ISOCOM ISP621-4, ISP621-1 Datasheet
7/12/00
ISP621-1X, ISP621-2X, ISP621-4X
ISP621-1, ISP621-2, ISP621-4
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
l UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
l VDE 0884 in 3 available lead form : -
-STD
- G form
- SMD approved to CECC 00802
ll Certified to EN60950 by the following
Test Bodies :Nemko - Certificate No. P96102022
Fimko - Registration No. 192313-01..25
Semko - Reference No. 9639052 01
Demko - Reference No. 305969
DESCRIPTION
The ISP621-1 , ISP621-2 , ISP621-4 series of
optically coupled isolators consist of infrared
light emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages.
FEATURES
l Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l High Current Transfer Ratio ( 50% min)
l High Isolation Voltage (5.3kV
l High BV
l All electrical parameters 100% tested
l Custom electrical selections available
( 55Vmin )
CEO
RMS
,7.5kV
PK
APPLICATIONS
l Computer terminals
l Industrial systems controllers
l Measuring instruments
l Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
0.6
0.1
10.46
9.86
1.25
0.75
OPTION G
7.62
0.26
10.16
ISP621-1X
ISP621-1
ISP621-2X
ISP621-2
)
ISP621-4X
ISP621-4
3.0
1.2
3.0
1.2
2.54
1.2
3.0
10.16
9.16
20.32
19.32
5.08
4.08
0.5
2.54
0.5
2.54
3.35
3.35
0.5
7.0
6.0
4.0
3.0
7.0
6.0
4.0
3.0
0.5
0.5
3.35
Dimensions in mm
1
2
7.62
0.26
1 8
2
3
4
7.62
0.26
1
2
3
4
5 12
6 11
7.0
6.0
7
8
4.0
3.0
0.5
0.26
4
3
13°
Max
7
6
5
13°
Max
16
15
14
13
10
9
7.62
13°
Max
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
DB92356m-AAS/A3
7/12/00
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 125°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 5V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
Emitter-collector Voltage BV
Power Dissipation 150mW
CEO
ECO
55V
6V
POWER DISSIPATION
Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF) 1.0 1.15 1.3 V IF = 10mA
Reverse Voltage (VR) 5 V IR = 10µA
Reverse Current (IR) 10 µA VR = 5V
Output Collector-emitter Breakdown (BV
( Note 2 )
Emitter-collector Breakdown (BV
Collector-emitter Dark Current (I
) 55 V IC = 0.5mA
CEO
) 6 V IE = 100µA
ECO
) 100 nA VCE = 24V
CEO
Coupled Current Transfer Ratio (CTR) (Note 2)
ISP621-1, ISP621-2, ISP621-4 50 600 % 5mA IF , 5V V
CTR selection available GB 100 600 %
BL 200 600 %
GB 30 % 1mA IF , 0.4V V
CE
CE
Collector-emitter Saturation VoltageVCE
(SAT)
0.4 V 8mA IF , 2.4mA I
GB 0.4 V 1mA IF , 0.2mA I
Input to Output Isolation Voltage V
Input-output Isolation Resistance R
5300 V
ISO
7500 V
10
5x10
ISO
RMS
PK
Ω V
Rise Time tr 2 µs VCC =10V ,
Fall Time tf 3 µs IC = 2mA, RL = 100Ω
Turn-on Time ton 3 µs
Turn-off Time toff 3 µs
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
See note 1
See note 1
= 500V (note 1)
IO
C
C
DB92356m-AAS/A3
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