ISSI IS61C12816-20KI, IS61C12816-20K, IS61C12816-15T, IS61C12816-15KI, IS61C12816-15K Datasheet
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IS61C12816 ISSI
®
Integrated Silicon Solution, Inc. — 1-800-379-4774 1
Rev. A
12/19/00
FEATURES
• High-speed access time: 12, 15, and 20 ns
• CMOS low power operation
— 450 mW (typical) operating
— 250 µW (typical) standby
• TTL compatible interface levels
• Single 5V ± 10% power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Industrial temperature available
• Available in 44-pin SOJ package and
44-pin TSOP(II)
128K x 16 HIGH-SPEED CMOS STATIC RAM
DESCRIPTION
The ISSI IS61C12816 is a high-speed, 2,097,152-bit static
RAM organized as 131,072 words by 16 bits. It is fabricated
using ISSI's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design techniques, yields access times as fast as 12 ns with low power
consumption.
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down
with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.A
data byte allows Upper Byte (UB) and Lower Byte (LB) access.
The IS61C12816 is packaged in the JEDEC standard 44-pin
400-mil SOJ and 44-pin TSOP(II).
FUNCTIONAL BLOCK DIAGRAM
DECEMBER 2000
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
A0-A16
CE
OE
WE
128K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
UB
LB
2 Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
12/19/00
IS61C12816 ISSI
®
PIN CONFIGURATIONS
44-Pin SOJ
PIN DESCRIPTIONS
A0-A16 Address Inputs
I/O0-I/O15 Data Inputs/Outputs
CE Chip Enable Input
OE Output Enable Input
WE Write Enable Input
TRUTH TABLE
I/O PIN
Mode WE CE OE L B U B I/O0-I/O7 I/O8-I/O15 Vcc Current
Not Selected X H X X X High-Z High-Z ISB1, ISB2
Output Disabled H L H X X High-Z High-Z ICC1, ICC2
X L X H H High-Z High-Z
Read H L L L H DOUT High-Z ICC1, ICC2
H L L H L High-Z DOUT
HLLLL DOUT DOUT
Write L L X L H DIN High-Z ICC1, ICC2
L L X H L High-Z DIN
LLXLL DIN DIN
44-Pin TSOP(II)
LB Lower-byte Control (I/O0-I/O7)
UB Upper-byte Control (I/O8-I/O15)
NC No Connection
Vcc Power
GND Ground
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A15
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
A8
A7
A16
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A15
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
A8
A7
A16
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
Integrated Silicon Solution, Inc. — 1-800-379-4774 3
Rev. A
12/19/00
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IS61C12816 ISSI
®
OPERATING RANGE
Range Ambient Temperature Speed VCC
Commercial 0°C to +70°C -12 5V ± 5%
-15, -20 5V ± 10%
Industrial –40°C to +85°C -12 5V ± 5%
-15, -20 5V ± 10%
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-12 -15 -20
Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Unit
ICC Vcc Dynamic Operating VCC = Max., Com. 280 — 260 — 235 mA
Supply Current IOUT = 0 mA, f = fMAX Ind. — 300 — 290 — 255
ISB1 TTL Standby Current VCC = Max., Com. — 50 — 50 — 50 mA
(TTL Inputs) VIN = VIH or VIL Ind. —55 —55 —55
CE • VIH , f = 0
ISB2 CMOS Standby VCC = Max., Com. — 10 — 10 — 10 mA
Current (CMOS Inputs) CE • VCC – 0.2V, Ind. — 15 — 15 — 15
VIN • VCC – 0.2V, or
VIN - 0.2V, f = 0
Note:
1. At f = f
MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 — V
VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA — 0.4 V
VIH Input HIGH Voltage 2.2 VCC + 0.5 V
VIL Input LOW Voltage
(1)
–0.5 0.8 V
ILI Input Leakage GND - VIN - VCC –2 2 µA
ILO Output Leakage GND - VOUT - VCC, Outputs Disabled –2 2 µA
Notes:
1. V
IL (min.) = –3.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
VTERM Terminal Voltage with Respect to GND –0.5 to +7.0 V
TSTG Storage Temperature –65 to +150 °C
PT Power Dissipation 1.5 W
IOUT DC Output Current (LOW) 20 mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the
device at these or any other conditions above
those indicated in the operational sections of
this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
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