IOUT = 0 mA, f = fMAX Ind. —— —230 — 200 — 180

ISB1 TTL Standby Current VCC = Max., Com. — 10 — 10 — 10 — 10 mA

(TTL Inputs) VIN = VIH or VIL Ind. —— —20 — 20 — 20

CE • VIH , f = 0

ISB2 CMOS Standby VCC = Max., Com. — 5 — 5 — 5 — 5mA

Current (CMOS Inputs) CE • VCC – 0.2V, Ind. —— —10 — 10 — 10

VIN • VCC – 0.2V, or
VIN - 0.2V, f = 0

(1)

(Over Operating Range)

-10 ns -12 ns -15 ns -20 ns

9

10

11

12

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. A

04/17/01

3