ISOCOM ISP827, ISP817, ISP847 Datasheet
26/7/99
ISP817X, ISP827X, ISP847X
ISP817, ISP827, ISP847
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
l UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
l VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
l Certified to EN60950 by the following
Test Bodies :Nemko - Certificate No. P96102022
Fimko - Registration No. 192313-01..25
Semko - Reference No. 9639052 01
Demko - Reference No. 305969
DESCRIPTION
The ISP817, ISP827, ISP847 series of optically
coupled isolators consist of infrared light
emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages.
FEATURES
l Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l High Current Transfer Ratio (50% min)
l High Isolation Voltage (5.3kV
l High BV
l All electrical parameters 100% tested
l Custom electrical selections available
( 35Vmin )
CEO
RMS
,7.5kV
APPLICATIONS
l Computer terminals
l Industrial systems controllers
l Measuring instruments
l Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
1.2
0.6
10.2
9.5
1.4
0.9
OPTION G
7.62
0.26
10.16
PK
)
ISP817X
ISP817
ISP827X
ISP827
1.2
3.0
ISP847X
ISP847
1.2
3.0
2.54
1.2
3.0
10.16
9.16
20.32
19.32
5.08
4.08
0.5
2.54
0.5
2.54
3.35
3.35
0.5
7.0
6.0
4.0
3.0
7.0
6.0
4.0
3.0
0.5
0.5
3.35
Dimensions in mm
1
2
7.62
0.26
1 8
2
3
4
7.62
0.26
1
2
3
4
5 12
6 11
7.0
6.0
7
8
4.0
3.0
0.5
0.26
4
3
13°
Max
7
6
5
13°
Max
16
15
14
13
10
9
7.62
13°
Max
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail sales@isocom.co.uk
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
http://www.isocom.com
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB92275A-AAS/A2
26/7/99
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 125°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
Emitter-collector Voltage BV
Power Dissipation 150mW
CEO
ECO
35V
6V
POWER DISSIPATION
Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.2 1.4 V IF = 20mA
Reverse Voltage (VR) 6 V IR = 10µA
Reverse Current (IR) 10 µA VR = 6V
Output Collector-emitter Breakdown (BV
( Note 2 )
Emitter-collector Breakdown (BV
Collector-emitter Dark Current (I
) 35 V IC = 1mA
CEO
) 6 V IE = 100µA
ECO
) 100 nA VCE = 20V
CEO
Coupled Current Transfer Ratio (CTR) (Note 2)
ISP817, ISP827, ISP847 50 600 % 5mA IF , 5V V
ISP817A,ISP827A,ISP847A 80 160 % 5mA I
ISP817B,ISP827B,ISP847B 130 260 % 5mA I
ISP817C,ISP827C,ISP847C 200 400 % 5mA I
ISP817D,ISP827D,ISP847D 300 600 % 5mA I
ISP817GB, ISP827GB, ISP847GB 100 600 % 5mA IF , 5V V
ISP817BL, ISP827BL, ISP847BL 200 600 % 5mA IF , 5VV
, 5V V
F
, 5V V
F
, 5V V
F
, 5V V
F
CE
CE
CE
CE
CE
CE
CE
Collector-emitter Saturation VoltageVCE
Input to Output Isolation Voltage V
Input-output Isolation Resistance R
(SAT)
5300 V
ISO
7500 V
ISO
5x10
10
0.2 V 20mA IF , 1mA I
RMS
PK
Ω V
Output Rise Time tr 4 18 µs VCE = 2V ,
Output Fall Time tf 3 18 µs IC = 2mA, RL = 100Ω
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
See note 1
See note 1
= 500V (note 1)
IO
C
DB92275A-AAS/A2
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