ISSI IS61C3216-15TI, IS61C3216-15T, IS61C3216-15KI, IS61C3216-15K, IS61C3216-12T Datasheet
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IS61C3216 ISSI
®
32K x 16 HIGH-SPEED CMOS STATIC RAM
FEATURES
• High-speed access time: 10, 12, 15, and 20 ns
• CMOS low power operation
— 450 mW (typical) operating
— 250 µW (typical) standby
• TTL compatible interface levels
• Single 5V ± 10% power supply
• I/O compatible with 3.3V device
• Fully static operation: no clock or refresh
required
• Three state outputs
• Industrial temperature available
• Available in 44-pin 400-mil SOJ package and
44-pin TSOP (Type II)
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ISSI IS61C3216 is a high-speed, 512K static RAM
organized as 32,768 words by 16 bits. It is fabricated using
ISSI's high-performance CMOS technology. This highly reli-
able process coupled with innovative circuit design techniques, yields fast access times with low power consumption.
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down
with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.A
data byte allows Upper Byte (UB) and Lower Byte (LB) access.
The IS61C3216 is packaged in the JEDEC standard 44-pin
400-mil SOJ and 44-pin TSOP (Type II).
JANUARY 1998
A0-A14
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
CE
OE
WE
UB
LB
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2001, Integrated Silicon Solution, Inc.
DECODER
I/O
DATA
CIRCUIT
CONTROL
CIRCUIT
32K x 16
MEMORY ARRAY
COLUMN I/O
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/17/01
1
IS61C3216 ISSI
®
PIN CONFIGURATIONS
44-Pin SOJ
NC
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
A8
A7
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
44-Pin TSOP (TYPE II)
NC
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
A8
A7
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
PIN DESCRIPTIONS
A0-A14 Address Inputs
I/O0-I/O15 Data Inputs/Outputs
CE Chip Enable Input
OE Output Enable Input
WE Write Enable Input
LB Lower-byte Control (I/O0-I/O7)
UB Upper-byte Control (I/O8-I/O15)
NC No Connection
Vcc Power
GND Ground
TRUTH TABLE
Mode WE CE OE L B UB I/O0-I/O7 I/O8-I/O15 Vcc Current
Not Selected X H X X X High-Z High-Z ISB1, ISB2
Output Disabled H L H X X High-Z High-Z ICC
X L X H H High-Z High-Z
Read H L L L H DOUT High-Z ICC
H L L H L High-Z DOUT
HLLLL DOUT DOUT
Write L L X L H DIN High-Z ICC
L L X H L High-Z DIN
LLXLL DIN DIN
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/17/01
IS61C3216 ISSI
®
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCC Supply Voltage with Respect to GND –0.5 to +7.0 V
VTERM Terminal Voltage with Respect to GND –0.5 to +7.0 V
TSTG Storage Temperature –65 to +150 °C
PT Power Dissipation 1.5 W
IOUT DC Output Current (LOW) 20 mA
OPERATING RANGE
Range Ambient Temperature Speed VCC
Commercial 0°C to +70°C -10, -12 5V ± 5%
Industrial –40°C to +85°C -12 5V ± 5%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 — V
VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA — 0.4 V
VIH Input HIGH Voltage 2.2 VCC + 0.5 V
VIL Input LOW Voltage
ILI Input Leakage GND - VIN - VCC –22µA
(1)
(1)
-15, -20 5V ± 10%
-15, -20 5V ± 10%
Note:
1. Stress greater than those listed under
ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the
device. This is a stress rating only and
functional operation of the device at
these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods
may affect reliability.
–0.5 0.8 V
1
2
3
4
5
6
7
ILO Output Leakage GND - VOUT - VCC, Outputs Disabled –22µA
Notes:
1. VIL (min.) = –3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS
Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Min. Max. Unit
ICC Vcc Dynamic Operating VCC = Max., Com. — 300 — 270 — 250 — 230 mA
Supply Current IOUT = 0 mA, f = fMAX Ind. —— —300 — 270 — 250
ISB1 TTL Standby Current VCC = Max., Com. — 40 — 40 — 40 — 40 mA
(TTL Inputs) VIN = VIH or VIL Ind. —— —45 — 45 — 45
CE • VIH , f = 0
ISB2 CMOS Standby VCC = Max., Com. — 5 — 5 — 5 — 5mA
Current (CMOS Inputs) CE • VCC – 0.2V, Ind. —— —10 — 10 — 10
VIN • VCC – 0.2V, or
VIN - 0.2V, f = 0
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
(1)
(Over Operating Range)
-10 -12 -15 -20
8
9
10
11
12
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/17/01
3
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