ISSI IS61LV2568-8T, IS61LV2568-8KI, IS61LV2568-8K, IS61LV2568-15T, IS61LV2568-15KI Datasheet
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ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
IS61LV2568
256K x 8 HIGH-SPEED CMOS STATIC RAM
DECEMBER 2000
FEATURES
• High-speed access times:
8, 10, 12 and 15 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with CE and OE
options
• CE power-down
• Low power: 540 mW @ 10 ns
36 mW standby mode
• TTL compatible inputs and outputs
• Single 3.3V ±10% power supply
• Packages available:
– 36-pin 400-mil SOJ
– 44-pin TSOP (Type II)
DESCRIPTION
The ISSI IS61LV2568 is a very high-speed, low power,
262,144-word by 8-bit CMOS static RAM. The IS61LV2568
is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance
and low power consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 36mW (max.) with CMOS input levels.
The IS61LV2568 operates from a single 3.3V power
supply and all inputs are TTL-compatible.
The IS61LV2568 is available in 36-pin 400-mil SOJ, and
44-pin TSOP (Type II) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A17
CE
OE
WE
256K X 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
ISSI
®
Integrated Silicon Solution, Inc. — 1-800-379-4774 1
Rev. A
12/19/00
IS61LV2568
ISSI
®
2 Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
PIN CONFIGURATION
36-Pin SOJ
PIN DESCRIPTIONS
A0-A17 Address Inputs
CE Chip Enable Input
OE Output Enable Input
WE Write Enable Input
I/O0-I/O7 Bidirectional Ports
Vcc Power
GND Ground
NC No Connection
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
VCC Supply voltage with Respect to GND –0.5 to +4.6 V
VTERM Terminal Voltage with Respect to GND –0.5 to Vcc + 0.5 V
TBIAS Temperature Under Bias Com. –10 to +85 °C
Ind. –45 to +90
TSTG Storage Temperature –65 to +150 °C
PD Power Dissipation 1.0 W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
TRUTH TABLE
Mode WE CE OE I/O Operation Vcc Current
Not Selected X H X High-Z ISB1, ISB2
(Power-down)
Output Disabled H L H High-Z ICC
Read H L L DOUT ICC
Write L L X DIN ICC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
A4
A3
A2
A1
A0
CE
I/O0
I/O1
Vcc
GND
I/O2
I/O3
WE
A17
A16
A15
A14
A13
NC
A5
A6
A7
A8
OE
I/O7
I/O6
GND
Vcc
I/O5
I/O4
A9
A10
A11
A12
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
NC
A4
A3
A2
A1
A0
CE
I/O0
I/O1
Vcc
GND
I/O2
I/O3
WE
A17
A16
A15
A14
A13
NC
NC
NC
NC
NC
A5
A6
A7
A8
OE
I/O7
I/O6
GND
Vcc
I/O5
I/O4
A9
A10
A11
A12
NC
NC
NC
NC
44
43
42
41
44-Pin TSOP (Type II)
IS61LV2568
ISSI
®
Integrated Silicon Solution, Inc. — 1-800-379-4774 3
Rev. A
12/19/00
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 — V
VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA — 0.4 V
VIH Input HIGH Voltage
(1)
2.0 VCC + 0.3 V
VIL Input LOW Voltage
(1)
–0.3 0.8 V
I
LI Input Leakage GND - VIN - VCC Com. –1 1 µA
Ind. –5 5
ILO Output Leakage GND - VOUT - VCC, Outputs Disabled Com. –1 1 µA
Ind. –5 5
Note:
1. VIL(min) = –0.3V (DC); VIL(min) = –2.0V (pulse width - 2.0 ns).
V
IH(max) = VCC + 0.3V (DC); VIH(max) = Vcc + 2.0V (pulse width - 2.0 ns).
CAPACITANCE
(1,2)
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 6 pF
CI/O Input/Output Capacitance VOUT = 0V 8 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A = 25°C, f = 1 MHz, Vcc = 3.3V.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-8 ns -10 ns -12 ns -15 ns
Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Min. Max. Unit
ICC Vcc Operating VCC = Max., CE = VIL Com. — 150 — 125 — 110 — 90 mA
Supply Current IOUT = 0 mA, f = Max. Ind. — 160 — 135 — 120 — 100
ISB1 TTL Standby VCC = Max., Com. — 50 — 40 — 35 — 30 mA
Current VIN = VIH or VIL Ind. — 60 — 50 — 45 — 40
(TTL Inputs) CE • VIH, f = max
ISB2 CMOS Standby VCC = Max., Com. — 10 — 10 — 10 — 10 mA
Current CE - VCC – 0.2V, Ind. — 20 — 20 — 20 — 20
(CMOS Inputs) VIN > VCC – 0.2V, or
VIN - 0.2V, f = 0
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
OPERATING RANGE
Range Ambient Temperature VCC
Commercial 0°C to +70°C 3.3V ± 10%
Industrial –40°C to +85°C 3.3V ± 10%
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