ISSI IS41LV44002-60JI, IS41LV44002-50J, IS41LV44004-60JI, IS41LV44004-60J, IS41LV44004-50JI Datasheet

IS41C4400X

IS41LV4400X SERIES ISSI

4M x 4 (16-MBIT) DYNAMIC RAM

®

WITH EDO PAGE MODE

FEATURES

•

Extended Data-Out (EDO) Page Mode access cycle

• TTL compatible inputs and outputs

• Refresh Interval:

– 2,048 cycles/32 ms
– 4,096 cycles/64 ms

• Refresh Mode: RAS-Only,

CAS-before-RAS (CBR), and Hidden

• Single power supply:

– 5V±10% or 3.3V ± 10%

• Byte Write and Byte Read operation via two CAS

• Industrial temperature range -40°C to 85°C

PRODUCT SERIES OVERVIEW

Part No. Refresh Voltage

IS41C44002 2K 5V ± 10%

IS41C44004 4K 5V ± 10%

IS41LV44002 2K 3.3V ± 10%

IS41LV44004 4K 3.3V ± 10%

JUNE, 2001

DESCRIPTION

The

ISSI

4400 Series is a 4,194,304 x 4-bit high-performance
CMOS Dynamic Random Access Memory. These
devices offer an accelerated cycle access called EDO
Page Mode. EDO Page Mode allows 2,048 or 4096
random accesses within a single row with access cycle
time as short as 20 ns per 4-bit word.

These features make the 4400 Series ideally suited for
high-bandwidth graphics, digital signal processing,
high-performance computing systems, and peripheral
applications.

The 4400 Series is packaged in a 24-pin 300-mil SOJ with
JEDEC standard pinouts.

KEY TIMING PARAMETERS

Parameter -50 -60 Unit

RAS Access Time (tRAC)5060ns
CAS Access Time (tCAC)1315ns

Column Address Access Time (tAA)25 30 ns
EDO Page Mode Cycle Time (tPC)20 25 ns
Read/Write Cycle Time (tRC) 84 104 ns

PIN CONFIGURATION

24 Pin SOJ

24

23

22

21

20

19

18

17

16

15

14

13

GND

I/O3

I/O2

CAS

OE

A9

A8

A7

A6

A5

A4

GND

1

VCC

2

I/O0

3

I/O1

4

WE

5

RAS

A10

A0

A1

A2

A3

VCC

6

7

8

9

10

11

12

*A11(NC)

* A11 is NC for 2K Refresh devices.

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. D

06/24/01

PIN DESCRIPTIONS

A0-A11 Address Inputs (4K Refresh)

A0-A10 Address Inputs (2K Refresh)

I/O0-3 Data Inputs/Outputs

WE Write Enable
OE Output Enable
RAS Row Address Strobe
CAS Column Address Strobe

Vcc Power

GND Ground

NC No Connection

1

IS41C4400X

IS41LV4400X S ERIES ISSI

FUNCTIONAL BLOCK DIAGRAM

OE

WE

®

CAS

RAS

A0-A10(A11)

CAS

CONTROL

LOGIC

RAS

CLOCK

GENERATOR

REFRESH
COUNTER

ADDRESS

BUFFERS

WE

CAS WE

RAS

CONTROL

LOGICS

DATA I/O BUS

COLUMN DECODERS

SENSE AMPLIFIERS

MEMORY ARRAY

4,194,304 x 4

ROW DECODER

OE

CONTROL

LOGIC

OE

I/O0-I/O3

DATA I/O BUFFERS

TRUTH TABLE

Function RAS CAS WE OE Address tR/tC I/O

Standby H H X X X High-Z
Read L L H L ROW/COL DOUT
Write: Word (Early Write) L L L X ROW/COL DIN
Read-Write L L H→LL→H ROW/COL DOUT, DIN
EDO Page-Mode Read 1st Cycle: L H→L H L ROW/COL DOUT

2nd Cycle: L H→L H L NA/COL DOUT

EDO Page-Mode Write 1st Cycle: L H→L L X ROW/COL DIN

2nd Cycle: L H→L L X NA/COL DIN

EDO Page-Mode 1st Cycle: L H→LH→LL→H ROW/COL DOUT, DIN
Read-Write 2nd Cycle: L H→LH→LL→H NA/COL DOUT, DIN

Hidden Refresh Read L→ H→L L H L ROW/COL DOUT

RAS-Only Refresh L H X X ROW/NA High-Z
CBR Refresh H→L L X X X High-Z

Note:

1. EARLY WRITE only.

2

Write

(1)

L→H→L L L X ROW/COL DOUT

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. D

06/24/01

IS41C4400X

IS41LV4400X S ERIES ISSI

®

Functional Description

The IS41C4400x and IS41LV4400x are CMOS
DRAMs optimized for high-speed bandwidth, low
power applications. During READ or WRITE cycles, each
bit is uniquely addressed through the 11 or 12 address
bits. These are entered 11 bits (A0-A10) at a time for the
2K refresh device or 12 bits (A0-A11) at a time for the 4K
refresh device. The row address is latched by the Row
Address Strobe (RAS). The column address is latched by
the Column Address Strobe (CAS). RAS is used to latch
the first nine bits and CAS is used the latter ten bits.

Memory Cycle

A memory cycle is initiated by bring RAS LOW and it is
terminated by returning both RAS and CAS HIGH. To
ensures proper device operation and data integrity any
memory cycle, once initiated, must not be ended or
aborted before the minimum tRAS time has expired. A new
cycle must not be initiated until the minimum precharge
time tRP, tCP has elapsed.

Read Cycle

A read cycle is initiated by the falling edge of CAS or OE,
whichever occurs last, while holding WE HIGH. The
column address must be held for a minimum time
specified by tAR. Data Out becomes valid only when tRAC,
tAA, tCAC and tOEA are all satisfied. As a result, the access
time is dependent on the timing relationships between
these parameters.

Auto Refresh Cycle

To retain data, 2,048 refresh cycles are required in each
32 ms period, or 4,096 refresh cycles are required in
each 64ms period. There are two ways to refresh the
memory:

1. By clocking each of the 2,048 row addresses (A0
through A10) or 4096 row addresses (A0 through
A11) with RAS at least once every 32 ms or 64ms
respectively. Any read, write, read-modify-write or
RAS-only cycle refreshes the addressed row.

2. Using a CAS-before-RAS refresh cycle. CAS-before-RAS
refresh is activated by the falling edge of RAS, while
holding CAS LOW. In CAS-before-RAS refresh cycle,
an internal 9-bit counter provides the row addresses
and the external address inputs are ignored.

CAS-before-RAS is a refresh-only mode and no data
access or device selection is allowed. Thus, the output
remains in the High-Z state during the cycle.

Power-On

After application of the VCC supply, an initial pause of 200
µs is required followed by a minimum of eight initialization
cycles (any combination of cycles containing a RAS
signal).

During power-on, it is recommended that RAS track with
VCC or be held at a valid VIH to avoid current surges.

Write Cycle

A write cycle is initiated by the falling edge of CAS and
WE, whichever occurs last. The input data must be valid

at or before the falling edge of CAS or WE, whichever
occurs last.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. D

06/24/01

3

IS41C4400X

IS41LV4400X S ERIES ISSI

®

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol Parameters Rating Unit

VT Voltage on Any Pin Relative to GND 5V –1.0 to +7.0 V

3.3V –0.5 to +4.6

CC Supply Voltage 5V –1.0 to +7.0 V

V

3.3V –0.5 to +4.6

IOUT Output Current 50 mA

PD Power Dissipation 1 W

A Commercial Operation Temperature 0 to +70 °C

T

Industrial Operation Temperature -40 to +85

TSTG Storage Temperature –55 to +125 °C

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.

RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)

Symbol Parameter Min. Typ. Max. Unit

VCC Supply Voltage 5V 4.5 5.0 5.5 V

3.3V 3.0 3.3 3.6

VIH Input High Voltage 5V 2.4 — VCC + 1.0 V

3.3V 2.0 — VCC + 0.3

VIL Input Low Voltage 5V –1.0 — 0.8 V

3.3V –0.3 — 0.8

TA Commercial Ambient Temperature 0 — 70 °C

Industrial Ambient Temperature -40 — 85 °C

CAPACITANCE

Symbol Parameter Max. Unit

CIN1 Input Capacitance: A0-A10(A11) 5 pF
CIN2 Input Capacitance: RAS, CAS, WE, OE 7pF

CIO Data Input/Output Capacitance: I/O0-I/O3 7 pF

Notes:

1. Tested initially and after any design or process changes that may affect these parameters.

2. Test conditions: T

(1,2)

A = 25°C, f = 1 MHz.

4

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. D

06/24/01

IS41C4400X

IS41LV4400X S ERIES ISSI

®

ELECTRICAL CHARACTERISTICS

(1)

(Recommended Operating Conditions unless otherwise noted.)

Symbol Parameter Test Condition VCC Speed Min. Max. Unit

IIL Input Leakage Current Any input 0V ≤ VIN ≤ Vcc –55µA

Other inputs not under test = 0V

IIO Output Leakage Current Output is disabled (Hi-Z) –55µA

0V ≤ VOUT ≤ Vcc

VOH

Output High Voltage Level

IOH = –5.0 mA, Vcc = 5V 2.4 — V
IOH = –2.0 mA, Vcc = 3.3V

VOL

Output Low Voltage Level

IOL = 4.2 mA, Vcc = 5V — 0.4 V
IOL = 2 mA, Vcc = 3.3V

ICC1 Standby Current: TTL RAS, CAS ≥ VIH

Commercial

5V — 2mA

3.3V — 0.5

Industrial

5V — 3

3.3V — 2

ICC2

Standby Current: CMOS

RAS, CAS ≥ VCC – 0.2V 5V — 1mA

3.3V — 0.5

ICC3 Operating Current: RAS, CAS, -50 — 120 mA

Random Read/Write

(2,3,4)

Address Cycling, tRC = tRC (min.)

-60 — 110

Average Power Supply Current

ICC4 Operating Current: RAS = VIL, CAS, -50 — 90 mA

EDO Page Mode

(2,3,4)

Cycling tPC = tPC (min.) -60 — 80

Average Power Supply Current

ICC5 Refresh Current: RAS Cycling, CAS ≥ VIH -50 — 120 mA

RAS-Only

(2,3)

tRC = tRC (min.) -60 — 110

Average Power Supply Current

ICC6 Refresh Current: RAS, CAS Cycling -50 — 120 mA

(2,3,5)

CBR

tRC = tRC (min.) -60 — 110

Average Power Supply Current

Notes:

1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycles (RAS-Only or CBR) before proper device
operation is assured. The eight RAS cycles wake-up should be repeated any time the t

2. Dependent on cycle rates.

3. Specified values are obtained with minimum cycle time and the output open.

4. Column-address is changed once each EDO page cycle.

5. Enables on-chip refresh and address counters.

REF refresh requirement is exceeded.

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. D

06/24/01

5

IS41C4400X

IS41LV4400X S ERIES ISSI

®

AC CHARACTERISTICS

(1,2,3,4,5,6)

(Recommended Operating Conditions unless otherwise noted.)

-50 -60

Symbol Parameter Min. Max. Min. Max. Units

tRC Random READ or WRITE Cycle Time 84 — 104 — ns
tRAC Access Time from RAS
tCAC Access Time from CAS

tAA Access Time from Column-Address

(6, 7)

(6, 8, 15)

— 50 — 60 ns

— 13 — 15 ns

(6)

— 25 — 30 ns

tRAS RAS Pulse Width 50 10K 60 10K ns
tRP RAS Precharge Time 30 — 40 — ns

(21)

(23)

8 10K 10 10K ns

(9)

9 — 9 — ns

38 — 40 — ns

(10, 20)

12 37 14 45 ns

tCAS CAS Pulse Width
tCP CAS Precharge Time
tCSH CAS Hold Time
tRCD RAS to CAS Delay Time

tASR Row-Address Setup Time 0 — 0 — ns

tRAH Row-Address Hold Time 8 — 10 — ns

(20)

(20)

0 — 0 — ns

8 — 10 — ns

tASC Column-Address Setup Time

tCAH Column-Address Hold Time

tAR Column-Address Hold Time 30 — 40 — ns

(referenced to RAS)

tRAD RAS to Column-Address Delay Time

(11)

10 25 12 30 ns

tRAL Column-Address to RAS Lead Time 25 — 30 — ns
tRPC RAS to CAS Precharge Time 5 — 5 — ns
tRSH RAS Hold Time 8 — 10 — ns
tRHCP RAS Hold Time from CAS Precharge 30 — 35 — ns

(19, 24)

(15, 16)

(15, 24)

(21)

0 — 0 — ns

5 — 5 — ns

315 315 ns

— 12 — 15 ns

tCLZ CAS to Output in Low-Z
tCRP CAS to RAS Precharge Time

tOD Output Disable Time

tOE Output Enable Time

tOED Output Enable Data Delay (Write) 12 — 15 — ns
tOEHC OE HIGH Hold Time from CAS HIGH 5 — 5 — ns
tOEP OE HIGH Pulse Width 10 — 10 — ns
tOES OE LOW to CAS HIGH Setup Time 5 — 5 — ns

tRCS Read Command Setup Time

(17, 20)

0 — 0 — ns

tRRH Read Command Hold Time 0 — 0 — ns

(referenced to RAS)

(12)

tRCH Read Command Hold Time 0 — 0 — ns

(referenced to CAS)

tWCH Write Command Hold Time

(12, 17, 21)

(17)

8 — 10 — ns

tWCR Write Command Hold Time 40 — 50 — ns

(referenced to RAS)

tWP Write Command Pulse Width

(17)

(17)

8 — 10 — ns

tWPZ WE Pulse Widths to Disable Outputs 7 — 7 — ns

6

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. D

06/24/01