ISOCOM ISTS822SS, ISTS822SD, ISTS822S, ISTS250, ISTS832SS Datasheet

ISOCOM COMPONENTS LTD

Unit 25B, Park View Road West,

Park View Industrial Estate, Brenda Road

Hartlepool, Cleveland, TS25 1YD

Tel: [phone] Fax :[phone]

ISOCOM INC

720 E., Park Boulevard, Suite 104,

Plano, TX 75074 USA

Tel: [phone]

Fax: [phone]

24/9/97

DB92003-AAS/A1

TRANSMISSIVE OPTO-ELECTRONIC DUAL

CHANNEL SLOTTED INTERRUPTER

SWITCHES WITH TRANSISTOR SENSORS

ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)

Storage Temperature -40°C to + 85°C
Operating Temperature -25°C to + 85°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C

INPUT DIODE

Forward Current 50mA
Reverse Voltage 5V
Power Dissipation 75mW

OUTPUT TRANSISTOR

Collector-emitter Voltage BV

CEO

30V

Emitter-collector Voltage BV

ECO

5V

Collector Current I

C

20mA

Power Dissipation 75mW

ISTS150, ISTS832S, ISTS832SD
ISTS250, ISTS822S, ISTS822SD

3.2
DIA 2
PLCS

ISTS250
ISTS822S
ISTS822SD

2.8

OPTICAL
CENTRE
LINE

2.54

0.45

0.40

7.62

E

DESCRIPTION

This series of photointerrupters are dual
channel switches consisting of two Gallium
Arsenide infrared emitting diodes and two NPN
silicon photo transistors mounted in a "side by
side" configuration on opposite sides of a 2.5mm
wide slot. Dual channels enable direction of
travel sensing. The transmissive housing reduces
possible interference from ambient light and
provides dust and dirt protection. In addition the
ISTS822S, ISTS832S have 0.25mm apertures in
front of the phototransistors, While the
ISTS822SD, ISTS832SD have the same sized
apertures in front of both emitters and
phototransistors

FEATURES

l Single or Double apertures for High Resolution

l 2.5mm Gap between LED and Detector

l Dual channels "side by side"

APPLICAT IO NS

l Copiers, Printers, Facsimilies, Record

Players, Cassette Decks, VCR's

ISTS150
ISTS832S
ISTS832SD

OPTICAL
CENTRE
LINE

1

Dimensions in mm

10.4

10.0

11.4

2.54

7.9

7.4

7.62

2.54 2.8

2.8

11.5

E

2.8

0.45

0.40

11.4

7.9

7.4

17.8

11.5

5.4

10.4

10.0

2.54

24.2

1

2
3

4

8

7
6

5

DB92003-AAS/A1

PARAMETER MIN TYP MAX UNITS TEST CONDITION

Input Forward Voltage (VF) 1.2 1.6 V IF = 20mA

Reverse Voltage (VR)3VI

R

= 10µA

Reverse Current (IR)10µAV

R

= 3V

Output Collector-emitter Breakdown (BV

CEO

)30 V IC = 1mA

( Note 1 )

Emitter-collector Breakdown (BV

ECO

) 5 V IE = 100µA

Collector-emitter Dark Current (I

CEO

) 100 nA VCE = 10V

Coupled On-State Collector Current IC (

ON

)

( Note 1 )

ISTS150, ISTS250 250 µA 20mA I

F

, 10V V

CE

( no apertures )
ISTS822S, ISTS832S 250 µA 20mA IF , 10V V

CE

(0.25mm apertures phototransistors only)
ISTS822SD, ISTS832SD 100 µA 20mA I

F

, 10V V

CE

( 0.25mm apertures in front of both -

- emitters and phototransistors )

Collector-emitter Saturation VoltageV

CE(SAT)

ISTS150, ISTS250 0.4 V 20mA I

F

, 125µA I

C

ISTS822S, ISTS832S 0.4 V 20mA I

F

, 125µA I

C

ISTS822SD, ISTS832SD 0.4 V 20mA I

F

, 50µA I

C

Rise Time tr 6 µsV

CC

= 5V,

Fall Time tf 6 µsI

F

= 20mA, RL= 100Ω

Note 1 Special Selections are available on request. Please consult the factory.

24/9/97

ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )