ISOCOM MOC8100 Datasheet

7/12/00

MOC8100

OPTICALLY COUPLED

ISOLATOR

PHOTOTRANSISTOR OUTPUT

APPROVALS

l UL recognised, File No. E91231

'X' SPECIFICATION APPROVALS

ll VDE 0884 approval pending

l EN60950 approval pending

DESCRIPTION

The MOC8100 optically coupled isolator
consists of infrared light emitting diode and
NPN silicon photo transistor in a standard 6 pin
dual in line plastic package.

FEATURES

l Options :-

10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.

l High Isolation Voltage (5.3kV

l Low Input Current 1mA I

l High Current Transfer Ratio (50% min)

l All electrical parameters 100% tested

l Custom electrical selections available

,7.5kV

RMS

F

PK

APPLICATIONS

l DC motor controllers

l Industrial systems controllers

l Measuring instruments

l Signal transmission between systems of

different potentials and impedances

OPTION SM

SURFACE MOUNT

OPTION G

7.62

2.54

7.0

6.0

Dimensions in mm

1
2 5

3 4

1.2

7.62

6.62

4.0

3.0

0.5

3.0

0.5

3.35

ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)

Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature

)

(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

Forward Current 60mA
Reverse Voltage 6V
Power Dissipation 105mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BV
Collector-base Voltage BV
Emitter-base Voltage BV
Power Dissipation 160mW

CEO

CBO

EBO

POWER DISSIPATION

6

7.62

13°
Max

0.26

30V
70V
6V

0.6

0.1

10.46

9.86

1.25

0.75

0.26

10.16

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, Cleveland, TS25 1YD

Tel: [phone] Fax :[phone]

Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)

ISOCOM INC

1024 S. Greenville Ave, Suite 240,

Allen, TX 75002 USA

Tel: [phone] Fax: [phone]

e-mail [e-mail]

http://www.isocom.com

DB92198m-AAS/A1

7/12/00

ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )

PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.2 1.4 V IF = 10mA

Reverse Voltage (VR) 6 V IR = 10µA
Reverse Current (IR) 10 µA VR = 6V

Output Collector-emitter Breakdown (BV

Collector-base Breakdown (BV
Emitter-base Breakdown (BV
Collector-emitter Dark Current (I
Collector-base Dark Current (I

) 30 V IC = 1mA ( note 2 )

CEO

) 70 V IC = 100µA

CBO

) 6 V IE = 100µA

EBO

) 25 nA VCE = 5V

CEO

) 10 nA VCE = 5V

CBO

Coupled Output Collector Current ( IC ) 0.5 mA 1mA IF , 5V V

0.3 mA 1mA IF , 5V V
( TA = 0 to + 70°C )

Collector-emitter Saturation VoltageV

Input to Output Isolation Voltage V

Input-output Isolation Resistance R

CE(SAT)

5300 V

ISO

7500 V

10

5x10

ISO

0.5 V 1mA I

RMS
PK

Ω V

See note 1
See note 1

= 500V (note 1)

IO

, 100µA I

F

Turn-on Time ton 20 µs VCC = 10V , IC= 2mA
Turn-off Time toff 20 µs RL = 100Ω , fig 1
Output Rise Time tr 4 µs VCC = 10V , IC= 2mA
Output Fall Time tf 6 µs RL = 100Ω , fig 1

Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.

CE
CE

C

RL = 100Ω

V

CC

Input

Output

Output

10%

90%

t

on

t

r

FIG 1

t

off

t

f

10%

90%

DB92198m-AAS/A1