ISOCOM MCT66, MCT6, MCT62, MCT61 Datasheet

7/12/00

MCT6, MCT61, MCT62, MCT66

HIGH DENSITY

PHOTOTRANSISTOR OPTICALLY

COUPLED ISOLATORS

APPROVALS

ll UL recognised, File No. E91231

'X' SPECIFICATION APPROVALS

l MCT6 -

VDE 0884 in 3 available lead form : -

- STD

- G form

- SMD approved to CECC 00802

MCT61, MCT62, MCT66 -

VDE 0884 approval pending

ll EN60950 approval pending

DESCRIPTION

The MCT6, MCT61, MCT62 & MCT66 series
of optically coupled isolators consist of infrared
light emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages mounted two channels per unit.

FEATURES

l Options :-

10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.

l High Isolation Voltage (5.3kV

RMS

,7.5kV

PK

APPLICATIONS

l Computer terminals

l Industrial systems controllers

l Measuring instruments

l Signal transmission between systems of

different potentials and impedances

Dimensions in mm

1
2 7
3
4 5

7.62

0.26

1.2

3.0

10.16

9.16

2.54

0.5

7.0

6.0

4.0

3.0

0.5

3.35

ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)

Storage Temperature -55°C to + 125°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

)

Forward Current 50mA
Reverse Voltage 6V
Power Dissipation 70mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BV
Emitter-collector Voltage BV
Power Dissipation 150mW

CEO
ECO

8

6

13°
Max

30V
6V

OPTION SM

SURFACE MOUNT

0.6

0.1

10.46

9.86

1.25

0.75

OPTION G

7.62

0.26

10.16

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, Cleveland, TS25 1YD

Tel: [phone] Fax :[phone]

POWER DISSIPATION

Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)

ISOCOM INC

1024 S. Greenville Ave, Suite 240,

Allen, TX 75002 USA

Tel: [phone] Fax: [phone]

e-mail [e-mail]

http://www.isocom.com

DB92012m-AAS/A1

7/12/00

ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )

PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.50 V IF = 20mA

Reverse Voltage (VR) 3 V IR = 10µA
Reverse Current (IR) 10 µA VR = 3V

Output Collector-emitter Breakdown (BV

Emitter-collector Breakdown (BV
Collector-emitter Dark Current (I

) 30 V IC = 1mA (note 2)

CEO

) 6 V IE = 100µA

ECO

) 100 nA VCE = 10V

CEO

Coupled Current Transfer Ratio (CTR) (Note 2)

MCT6 20 % 10mA IF , 10V V
MCT61 50 % 5mA IF , 5V V

MCT62 100 % 5mA IF , 5V V
MCT66 6 % 10mA IF , 10V V

Collector-emitter Saturation Voltage V

CESAT

MCT6,61,62 0.4 V 16mA IF , 2mA I

MCT66 0.4 V 40mA IF , 2mA I
Input to Output Isolation Voltage V
Input to Output Isolation Voltage V
Input-output Isolation Resistance R

5300 V

ISO

7500 V

ISO

ISO

5x10

10

RMS
PK

Ω V

Output Rise Time, Fall Time tr , tf 2.4 µs IC = 2mA, V
Output Rise Time, Fall Time tr , tf 15 µs IC = 2mA, V

Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.

CE

CE
CE

CE

C
C

See note 1
See note 1

= 500V (note 1)

IO

= 10V,

CC

RL = 100Ω (Fig. 1)

= 10V,

CC

RL = 1kΩ (Fig. 2)

VCC = 10V

FIG 1

OUTPUT

VCC = 10V

FIG 2

RL = 1kΩRL = 100Ω

OUTPUT

INPUT

OUTPUT

10%

90%

t

on

t

r

t

off

t

f

10%

90%

DB92012m-AAS/A1