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ISTS100
ISTS200
1mm APERTURE OPTO-ELECTRONIC SINGLE
CHANNEL SLOTTED INTERRUPTER
SWITCHES WITH TRANSISTOR SENSORS
1
2
9.0
8.0
ISTS200
25.7
24.1
E
12.7
19.05
4
3
3.0
11.1
10.5
0.45
0.40
7.62
3.3
DIA 2
PLCS
6.6
3.3
3.0
2.8
3.3
3.0
OPTICAL
CENTRE
LINE
2.54
1
2
DESCRIPTION
The ISTS100, ISTS200 opaque
photointerrupters are single channel switches
consisting of a Gallium Arsenide infrared
emitting diode and a NPN silicon photo transistor
mounted in a polycarbonate housing. The
package is designed to optimise the mechanical
resolution, coupling efficiency, ambient light
rejection, cost and reliability. Operating on the
principle that objects opaque to infrared will
interrupt the transmission of light between an
infrared emitting diode and a photo sensor
switching the output from an "ON" state to an
"OFF" state.
Dimensions in mm
9.0
8.0
1
2
E
12.7
7.62
3.0
4
3
4
3
11.1
10.5
0.45
0.40
6.6
3.3
3.0
2.8
OPTICAL
CENTRE
LINE
2.54
ISTS100
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -40°C to + 85°C
Operating Temperature -25°C to + 85°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 5V
Power Dissipation 75mW
FEATURES
l High Gain
l 3mm Gap between LED and Detector
l Polycarbonate case protected against
ambient light
APPLICAT IONS
l Copiers, Printers, Facsimilies, Record
Players, Casette Decks, Optoelectronic
Switches
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
24/9/97
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
Emitter-collector Voltage BV
Collector Current I
Power Dissipation 75mW
C
CEO
ECO
30V
5V
20mA
ISOCOM INC
720 E., Park Boulevard, Suite 104,
Plano, TX 75074 USA
Tel: (972) 423-5521
Fax: (972) 422-4549
DB92182-AAS/A2
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ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.7 V IF = 50mA
Reverse Voltage (VR)5VI
Reverse Current (IR) 100 µAV
= 100µA
R
= 5V
R
Output Collector-emitter Breakdown (BV
( Note 1 )
Emitter-collector Breakdown (BV
Collector-emitter Dark Current (I
Coupled On-State Collector Current IC (
)30 V IC = 1mA
CEO
) 5 V IE = 100µA
ECO
) 100 nA VCE = 10V
CEO
) 1.9 mA 30mA IF , 5V V
ON
( Note 1 )
Collector-emitter Saturation VoltageV
CE(SAT)
0.4 V 30mA I
Turn-on Time ton 8 µsV
Turn-off Time toff 50 µsI
Note 1 Special Selections are available on request. Please consult the factory.
CE
, 1.8mA I
F
= 5V ,
CC
= 30mA,RL= 2.5kΩ
F
C
24/9/97
DB92182-AAS/A2