ISSI IS61LV12824-8TQ, IS61LV12824-12TQI, IS61LV12824-12TQ, IS61LV12824-12BI, IS61LV12824-10TQI Datasheet
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IS61LV12824 ISSI
®
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. B
04/17/01
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
FEATURES
• High-speed access time: 8, 9, 10, 12 ns
• CMOS low power operation
— 756 mW (max.) operating @ 8 ns
— 36 mW (max.) standby @ 8 ns
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Available in 119-pin Plastic Ball Grid Array
(PBGA) and 100-pin TQFP packages.
• Industrial temperature available
DESCRIPTION
The ISSI IS61LV12824 is a high-speed, static RAM organized
as 131,072 words by 24 bits. It is fabricated using ISSI's highperformance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.
When CE1, CE2 are HIGH and CE2 is LOW (deselected), the
device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE1, CE2, CE2 and OE. The active
LOW Write Enable (WE) controls both writing and reading of
the memory.
The IS61LV12824 is packaged in the JEDEC standard
119-pin PBGA and 100-pin TQFP.
FUNCTIONAL BLOCK DIAGRAM
DECEMBER 1999
A0-A16
CE1
OE
WE
128K x 24
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
CE2
CE2
I/O0-I/O23
128K x 24 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
IS61LV12824
ISSI
®
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/17/01
PIN CONFIGURATION - 119-pin PBGA
PIN DESCRIPTIONS
A0-A16 Address Inputs
I/O0-I/O23 Data Inputs/Outputs
CE1, CE2 Chip Enable Input LOW
CE2 Chip Enable Input HIGH
OE Output Enable Input
WE Write Enable Input
NC No Connection
Vcc Power
VCCQ I/O Power
GND Ground
1234567
A NC A11 A14 A15 A16 A4 NC
B NC A12 A13 CE1 A5 A3 NC
C I/O16 NC CE2 NC CE2 NC I/O0
D I/O17 VCCQ GND GND GND VCCQ I/O1
E I/O18 GND VCC GND VCC GND I/O2
F I/O19 VCCQ GND GND GND VCCQ I/O3
G I/O20 GND VCC GND VCC GND I/O4
H I/O21 VCCQ GND GND GND VCCQ I/O5
J VCCQ GND VCC GND VCC GND VCCQ
K I/O22 VCCQ GND GND GND VCCQ I/O6
L I/O23 GND VCC GND VCC GND I/O7
M I/O12 VCCQ GND GND GND VCCQ I/O8
N I/O13 GND VCC GND VCC GND I/O9
P I/O14 VCCQ GND GND GND VCCQ I/O10
R I/O15 NC NC NC NC NC I/O11
T NC A10 A8 WE A0 A1 NC
U NC A9 A7 OE A6 A2 NC
IS61LV12824
1
2
3
4
5
6
7
8
9
10
11
12
ISSI
®
Integrated Silicon Solution, Inc. — 1-800-379-4774
3
Rev. B
04/17/01
PIN CONFIGURATION
100-Pin TQFP
NC
Vcc
GND
I/O0
I/O1
GND
Vcc
Q
I/O2
I/O3
GND
Vcc
Q
I/O4
I/O5
Vcc
NC
NC
GND
I/O6
I/O7
Vcc
Q
GND
I/O8
I/O9
Vcc
Q
GND
I/O10
I/O11
Vcc
GND
NC
NCNCA11
A12
A13
A14
A15
CE2
Vcc
GND
CE2
CE1
A16A5A4A3NCNCNC
NC
NC
Vcc
GND
I/O16
I/O17
GND
Vcc
Q
I/O18
I/O19
GND
Vcc
Q
I/O20
I/O21
Vcc
NC
NC
GND
I/O22
I/O23
Vcc
Q
GND
I/O12
I/O13
Vcc
Q
GND
I/O14
I/O15
Vcc
GND
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
100
99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45
NCNCNC
NC
A10
A9A8A7
OE
GND
Vcc
WE
A6A0A1
A2
NCNCNC
NC
46 47 48 49 50
IS61LV12824
ISSI
®
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/17/01
OPERATING RANGE
Range Ambient Temperature VCC (8, 9 ns) VCC (10, 12 ns)
Commercial 0°C to +70°C 3.3V + 10%, – 5% 3.3V ± 10%
Industrial –40°C to +85°C 3.3V + 10%, – 5% 3.3V ± 10%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 — V
VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA — 0.4 V
VIH Input HIGH Voltage 2.2 VCC + 0.3 V
VIL Input LOW Voltage
(1)
–0.3 0.8 V
ILI Input Leakage GND ≤ VIN ≤ VCC –11µA
ILO Output Leakage GND ≤ VOUT ≤ VCC, Outputs Disabled –11µA
Note:
1. V
IL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width ≤ 2.0 ns).
VIH (max.) = VCC + 0.3V DC; VIH (max.) = VCC + 2.0V AC (pulse width ≤ 2.0 ns).
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
VCC Power Supply Voltage Relative to GND –0.5 to 5.0 V
VTERM Terminal Voltage with Respect to GND –0.5 to Vcc + 0.5 V
TSTG Storage Temperature –65 to + 150 °C
TBIAS Temperature Under Bias: Com. –10 to + 85 °C
Ind. –45 to + 90 °C
PT Power Dissipation 2.0 W
IOUT DC Output Current ±20 mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
TRUTH TABLE
Mode W E CE1 CE2 CE2 OE I/O0-I/O23 Vcc Current
Not Selected X H X X X High-Z ISB1, ISB2
XXLXX
XXXHX
Output Disabled H L H L H High-Z ICC
Read H L H L L DOUT ICC
Write L L H L X DIN ICC
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