ISSI IS61LV12816-10KI, IS61LV12816-10BI, IS61LV12816-10B, IS61LV12816-8K, IS61LV12816-8BI Datasheet
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IS61LV12816 ISSI
128K x 16 HIGH-SPEED CMOS STATIC RAM
®
WITH 3.3V SUPPLY
FEATURES
• High-speed access time: 8, 10, 12, and 15 ns
• CMOS low power operation
• TTL and CMOS compatible interface levels
• Single 3.3V ± 10% power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
FUNCTIONAL BLOCK DIAGRAM
NOVEMBER 2000
DESCRIPTION
The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static
RAM organized as 131,072 words by 16 bits. It is fabricated
using ISSI's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields access times as fast as 8 ns with low power
consumption.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be reduced
down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS61LV12816 is packaged in the JEDEC standard 44-pin
400-mil SOJ, 44-pin TSOP, 44-pin LQFP, and 48-pin mini
BGA (6mm x 8mm).
A0-A16
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
CE
OE
WE
UB
LB
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
DECODER
I/O
DATA
CIRCUIT
CONTROL
CIRCUIT
128K x 16
MEMORY ARRAY
COLUMN I/O
Integrated Silicon Solution, Inc. — 1-800-379-4774
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
Rev. A
11/30/00
11/30/00
1
1
IS61LV12816
PIN CONFIGURATIONS
44-Pin SOJ (K)
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
NC
44-Pin TSOP (T)
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
ISSI
44
A5
43
A6
42
A7
41
OE
40
UB
39
LB
38
I/O15
37
I/O14
36
I/O13
35
I/O12
34
GND
33
Vcc
32
I/O11
31
I/O10
30
I/O9
29
I/O8
28
NC
27
A8
26
A9
25
A10
24
A11
23
NC
®
48-Pin mini BGA (B)
1 2 3 4 5 6
LB
I/O
I/O
GND
Vcc
I/O
I/O
NC
8
9
14
15
OE
UB A3
I/O10A5
I/O
11
I/O12NC
I/O
13
NC
A8
A
B
C
D
E
F
G
H
2
A14
A12
44-Pin LQFP (LQ)
A16
A15
A14
A13
A12
A11
A10A9OEUBLB
44 43 42 41 40 39 38 37 36 35 345
CE
A1
A0
NC
A9
A16
A15
A13
A10
A4
A6
A7
A2
CE I/O
I/O1I/O
I/O
3
I/O
GND
4
I/O
I/O
5
WE
A11 NC
N/C
I/O
0
2
Vcc
6
7
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
1
2
3
4
5
6
TOP VIEW
7
8
9
10
11
12 13 14 15 16 17 18 19 20 21 22
A0A1A2A3A4NCA5A6A7
WE
Integrated Silicon Solution, Inc. — 1-800-379-4774
33
32
31
30
29
28
27
26
25
24
23
A8
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
Rev. A
11/30/00
IS61LV12816
®
ISSI
PIN DESCRIPTIONS
A0-A16 Address Inputs
I/O0-I/O15 Data Inputs/Outputs
CE Chip Enable Input
OE Output Enable Input
WE Write Enable Input
LB Lower-byte Control (I/O0-I/O7)
UB Upper-byte Control (I/O8-I/O15)
NC No Connection
Vcc Power
GND Ground
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCC Power Supply Voltage Relative to GND –0.5 to 5.0 V
VTERM Terminal Voltage with Respect to GND –0.5 to Vcc + 0.5 V
TSTG Storage Temperature –65 to + 150 °C
TBIAS Temperature Under Bias: Com. –10 to + 85 °C
PT Power Dissipation 2.0 W
IOUT DC Output Current ±20 mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
(1)
Ind. –45 to + 90 °C
OPERATING RANGE
Range Ambient Temperature VCC
Commercial 0°C to + 70°C 3.3V ± 10%
Industrial –40°C to + 85°C 3.3V ± 10%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 — V
VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA — 0.4 V
(1)
(1)
2VCC + 0.3 V
–0.3 0.8 V
3
VIH Input HIGH Voltage
VIL Input LOW Voltage
ILI Input Leakage GND - VIN - VCC –11µA
ILO Output Leakage GND - VOUT - VCC, Outputs Disabled –11µA
Note:
IL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width - 2.0 ns).
1. V
IH (max.) = VCC + 0.3V DC; VIH (max.) = VCC + 2.0V AC (pulse width - 2.0 ns).
V
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/30/00
IS61LV12816
ISSI
TRUTH TABLE
I/O PIN
Mode WE CE OE LB U B I/O0-I/O7 I/O8-I/O15 Vcc Current
Not Selected X H X X X High-Z High-Z ISB1, ISB2
Output Disabled H L H X X High-Z High-Z ICC
X L X H H High-Z High-Z
Read H L L L H DOUT High-Z ICC
H L L H L High-Z DOUT
HLLLL DOUT DOUT
Write L L X L H DIN High-Z ICC
L L X H L High-Z DIN
LLXLL DIN DIN
®
POWER SUPPLY CHARACTERISTICS
Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Min. Max. Unit
ICC Vcc Operating VCC = Max., CE = VIL Com. — 150 — 125 — 110 — 90 mA
Supply Current IOUT = 0 mA, f = Max. Ind. — 160 — 135 — 120 — 100
ISB1 TTL Standby VCC = Max., Com. — 50 — 40 — 35 — 30 mA
Current VIN = VIH or VIL Ind. — 60 — 50 — 45 — 40
(TTL Inputs) CE • VIH, f = max
ISB2 CMOS Standby VCC = Max., Com. — 10 — 10 — 10 — 10 mA
Current CE - VCC – 0.2V, Ind. — 20 — 20 — 20 — 20
(CMOS Inputs) VIN > VCC – 0.2V, or
VIN - 0.2V, f = 0
Note:
1. At f = f
MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
(1)
(Over Operating Range)
-8 ns -10 ns -12 ns -15 ns
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/30/00
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